Stmicroelectronics S.a.

Stmicroelectronics (rousset) Sas

Joel Damiens

Philippe Candelier

Fabrice Marinet

Elise Le Roux

Stephane Lacouture

Elise Leroux

A device includes a first switch, a first irreversibly programmable memory point, and a second irreversibly programmable memory point coupled in parallel with the first irreversibly programmable memory point. The first switch and the parallel combination of the first and second irreversibly programmable memory points are coupled in series between a first node and a second node.

Electronic chip memory

A method for controlling the breakdown of an antifuse memory cell formed on a semiconductor substrate, including the steps of: applying a programming voltage; detecting a breakdown time; and interrupting the application of the programming voltage at a time following the breakdown time by a post-breakdown time.

Method for controlling the breakdown of an antifuse memory cell

For programming an antifuse memory, the power consumption of the memory is assessed during programming mode. The power consumption is compared with a threshold. When the threshold is exceeded, indicative of successful programming of the antifuse memory cell, the programming mode is terminated.

Growing community of inventors

Le Touvet, France

Joel Damiens