Forschungsverbund Berlin E.v.

Joerg Fricke

Goetz Erbert

Hans Wenzel

Paul Crump

Martin Spreemann

Jonathan Decker

The invention relates to a laser diode () which has at least one active layer () which is arranged within a resonator () and is operatively connected to a outcoupling element (), and further at least one contact layer () for coupling charge carriers into the active layer (), wherein the resonator () comprises at least a first section () and a second section (), wherein the second section () comprises a plurality of separate resistor elements () having a specific electrical resistivity greater than the specific electrical resistivity of the regions () between adjacent resistor elements (), wherein a width (W) of the resistor elements () along a longitudinal axis (X) of the active layer () is less than 20 &#x3bc;m, and a projection of the resistor elements () on the active layer () along the first axis (Z) overlap with at least 10% of the active layer ().

Laser diode with improved electrical conduction properties

A diode laser and a laser resonator for a diode laser are provided, which has high lateral beam quality at high power output, requires little adjustment effort and is inexpensive to produce. The laser resonator according to the invention comprises a gain section (GS), a first planar Bragg reflector (DBR) and a second planar Bragg reflector (DBR), wherein the gain section (GS) has a trapezoidal design and the first planar Bragg reflector (DBR) is arranged on a first base side of the trapezoidal gain section (GS) and the second planar Bragg reflector (DBR) is arranged on the opposing base side of the trapezoidal gain section (GS), wherein the width (D) of the first planar Bragg reflector (DBR) differs from the width (D) of the second planar Bragg reflector (DBR).

Diode laser and laser resonator for a diode laser having improved lateral beam quality

A broad area laser, with high efficiency and small far-field divergence, has an active layer, a first contact and a second contact, each having a width larger than 10 &#x3bc;m. An anti-wave guiding layer, which is positioned laterally with respect to the active region, is enclosed between the first and second contacts, wherein a refractive index of the anti-wave guiding layer is larger than a minimum refractive index of cladding layers. A minimum distance between the anti-wave guiding layer and a projection of one of the contacts on the plane of the anti-wave guiding layer is between 0 and 100 &#x3bc;m.

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Berlin, Germany

Joerg Fricke