Osram Gmbh

Osram Opto Semiconductors Gmbh

Osram Sylvania Inc.

Osram Oled Gmbh

Shin-etsu Chemical Co., Ltd.

Osram Beteiligungsverwaltung Gmbh

Osram Beteilungsverwaltung Gmbh

Joerg Sorg

Ralph Wirth

Krister Bergenek

Stefan Gruber

Dennis Sprenger

Georg Bogner

Reiner Windisch

Andreas Dobner

Alan Lenef

Andreas Biebersdorf

Gertrud Kraeuter

Harald Jaeger

Sergey Kudaev

Toshio Shiobara

Hubert Halbritter

Thomas Schwarz

Berthold Hahn

Tsutomu Kashiwagi

Siegfried Herrmann

Frank Jermann

Stefan Groetsch

Stefan Lange

Ulrich Hartwig

Angela Eberhardt

Axel Kaltenbacher

Madis Raukas

Jan Oliver Drumm

Florian Peskoller

James A Avallon

Florian Boesl

John F Kelso

Martin Daniels

Jasmin Muster

Christine Maier

Christoph Koller

Raimund Schwarz

Joachim Wirth-Schön

Melanie Zumkley

Ruediger Mueller

David Johnston

A laser device comprises a hermetic housing that has an interior and is made at least in part of printed circuit board material, a laser element located in the interior, and at least one inorganic layer which hermetically shields the interior from the printed circuit board material.

Laser device and method for manufacturing a laser device

In one embodiment, an apparatus may include a light source. The apparatus also includes a measuring laser, such as a semiconductor laser. The measuring laser is configured to generate pulses with a maximum pulse duration of 10 ns. A wavelength of maximum intensity of the measuring laser radiation generated by the measuring laser ranges from 400 nm to 485 nm inclusive. The measuring laser radiation is used for distance measurement by means of LIDAR, for example in a car headlight.

Apparatus and headlight

An irradiation unit is disclosed that includes a pump radiation source for emitting pump radiation in the form of a beam, a conversion element for at least partially converting the pump radiation into conversion radiation, and a support on which the conversion element is situated. The support accommodates a through-hole through which the beam including the pump radiation is incident on an incident surface of the conversion element, the though-hole being laterally delimited by an inner wall face of the support, at least one portion of the face tapering in the direction of the incident surface. During operation, the pump radiation conducted in the beam is at least intermittently at least in part, incident on the inner wall face of the support and is reflected thereby onto the incident surface.

Irradiation unit comprising a pump radiation source and a conversion element

An irradiation unit includes a pump radiation source for the emission of pump radiation; and a conversion element for the at least partial conversion of the pump radiation to a conversion radiation. During operation of the irradiation unit, the pump radiation is incident in the form of a beam from the pump radiation source on an incidence surface of the conversion element. A first portion of the pump radiation is incident on the conversion element in a central segment of the beam and a second portion of the pump radiation is incident on the conversion element in an edge segment of the beam surrounding the central segment. The conversion element is provided in such a way that a normalized degree of conversion and/or a normalized degree of scattering is lower for the second portion of the pump radiation than for the first portion of the pump radiation.

Irradiation unit with pump radiation source and conversion element

Electronic component with a support comprising a first inorganic insulating layer and a second inorganic insulating layer, between which a metal core is arranged, a first, a second and a third electrically conductive structure which are arranged on a top surface of the carrier, a first and a second electrical contact point and a thermal contact point, which are arranged on a bottom surface of the carrier, a component and an electrical protection element which are arranged on the side of the top surface of the carrier, in which the first electrically conductive structure is electrically conductively connected to the first electrical contact point, the second electrically conductive structure is electrically conductively connected to the second electrical contact point, the third electrically conductive structure is electrically conductively connected to the thermal contact point, the component is electrically conductively connected to the first and second electrically conductive structures, the electrical protection element is electrically conductively connected to the third electrically conductive structure and the first or second electrically conductive structure.

Electronic component and method for producing an electronic component

A reflective laser activated remote phosphor (LARP) package comprising: a phosphor platelet oriented in a first plane defined by an x-y plane; a laser diode (LD) positioned to be offset along the x-axis from the phosphor platelet and above the first plane along a z-axis perpendicular to the x-y plane, the LD comprising: an output facet configured for emitting a laser beam (LB), the LB comprising: a slow axis oriented in a first direction along which the LB diverges at a first angle; and a fast axis oriented in a second direction along which the LB diverges at a second angle greater than the first angle; wherein the LD is oriented such that: the LB is bisected by the phosphor platelet such that the slow axis of the LB lies in an x-z plane and the fast axis of the LB is perpendicular to an x-z plane.

Integrated planar reflective LARP package and method

An optoelectronic semiconductor chip having a semiconductor body () that is suitable for emitting electromagnetic radiation in a first wavelength range from a radiation exit face () is specified. Furthermore, the semiconductor chip comprises a ceramic or monocrystalline conversion platelet () that is suitable for converting electromagnetic radiation in the first wavelength range into electromagnetic radiation in a second wavelength range, which is different from the first wavelength range, and a wavelength-converting joining layer () that connects the conversion platelet () to the radiation exit face (), wherein the wavelength-converting joining layer () has luminescent material particles () that are suitable for converting radiation in the first wavelength range into radiation in a third wavelength range, which is different from the first wavelength range and the second wavelength range. The wavelength-converting joining layer () furthermore has a thickness of no more than 30 micrometers. A method for fabricating an optoelectronic semiconductor chip, a further semiconductor chip, conversion element and luminescent material are specified.

Optoelectronic semiconductor chip, method for producing an optoelectronic semiconductor chip, conversion element and phosphor for a conversion element

A light generating device, comprising: at least one light emitting diode having a semiconductor layer that emits a first primary light, and having a phosphor layer arranged on the semiconductor layer, and at least one laser for generating at least one laser beam composed of a second primary light, by means of which the phosphor layer is irradiatable, wherein the phosphor layer is configured for at least partly converting the first primary light into at least one first secondary light and for at least partly converting the second primary light into at least one second secondary light. The light generating device is configured to dynamically illuminate the phosphor layer by means of the second primary light.

Light generation with light emitting diode and laser

A laser-activated remote phosphor (LARP) target with a first layer having a first index of refraction and a phosphor dispersed within the first layer. A second layer which has a second index of refraction different from the first index of refraction and adjoins the first layer at an interface. The first index of refraction is higher than the second index of refraction such that the interface is configured to at least partially reflect light emitted from the phosphor.

Laser activated remote phosphor target with low index coating on phosphor, method of manufacture and method for re-directing emissions

A laser activated remote phosphor system may include a radiation source configured to emit excitation radiation and a conversion element which has a phosphor and is able to be irradiated by the excitation radiation. An input coupling surface of the conversion element has a delimitation line beyond which a central excitation spot of the excitation radiation radiates at least in sections.

Laser activated remote phosphor system and vehicle headlights

Various embodiments relate to an optoelectronic component, including a carrier element, on which at least one optoelectronic semiconductor chip is arranged, and a cover, which is mounted on the carrier element in a region extending circumferentially around the semiconductor chip and together with the carrier element forms a sealed cavity in which the at least one optoelectronic semiconductor chip is arranged in an inert gas.

Optoelectronic component with inert gas atmosphere

A light source arrangement is provided. The light source arrangement may include a plurality of semiconductor laser light sources, each having an optical axis. The semiconductor laser light sources are arranged in such a way that their optical axes are oriented parallel to one another so that respective laser light emission sides of the semiconductor laser light sources point in the same spatial direction. The light source arrangement may further include a deflection unit configured to collect and influence beam paths of the laser light emitted by the semiconductor laser light sources in order to form a beam bundle. The semiconductor laser light sources are arranged on a surface of a carrier, distributed at least two-dimensionally over the surface.

Light source arrangement including semiconductor light source

A method for producing a lighting device may include: providing a first mount, fastening a second mount to the first mount, at least partially severing the second mount into at least two parts after fastening of the second mount to the first mount, and fastening at least two luminescence diode chips to that side of the second mount which is remote from the first mount.

Method for producing a lighting device and lighting device

An optoelectronic semiconductor component includes: at least one optoelectronic semiconductor chip, a leadframe having one a plurality of leadframe parts, at least two electrical connection means via which the semiconductor chip is electrically contact-connected to the leadframe, and a potting body, which is fitted to the leadframe and mechanically supports the latter, wherein the one or at least one of the leadframe parts is provided with a reflective coating at a top side, the semiconductor chip is fitted on the reflective coating at the top side, the leadframe includes at least two contact locations, onto which the connection means are directly fitted, and the contact locations are formed from a material that is different from the reflective coating.

Optoelectronic semiconductor component

An optoelectronic semiconductor component includes a connection carrier with at least two connection points and a carrier top that in a main side of the connection carrier, wherein the connection carrier configured with a silicone matrix with a fiber reinforcement, at least one optoelectronic semiconductor chip mounted on the connection carrier and in direct contact therewith, an annular potting body includes a soft silicone on the carrier top and in direct contact with the carrier top, but not in direct contact with the semiconductor chip, and a glass body comprising a glass sheet applied over the semiconductor chip and over sides of the potting body remote from the connection carrier, thereby forming a space between the semiconductor chip and the potting body.

UV- and heat-resistant optoelectronic semiconductor component

Growing community of inventors

Wuppertal, Germany

Joerg Sorg