Commissariat a L'energie Atomique

Joel Magnin

Jean-Marc Fedeli

Hubert Jouve

Marc Rabarot

Marie-Therese Delaye

Christian Pisella

Christine Louis

Maryse Vabre

Jean M Fedeli

Detection device for a magnetic bubble memory having a detection zone (6) constituted by rows (7) of patterns (8) suitable for the propagation of bubbles in strip form, as well as a transition zone (10) making it possible to draw out the bubbles in strip form. The transition zone 10 has at least one row (18) of soft magnetic material patterns, (18) which has at least one central pattern (22) and a second pattern (24) adjacent to the central pattern (22). The central pattern (22) has a first part (22a) able to guide a magnetic bubble and a second part (22b) able to aid the propagation of a bubble in strip form. The second pattern (24) is able to aid the propagation of a bubble in strip form, while not disturbing the propagation of a bubble along the first part (22a) of the central pattern (22).

Detection device for magnetic bubble memory

Magnetic bubble memory in hybrid technology using rows of chevron patterns. The memory detection system has an active detection zone (4) constituted by rows of chevrons, in order to stretch into the form of a strip the bubbles from a propagation path (2), and a first detector (8); a bubble elimination zone (12) constituted by forcing back means (18) for stopping the advance of the bubbles and for forcing them outside the detection system; and a passive detection zone (6) located following the bubble elimination zone (12) and incorporating a second detector (9), to which no bubble must be exposed, in order to eliminate the unwanted signal due to the influence of a rotary magnetic field necessary for the propagation of the bubbles. According to the invention, elimination zone (12) is provided with at least one barrier (20) produced by ion implantation in order to block the passage of the bubbles from active zone (4) to passive zone (6). The barrier or barriers (20, 22, 26, 28, 30) can be constituted by a high energy implantation of H.sub.2.sup.+ ions.

Detection system for a magnetic bubble memory in hybrid technology

A duplicator in a magnetic bubble memory with non-implanted patterns, a process for realizing the duplicator and a serial - parallel magnetic bubble memory having at least one of the aforementioned duplicators are disclosed. In a magnetic bubble memory having a first group of aligned non-implanted patterns and a second group of aligned non-implanted patterns, the duplicator according to the invention is characterized in that it comprises an extension conductor and a breaking conductor, the extension conductor linking the first and second groups of patterns, the breaking conductor being positioned transversely with respect to the extension conductor, the geometry of the end pattern of the first group of patterns being such that the duplication position is a stable position and the geometry of the patterns of the second group adjacent the axis of the first group being such that the reception position of the duplicated bubble is a stable position.

Duplicator in a magnetic bubble memory and process for duplicating

A magnetic bubble memory, in which the PI junction between a first propagation track defined by deposited patterns and a second propagation track defined by the boundary between an implanted zone and a non-implanted zone is defined by an overlap between such propagation tracks, wherein the overlap zone has a surface substantially equal to the surface of a magnetic bubble and forms a stable position for each of the two propagation paths.

Hybrid junction for a magnetic bubble memory

A bubble memory with a hybrid junction formed between a first propagation track defined by a boundary between an implanted area and a non-implanted area and a second propagation track defined by a sequence of deposited patterns. The overlap zone between the tracks has a surface substantially equal in size to the magnetic bubble. The boundary cleared by the magnetic bubble has a direction perpendicular to an easy magnetization axis of the magnetic material of the memory, and an implanted area is formed beneath one leg of the deposited pattern.

Magnetic bubble memory with a hybrid junction

In a magnetic bubble memory having a first system of aligned ion-implanted patterns and a second system of aligned ion-implanted patterns, a swap gate having a transfer conductor for transferring a magnetic bubble from the second system to the first system, and an erase conductor for erasing the bubble to be replaced on the first system.

Swap gate in an ion-implanted bubble memory

A magnetic bubble memory is formed of a series of longitudinally oriented minor registers and at least one transversely oriented major access register, all of these registers having patterns with boundaries defined by ionically implanted zones of a magnetic garnet layer. The memory is formed also with a structure for transferring bubbles from one end of the minor register to the major register, and is further configured with layered material having a predetermined format for displacing the bubbles in each minor register upon application of a rotating magnetic field. The physical structure of the memory also permits a displacement of the bubbles of the major register by the circulation of currents in two electrically conductive sheets which are superimposed on the magnetic garnet layer. The sheets have windows facing the patterns of the register, with the windows being arranged with end portions thereof in registration with the pattern boundaries to enable the bubbles to circulate while remaining in contact with the boundaries of the major register pattern in implanted zones of the garnet.

Magnetic bubble memory

The invention relates to a magnetic bubble memory having a first layer of monocrystalline magnetic material with at least one crystallographic axis having the property of being aplanar easy magnetization axis, whereby the first layer has groups of unimplanted, contiguous and aligned motifs, called first motifs, permitting the propagation of the bubbles into a second magnetic layer, positioned below the first magnetic layer, the first motifs being shaped in such a way that two cavities are defined between two first adjacent motifs, wherein each group of first motifs has an axis such that the first motifs of the group are arranged symmetrically with respect to the axis, the groups being arranged parallel to the crystallographic axis of the first layer of material, and wherein it comprises, associated with each group, an electrical conductor, called the first conductor, permitting the duplication of the bubbles, each conductor being arranged perpendicular to the crystallographic axis of the first layer of material, the corresponding group of first motifs being traversed by the conductor.

Magnetic bubble memory with unimplanted motifs

A magnetic bubble store, using adjoining non-implanted motifs as bubble-propagating motifs, the store comprising 3n identical, electrically interconnected storage devices, n being a positive integer, which are produced on an identical circuit chip and each comprise minor loops for storing the bubbles, at least one major loop acting as an access loop for the minor loops, first electrical component enabling bubbles to be transferred from the minor loops to the major loop and vice versa, a second electrical component enabling bubbles to be produced on the major loop, and a third electrical component enabling the bubbles on the major loop to be detected, the third, identical component, each formed by an electric conductor for bubble extension and contraction and a magneto-resistive element, being disposed in directions making an angle of 120.degree. with one another.

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Saint Martin d'Heres, France

Joel Magnin