Umicore Ag & Co Kg

Philipps-Universitaet Marburg

Joerg Sundermeyer

Ralf Karch

Angelino Doppiu

Eileen Woerner

Annika Frey

Wolf Schorn

Andreas Rivas-Nass

Nicholas Rau

Andreas Rivas Nass

Henrik Schumann

Ruben Ramon Mueller

Andreas Rivas-nass

Susanne Pulz

Fabian Schroeder

Lisa Hamel

Katrin Schlechter

David Grosse-Hagenbrock

Fuming Mei

Eileen Wörner

Susanne Herritsch

Fabian SCHRÖDER

The invention relates to the use of a metal complex, which has at least one ligand of the formula R—N—R, wherein Rand Rare hydrocarbon moieties, for depositing the metal or a compound of the metal from the gas phase. The invention further relates to methods for depositing metals from the metal complexes, and to metal complexes, substituted triazene compounds and to methods for the production thereof.

Metal complexes having triazenido ligands and uses thereof for depositing metals from the gas phase

The invention relates to the synthesis and provision of a new class of volatile metal organic compounds based on bis(alkylimine)glyoxal and bis(dialkylhydrazone)glyoxal ligands in combination with cyclopentadienide and alkyl ligands for use in ALD and CVD processes.

Metal organic compounds

Metal complexes of formula (I) are described:[M(L)(L)(hydra)]  formula (I)

Metal complexes for gas-phase thin-film deposition

The invention relates to a method for producing a compound of formula MXfrom a precursor compound of formula MX, where M is a metal, X is a halide selected from F, Cl, Br, J, m is a number selected from the range 2 to 8, and n is a number selected from the range 1 to 7, with the condition that n&#x3c;m, comprising a method step in which the precursor compound is reduced with a silane compound to the compound of formula MX.

Method for the reduction of metal halides

The invention relates to lithium alkyl aluminates according to the general formula Li[AlR] and to a method for preparing same, starting from LiAlHand RLi in an aprotic solvent. The invention also relates to compounds according to the general formula Li[AlR] which can be obtained using the claimed method, and to the use thereof. The invention also relates to the use of a lithium alkyl aluminate Li[AlR] as a transfer reagent for transferring at least one radical R to an element halide or metal halide and to a method for transferring at least one radical R to a compound E(X)for preparing a compound according to the general formula E(X)R, where E=aluminium, gallium, indium, thallium, germanium, tin, lead, antimony, bismuth, zinc, cadmium, mercury, or phosphorus, X=halogen, q=2, 3 or 4, and p=1, 2, 3 or 4. The invention also relates to compounds which can be obtained using such a method, to the use thereof, and to a substrate which has an aluminium layer or a layer containing aluminium on one surface.

Lithium alkyl aluminates as alkyl transfer reagents

The invention relates to a method for the cost-effective and environmentally friendly production of alkyl indium sesquichloride in high yield and with high selectivity and purity. The alkyl indium sesquichloride produced according to the invention is particularly suitable, also as a result of the high purity and yield, for the production, on demand, of indium-containing precursors in high yield and with high selectivity and purity. As a result of the high purity, the indium-containing precursors that can be produced are particularly suitable for metal organic chemical vapour deposition (MOCVD) or metal organic vapour phase epitaxy (MOVPE). The novel method according to the invention is characterised by the improved execution of the method, in particular a rapid process control. Owing to targeted and extensive use of raw materials that are cost-effective and have a low environmental impact, the method is also suitable for use on an industrial scale.

Method for producing alkyl-indium compounds and the use thereof

The invention relates to a method for the cost-effective and environmentally friendly production of alkyl indium sesquichloride in high yield and with high selectivity and purity. The alkyl indium sesquichloride produced according to the invention is particularly suitable, also as a result of the high purity and yield, for the production, on demand, of indium-containing precursors in high yield and with high selectivity and purity. As a result of the high purity, the indium-containing precursors that can be produced are particularly suitable for metal organic chemical vapor deposition (MOCVD) or metal organic vapor phase epitaxy (MOVPE). The novel method according to the invention is characterized by the improved execution of the method, in particular a rapid process control. Owing to targeted and extensive use of raw materials that are cost-effective and have a low environmental impact, the method is also suitable for use on an industrial scale.

The present patent application relates to new metal complexes having at least one N-aminoguanidinate ligand. The patent application further relates to the preparation of the new metal complexes and also to their use. The new metal complexes are especially suitable as precursors for the preparation of functional layers by means of gas-phase thin-film processes such as CVD, MO-CVD, MOVPE and ALD. Additionally, they are also suitable as catalysts for olefin hydroamination and for olefin polymerization. 

Metal N-aminoguanidinate complexes for use in thin film fabrication and catalysis

The invention relates to a method for the cost-effective and environmentally friendly production of dialkyl indium chloride in high yield and with high selectivity and purity. The dialkyl indium chloride produced according to the invention is particularly suitable, also as a result of the high purity and yield, for the production, on demand, of indium-containing precursors in high yield and with high selectivity and purity. As a result of the high purity, the indium-containing precursors that can be produced are particularly suitable for metal organic chemical vapor deposition (MOCVD) or metal organic vapor phase epitaxy (MOVPE). The novel method according to the invention is characterized by the improved execution of the method, in particular a rapid process control. Owing to targeted and extensive use of raw materials that are cost-effective and have a low environmental impact, the method is also suitable for use on an industrial scale.

The invention relates to new metal complexes having N-aminoamidinate ligands, more particularly metal complexes having N,N'-bis(dimethylamino)acetamidinate, N,N&#x2032;-bis(dimethylamino)formamidinate, N-dimethylaminoacetamidinate or N-dimethylamino-N&#x2032;-isopropyl-acetamidinate ligands as well as to their preparation and use. The metal complexes are characterized by a five-membered chelate ring. The metal complexes are formed with the metals from the main groups of the PTE, but also with transition-group elements such as tantalum (Ta), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu) or zinc (Zn), and also with precious metals such as palladium (Pd). The complexes of the invention find use as precursors for the preparation of functional layers by means of gas-phase thin-film processes such as CVD, MO-CVD and ALD. Additionally they may be used as catalysts for olefin hydroamination and for olefin polymerization.

Metal complexes with N-Aminoamidinate ligands

A method for the production of N-aryl carbamates (urethanes) and N-aryl isocyanates is described in which aromatic nitro compounds are subjected to a reductive carbonylation in the presence of carbon monoxide and organic compounds carrying hydroxyl groups, wherein the carbonylation is carried out in the presence of metal complex catalysts, for which anionic N,O chelate ligands of the general type [M(N&#x2dc;O)] and [M(O&#x2dc;N&#x2dc;N&#x2dc;O)] containing a bi- or trivalent transition metal of the groups 5 to 11 are used.

Growing community of inventors

Marburg, Germany

Joerg Sundermeyer