Lawrence Livermore National Security, LLC

University of Illinois

Beijing Apollo Ding Rong Solar Technology Co., Ltd.

Joel Varley

Vincenzo Lordi

Lars F Voss

John Frederick Corson

Juergen Biener

Neil Mackie

Monika Margarete Biener

Clint Frye

Weijie Zhang

Zhen Qi

Angus A Rockett

Vedasri Vedharathinam

Noah Patrick Allen

Sneha Anil Akhade

Geordie Zapalac

Kyoung Eun Kweon

Stephen Weitzner

Xiaoqing He

An apparatus includes a heterostructure including a substrate of Group-III-nitride material, a source layer including a dopant positioned on a surface of the substrate, and a conductive cap layer positioned on the source layer. A method of electric field-enhanced impurity diffusion includes obtaining a heterostructure including a substrate of Group-III-nitride semiconductor material, a source layer including a dopant positioned directly on the substrate, and a conductive cap layer positioned above the source layer, and applying a thermal annealing treatment to the heterostructure. An electric field gradient is established within the source layer and the cap layer for causing diffusion of an element from the substrate to the cap layer, and for causing diffusion of the dopant from the source layer to a former location of the element in the substrate thereby changing a conductivity and/or magnetic characteristic of the substrate.

Field assisted interfacial diffusion doping through heterostructure design

A product includes a dilute alloy catalyst for carbon dioxide reduction. The catalyst has a majority component and at least one minority component. The majority component is present in a concentration of greater than 90 atomic percent of the catalyst. The majority component is copper, and each minority component is selected from the group consisting of: a transition metal, a main group metal, a lanthanide, and a semimetal. A method includes forming a product on a cathode. The product includes a dilute alloy catalyst for carbon dioxide reduction. The catalyst has a majority component and at least one minority component. The majority component is present in a concentration of greater than 90 atomic percent of the catalyst. The majority component is copper, and each minority component is selected from the group consisting of: a transition metal, a main group metal, a lanthanide, and a semimetal.

Dilute alloy catalysts for electrochemical CO2 reduction

A method of manufacturing a photovoltaic structure includes forming a p-type semiconductor absorber layer containing a copper indium gallium selenide based material over a first electrode, forming a n-type cadmium sulfide layer over the p-type semiconductor absorber layer by sputtering in an ambient including hydrogen gas and oxygen gas, and forming a second electrode over the cadmium sulfide layer.

Hexagonal phase epitaxial cadmium sulfide on copper indium gallium selenide for a photovoltaic junction

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Joel Varley