Micron Technology Incorporated

Joel D Peterson

Damir Fazil

Lifang Xu

Justin B Dorhout

Anilkumar Chandolu

Albert Fayrushin

Christopher J Larsen

Prakash Rau Mokhna Rau

S M Istiaque Hossain

Arun Kumar Dhayalan

Rokibul Islam

John David Hopkins

George Matamis

Paolo Tessariol

Indra V Chary

Nancy M Lomeli

Matthew J King

David A Kewley

Adam L Olson

Erik R Byers

Matthew Park

Xiaosong Zhang

Dimitrios Pavlopoulos

Merri Lyn Carlson

Jason Reece

Shruthi Kumara Vadivel

Biow Hiem Ong

Bo Zhao

Michael J Gossman

Martin Jared Barclay

Tien Minh Quan Tran

Eldon Nelson

Kah Sing Chooi

Zhen Feng Yow

A microelectronic device includes a stack structure including a vertically alternating sequence of conductive structures and insulating structures arranged in tiers, a dielectric-filled opening vertically extending into the stack structure and defined between two internal sidewalls of the stack structure, a stadium structure within the stack structure and comprising steps defined by horizontal ends of at least some of the tiers, a first ledge extending upward from a first uppermost step of the steps of the stadium structure and interfacing with a first internal sidewall of the two internal sidewalls of the stack structure, and a second ledge extending upward from a second, opposite uppermost step of the steps of the stadium structure and interfacing with a second, opposite internal sidewall of the two internal sidewalls.

Microelectronic devices including stadium structures

Some embodiments include an integrated assembly having a first deck. The first deck has first memory cell levels alternating with first insulative levels. A second deck is over the first deck. The second deck has second memory cell levels alternating with second insulative levels. A cell-material-pillar passes through the first and second decks. Memory cells are along the first and second memory cell levels and include regions of the cell-material-pillar. An intermediate level is between the first and second decks. The intermediate level includes a buffer region adjacent the cell-material-pillar. The buffer region includes a composition different from the first and second insulative materials, and different from the first and second conductive regions. Some embodiments include methods of forming integrated assemblies.

Integrated assemblies, and methods of forming integrated assemblies

A method used in forming a memory array comprises forming a stack comprising vertically-alternating insulative tiers and wordline tiers. The stack comprises an insulator tier above the wordline tiers. The insulator tier comprises first insulator material comprising silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus. The first insulator material is patterned to form first horizontally-elongated trenches in the insulator tier. Second insulator material is formed in the first trenches along sidewalls of the first insulator material. The second insulator material is of different composition from that of the first insulator material and narrows the first trenches. After forming the second insulator material, second horizontally-elongated trenches are formed through the insulative tiers and the wordline tiers. The second trenches are horizontally along the narrowed first trenches laterally between and below the second insulator material. Elevationally-extending strings of memory cells are formed in the stack. Structure independent of method is disclosed.

Memory arrays and methods used in forming a memory array

Growing community of inventors

Boise, ID, United States of America

Joel D Peterson