Eaton Corporation

Axcelis Technologies, Inc.

Joel Penelon

Ivan Berry

Andre G Cardoso

A method and apparatus for generating a plasma in a gas using a thermal source and a heat source in a common reaction zone. A process gas is flowed to a reaction zone and heated with a thermal energy source. Within the same reaction zone, a current is passed in the gas to generate a plasma within the gas. The plasma is directed to a substrate for treatment. The substrate may be a silicon wafer as part of an etching, ashing, wafer cleaning, and chemical vapor deposition.

Chemical plasma cathode

A temperature probe for use in low pressure processes having an improved thermal response wherein fluid is supplied to a fluid transport passageway in the probe head for creating an increased pressure between the probe head and a semiconductor wafer for increasing the thermal conductivity therebetween.

Temperature probe and measurement method for low pressure process

A radiant heating apparatus for reducing the cumulative temperature gradient over a semiconductor workpiece during a low temperature process is comprised of a plurality of reflecting units, wherein each reflecting unit is comprised of a back reflector, a tubular reflector extending from the back reflector towards the workpiece, and a radiant energy source disposed in the tubular reflector in front of the back reflector, wherein a cross section of the tubular reflector is in the shape of a truncated segment of a circle.

Growing community of inventors

Monrovia, MD, United States of America

Joel Penelon