Siltronic Ag

Joerg Lindner

Brian Murphy

Maik Haeberlen

Bernd Stritzker

Semiconductor layer structure and a method for producing a structure are provided, including a substrate made of semiconductor material, on which a layer made of a second semiconductor material is situated, furthermore a region () enriched with impurity atoms, which region is situated either in layer () or at a specific depth below the interface between layer () and substrate (), additionally a layer () within the region () enriched with impurity atoms, which layer comprises cavities produced by ion implantation, furthermore at least one epitaxial layer () applied to layer () and also a defect region () comprising dislocations and stacking faults within the layer () comprising cavities, the at least one epitaxial layer () being largely crack-free, and a residual strain of the at least one epitaxial layer () being less than or equal to 1 GPa.

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Bobingen, Germany

Joerg Lindner