Air Liquide America, L.p.

Startec Ventures, Inc.

Athens Corporation

Air Liquide Electronics Chemicals & Services, Inc.

Joe G Hoffman

R Scot Clark

Wallace I Yuan

John B Davison

Bruce A Lipisko

David W Persichini

Alan W Jones

Allen H Jones, Jr

Wallace Yuan

Mary Dykstra Havlicek

Tracey Jacksier

Hwa-Chi Wang

Ashutosh Misra

Mindi Xu

Karl J Urquhart

David L Snyder

Anthony J Schleisman

John B Thompson

Stephen S Baird

Alan H Jones

R Scott Clark

Marshall E Cummings

Provided are a preconditioned resin and methods of preparation thereof as well as methods for purifying hydrogen peroxide solutions. The method includes preconditioning an anion exchange resin, wherein an anion exchange resin bed is provided and carbon dioxide gas is passed through the resin bed.

Resin preconditioning methods using carbon dioxide and methods for purifying hydrogen peroxide

Provided are a method and apparatus for continuously blending a chemical solution for use in semiconductor processing. The method involves the step of: mixing a first chemical stream with a second chemical stream in a controlled manner, to form a stream of a solution having a predetermined formulation. The apparatus allows one to practice the above method. The method and apparatus can accurately provide chemical solutions of desired concentration in a continuous manner. The invention has particular applicability in semiconductor device fabrication.

Method for continuously blending chemical solutions

A method of integrated resin preconditioning and hydrogen peroxide purification is provided. The method includes preconditioning a resin by washing the resin with deionized water to produce a washed resin, and contacting an effective amount of a preconditioning hydrogen peroxide solution with the washed resin to remove impurities from the washed resin, thereby producing a preconditioned resin. The method further includes passing a hydrogen peroxide solution to be purified through a bed of the preconditioned resin to form a hydrogen peroxide solution having a TOC content lower than a TOC content of the hydrogen peroxide solution to be purified, and passing the hydrogen peroxide solution having a TOC content lower than the TOC content of the hydrogen peroxide solution to be purified through one or more ion-exchange resin beds or directing the hydrogen peroxide solution having a TOC content lower than the TOC content of the hydrogen peroxide solution to be purified to a point of use in a semiconductor manufacturing facility the. The preconditioning hydrogen peroxide solution does not pass through the ion exchange resin beds and is not directed to the point of use.

Integrated method of preconditioning a resin for hydrogen peroxide purification and purifying hydrogen peroxide

Provided are methods for making a slurry composition, suitable for use in a chemical-mechanical planarization process. Also provided are compositions made by such methods. The methods comprise combining: (a) abrasive particles; (b) a suspension medium; (c) a peroxygen compound; (d) an etching agent; and (e) an alkyl ammonium hydroxide. The methods and compositions of the present invention are particularly applicable to the semiconductor manufacturing industry.

Compositions for use in a chemical-mechanical planarization process

Provided are ionic purifiers and methods that are suitable for providing an ultra-high-purity chemical to a semiconductor manufacturing process. The ionic purifiers include a vapor inlet introducing a chemical vapor to be purified into a column. A high-purity water inlet continuously introduces high-purity water into the column. The high-purity water contacts the chemical vapor to be purified, thereby forming a purified chemical vapor and contaminated water. A vapor outlet removes the purified chemical vapor from the column. A liquid outlet removes the contaminated water from the column. The invention has particular applicability in the semiconductor manufacturing industry.

Ionic purifier

Provided is a novel method and system for preparing ultra-high-purity buffered-hydrofluoric acid or ammonium fluoride controlled concentration The method comprises bubbling purified ammonia vapor into ultra-pure hydrofluoric acid. The inventive method and system can be used as an on-site subsystem in a semiconductor device fabrication facility for supplying the buffered-hydrofluoric acid and ammonium fluoride to points of use in the semiconductor device fabrication facility.

On-site generation of ultra-high-purity buffered-HF and ammonium fluoride

Provided is a novel on-site system and method for providing ultra-high-purity nitric acid to a point of use. The system includes a source of nitric acid at a concentration greater than 68 wt %; a reflux distillation column having an inlet in communication with the nitric acid source for introducing nitric acid into the column, a reboiler, and a condensate outlet to provide a flow of nitric acid condensate from the column; a reservoir in communication with the condensate outlet for receiving the flow of nitric acid condensate; and piping for delivering nitric acid from the reservoir to a point of use. The system and method can be used as an on-site subsystem, in a semiconductor device fabrication facility for supplying the nitric acid condensate to points of use in the semiconductor device fabrication facility.

On-site manufacture of ultra-high-purity nitric acid

A system for purification and generation of hydrofluoric acid on-site at a semiconductor device fabrication facility. An evaporation stage (optionally with arsenic oxidation) is followed by a fractionating column to remove most other impurities, an Ionic Purifier column to suppress contaminants not removed by the fractionating column, and finally the HF Supplier (HFS).

On-site manufacture of ultra-high-purity hydrofluoric acid for

System and method for on-site mixing of ultra-high-purity chemicals for

Highly purified ammonia for use in processes for the production of high-precision electronic components is prepared on-site by drawing ammonia vapor from a liquid ammonia reservoir, passing the vapor through a filter capable of filtering out particles of less than 0.005 micron in size, and scrubbing the filtered vapor in a high-pH aqueous scrubber.

Point-of-use ammonia purification for electronic component manufacture

Highly purified ammonia for use in semiconductor manufacturing is prepared on-site by drawing ammonia vapor from a liquid ammonia reservoir, passing the vapor through a filter capable of filtering out particles of less than 0.005 micron in size, and scrubbing the filtered vapor in a high-pH aqueous scrubber.

On-site ammonia purification for semiconductor manufacture

Highly purified HCl for use in semiconductor manufacturing is prepared on-site by drawing HCl vapor from a liquid HCl reservoir, and scrubbing the filtered vapor in a low-pH aqueous scrubber.

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Cardiff, CA, United States of America

Joe G Hoffman