Vi Systems Gmbh

Infineon Technologies Ag

Joerg-Reinhardt Kropp

Vitaly Shchukin

Nikolay Ledentsov

Michael Kneier

Frank Meyer-Gueldner

An optoelectronic semiconductor device is disclosed wherein the device is a vertical-cavity surface-emitting laser or a photodiode containing a section, the top part of which is electrically isolated from the rest of the device. The electric isolation can be realized by etching a set of holes and selective oxidation of AlGaAs layer or layers such that the oxide forms a continuous layer or layers everywhere beneath the top surface of this section. Alternatively, a device can be grown epitaxially on a semi-insulating substrate, and a round trench around a section of the device can be etched down to the semi-insulating substrate thus isolating this section electrically from the rest of the device. Then if top contact pads are deposited on top of the electrically isolated section, the pads have a low capacitance, and a pad capacitance below two hundred femto-Farads, and the total capacitance of the device below three hundred femto-Farads can be reached.

Low capacitance optoelectronic device

An opto-electronic assembly for high speed opto-electronic signal transmission which comprises:

Opto-electronic assembly for parallel high speed transmission

The optoelectronic assembly for high speed signal transmission based on surface-emitting/receiving components is disclosed. The assembly contains a mounting plate with a top side used for the mounting of the components; single or multiple electrooptical or optoelectronic transducer components with the optical ports of the transducer on the top side and a bottom side used for assembly; a micro-mirror component; an optical transmission path wherein the transmission axis is oriented substantially parallel to the surface of the transducer components and to the top side of the mounting plate; and a transducer component mounted with the bottom side on the mounting plate near a micro-mirror component mounted above the transducer component in such a configuration that the optical transmission path to or from the transducer is reflected at the mirror surface such that the transducer is optically coupled to this same transmission path.

Opto-electronic assembly for high speed transmission

The arrangement has at least two electrooptic transducers ( ) with in each case one optically active zone ( ). Optical connections ( ) which are assigned to the transducers are adjacent at a spacing (a). Optical coupling paths ( ) run via a coupling device ( ) between the connections ( ) and the respectively assigned optically active zones ( ) In order in the case of a very tight spacing (a) to permit a favorable crosstalk response and a cost effective design, the coupling paths ( ) run in such a way that the spacing (A) between two optically active zones ( ) is greater than the spacing (a).

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Berlin, Germany

Joerg-Reinhardt Kropp