Nexperia B.v.

Nxp B.v.

Jochen Wynants

Hans-Martin Ritter

Steffen Holland

Zhihao Pan

Joachim Utzig

Wolfgang Schnitt

Friedrich E Hahn

Tobias Sprogies

Frank Burmeister

Thomas Igel-Holtzendorff

Godfried Henricus Josephus Notermans

Olaf Pfennigstorf

Rainer Mintzlaff

Martin Lübbe

A semiconductor device and method of manufacturing a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a semiconductor layer located on the substrate; at least one shallow trench and at least one deep trench. Each of the at least one shallow trench and the at least one deep trench extending from a first major surface of the semiconductor layer. Sidewall regions and base regions of the trenches comprise a doped trench region and the trenches are at least partially filled with a conductive material contacting the doped region. The shallow trenches terminate in the semiconductor layer and the deep trench terminates in the semiconductor substrate.

Multi-trench semiconductor device and method of manufacture thereof

A semiconductor device and a method of making the same. The device includes a semiconductor substrate provided in a chip-scale package (CSP). The device also includes a plurality of contacts provided on a major surface of the substrate. The device further includes an electrically floating metal layer forming an ohmic contact on a backside of the semiconductor substrate. The device is operable to conduct a current that passes through the substrate from a first of said plurality of contacts to a second of said plurality of contacts via the metal layer on the backside.

Semiconductor device

A semiconductor device and a method of making the same. The device includes a substrate comprising a major surface and a backside. The device also includes a dielectric partition for electrically isolating a first part of the substrate from a second part of the substrate. The dielectric partition extends through the substrate from the major surface to the backside.

Semiconductor substrate with electrically isolating dielectric partition

A monolithically integrated punch-through diode with a Schottky-like behavior. This is achieved as a Schottky-metal area () is deposited onto at least part of the first p-doped well's () surface. The Schottky-metal area () and the p-doped well () form the metal-semiconductor-transition of a Schottky-diode. The overvoltage protection of the inventive PT-diode is improved as the forward characteristic has a voltage drop that is less than 0.5V.

Punch-through diode and method of processing the same

Growing community of inventors

Hamburg, Germany

Jochen Wynants