Motorola Corporation

Joel Patrick Mitchell

Gary Pfeffer

Mark Douglas Hall

Gregory S Ferguson

Fred Cumplan

Fred Cumpian

Johanes P Suryanata

A method for forming a cavity ( ) to a structure such as a poly fuse ( ) with a deep etch process whereby a mask is formed over the structure a first dielectric layer ( ) and an etch partially through the first dielectric layer is performed. Next, a second dielectric layer ( ) is deposited and a second mask is formed for completing the etch to the structure. Finally, an etch through the second dielectric ( ) to an area at or near the structure is performed. A resultant device has non-etched second dielectric material on the sidewalls of the etch cavity

Method for forming a cavity capable of accessing deep fuse structures and device containing the same

A method for forming a cavity (30) to a structure such as a poly fuse (114) with a deep etch process whereby a mask is formed over the structure a first dielectric layer (23) and an etch partially through the first dielectric layer is performed. Next, a second dielectric layer (34) is deposited and a second mask is formed for completing the etch to the structure. Finally, an etch through the second dielectric (34) to an area at or near the structure is performed. A resultant device has non-etched second dielectric material on the sidewalls of the etch cavity 30.

Method for forming a cavity capable of accessing deep fuse structures

A process for dry etching a passivation layer (42) of a semiconductor device is performed such that a low radio frequency (RF) power step is used when an underlying bond pad (22) is initially exposed and a high RF power step is used after the initial exposure. The process virtually eliminates or reduces the likelihood of bond pad (22) staining, particularly when a polyimide die coat layer (72) is subsequently formed over the semiconductor device (50).

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Austin, TX, United States of America

Joel Patrick Mitchell