Infineon Technologies Ag

Qimonda Ag

Joerg Schumann

Recai Sezi

Anna Maltenberger

Andreas Walter

Reimund Engl

Thomas Weitz

Stephan Kudelka

Uwe Schroeder

Elke Erben

Annette Saenger

Tim Boescke

Johannes Heitmann

Lars Oberbeck

The present invention relates to a method for depositing a dielectric material comprising a transition metal compound. After providing a substrate, a first pre-cursor comprising a transition metal compound and a second pre-cursor predominantly comprising at least one of water vapour, ammonia and hydrazine are successively applied on the substrate for forming a first layer of transition metal containing material. In a next step the first pre-cursor and a third pre-cursor comprising at least one of ozone and oxygen are successively applied on the first layer for forming a second layer of the transition metal containing material.

Deposition method for a transition-metal-containing dielectric

A memory cell is provided which comprises two electrodes and a layer arranged in between and comprising an active material comprising in which Rand R, independently of one another, may have the following meaning: &#x2014;H, -alkyl, -aryl, -heteroaryl, &#x2014;O-alkyl, &#x2014;O-aryl, &#x2014;O-heteroaryl, &#x2014;SH, &#x2014;S-alkyl, &#x2014;S-aryl, &#x2014;S-heteroaryl, &#x2014;CO-alkyl, &#x2014;CO-aryl, &#x2014;CO-heteroaryl, &#x2014;CS-alkyl, &#x2014;CS-aryl, &#x2014;CS-heteroaryl, -halogen, &#x2014;CN and/or &#x2014;NO, in which Rand R, Rand R, Rand Rtogether may form a ring, in which Rto R, independently of one another, may have the following meaning: &#x2014;H, -alkyl, -aryl, -heteroaryl, &#x2014;O-alkyl, &#x2014;O-aryl, &#x2014;O-heteroaryl, &#x2014;NH, &#x2014;N(alkyl), &#x2014;N(aryl), &#x2014;N(heteroaryl), &#x2014;SH, &#x2014;S-alkyl, &#x2014;S-aryl, &#x2014;S-heteroaryl, &#x2014;CO-alkyl, &#x2014;CO-aryl, &#x2014;CO-heteroaryl, &#x2014;CS-alkyl, &#x2014;CS-aryl, &#x2014;CS-heteroaryl, -halogen, &#x2014;CN and/or &#x2014;NO, A method for the production of the cells according to the invention and the novel use of a composition which can be used as active material for the memory cells are furthermore provided.

Memory cell, method for the production thereof and use of a composition therefor

Memory cells having two electrodes and a layer arranged in between and including an active material which contains hexakisbenzylthiobenzene, dichlorodicyano-p-benzoquinone and optionally a polymer are provided. Furthermore, a process for the production of the cells according to the invention is provided, as well as the novel use of a composition which can be used as active material for the memory cells.

Resistive memory for low-voltage applications

Growing community of inventors

Dresden, Germany

Joerg Schumann