Micron Technology Incorporated

Joe Lindgren

Dale Collins

Some embodiments include methods for depositing copper-containing material utilizing physical vapor deposition of the copper-containing material while keeping a temperature of the deposited copper-containing material at greater than 100&#xb0; C. Some embodiments include methods in which openings are lined with a metal-containing composition, copper-containing material is physical vapor deposited over the metal-containing composition while a temperature of the copper-containing material is no greater than about 0&#xb0; C., and the copper-containing material is then annealed while the copper-containing material is at a temperature in a range of from about 180&#xb0; C. to about 250&#xb0; C. Some embodiments include methods in which openings are lined with a composition containing metal and nitrogen, and the lined openings are at least partially filled with copper-containing material. Some embodiments include semiconductor constructions having a metal nitride liner along sidewall peripheries of an opening, and having copper-containing material within the opening and directly against the metal nitride liner.

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Boise, ID, United States of America

Joe Lindgren