Globalfoundries Inc.

Jochonia N Nxumalo

Chandrasekharan Kothandaraman

Sami Rosenblatt

John Matthew Safran

Joyce C Liu

Yun-Yu Wang

Terence Lawrence Kane

Ahmad D Katnani

Jeffrey J Brown

Michael Joseph MacDonald

Matthew F Stanton

Kenneth A Bandy

Dimitrios Ioannou

Robert P Marsin

Methods of improving hot carrier parameters in a field-effect transistor by hydrogen reduction. A gate structure of the field-effect transistor is formed on a substrate, and the substrate is heated inside a deposition chamber to a given process temperature for a given time period. After the time period concludes, a conformal layer is deposited at the given process temperature over the gate structure, and is subsequently etched to form sidewall spacers on the gate structure. After the sidewall spacers are formed, a capping layer is conformally deposited over the gate structure and the sidewall spacers, and cured with an ultraviolet light treatment. An interconnect structure may be formed over the field-effect transistor and the capping layer, and a moisture barrier layer may be formed over the interconnect structure. The moisture barrier layer is composed of a material that is permeable to hydrogen and impermeable to water molecules.

Mitigation of hot carrier damage in field-effect transistors

The present disclosure relates to semiconductor structures and, more particularly, to Through-Silicon Via (TSV) structures with improved substrate contact and methods of manufacture. The structure includes: a substrate of a first species type; a layer of different species type on the substrate; a through substrate via formed through the substrate and comprising an insulator sidewall and conductive fill material; a second species type adjacent the through substrate via; a first contact in electrical contact with the layer of different species type; and a second contact in electrical contact with the conductive fill material of the through substrate via.

Through-silicon via with improved substrate contact for reduced through-silicon via (TSV) capacitance variability

An apparatus and method for facilitating Atomic Force Microscopy, SEM Nano-Probing, Scanning Probe Microscopy, and Collimated Ion Milling, through the implementation of a removable, magnetized fixture for fixing the position of a sample requiring surface treatment, the fixture attachable to a holder requiring surface treatment, the holder being mountable in various instruments, the fixture being transportable in a container having a magnetized surface plate or disc for magnetic attachment of said fixture, with the container having a valve to permit alternative evacuation and backfill with an inert gas to protect the sample surface.

Apparatus and method for atomic force probing/SEM nano-probing/scanning probe microscopy and collimated ion milling

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Wappingers Falls, NY, United States of America

Jochonia N Nxumalo