Infineon Technologies Ag

Qimonda Ag

Infineon Technologies LLC

Utac - United Test and Assembly Test Center Ltd.

Jochen Thomas

Wolfgang Hetzel

Ingo Wennemuth

Peter Weitz

Jurgen Grafe

Jens G Pohl

Harry Hedler

Anton Legen

Minka Gospodinova-Daltcheva

Maksim Kuzmenka

Dominique Savignac

Juergen Grafe

Sylke Ludewig

Fung Leng Chen

Seong Kwang Brandon Kim

Harry Huebert

Rajesh Subraya

Olaf Schoenfeld

Wee Lim Cha

Yi-Sheng Anthony Sun

Minka Gospodinova

A semiconductor component () has an interposer substrate () as stack element of a semiconductor component stack (). The interposer substrate () has, on one of the interposer substrate sides (), a semiconductor chip protected by plastics composition () in its side edges (). An interposer structure () partly covered by a plastics composition () is arranged on the interposer side () opposite to the semiconductor chip (). Edge regions () of the interposer substrate () remain free of any plastics composition () and have, on both interposer sides () external contact pads () which are electrically connected to one another via through contacts ().

Semiconductor component comprising an interposer substrate

A semiconductor device with a plastic package molding compound, a semiconductor chip and a leadframe is disclosed. In one embodiment, the semiconductor chip is embedded in a plastic package molding compound. The upper side of the semiconductor chip and the plastic package molding compound are arranged on a leadframe. Arranged between the leadframe and the plastic package molding compound with the semiconductor chip is an elastic adhesive layer for the mechanical decoupling of an upper region from a lower region of the semiconductor device.

Semiconductor device with plastic package molding compound, semiconductor chip and leadframe and method for producing the same

An apparatus and a method of manufacture for a stacked-die assembly. A first die is placed on a substrate such that the backside of the die, i.e., the side opposite the side with the bond pads, is coupled to the substrate, preferably by an adhesive. Wire leads electrically couple the bond pads of the first die to contacts on the substrate. A second die is placed on the first die, and wire leads electrically couple the bond pads of the second die to contacts on the substrate. Preferably, a spacer is placed between the first die and the second die. Additional dies may be stacked on the second die.

Integrated circuit with re-route layer and stacked die assembly

A BGA package is disclosed including a base IC structure having a base substrate, with an opening running length-wise there through. A first semiconductor chip is mounted face-down on the base substrate so the bond pads thereof are accessible through the opening. The package also includes a secondary IC structure including a secondary substrate, having an opening running there through, and a second semiconductor chip. The second chip is mounted face-down on the secondary substrate so that the bond pads thereof are accessible through the opening in the secondary substrate. An encapsulant fills the opening in the secondary substrate and forms a substantially planar surface over the underside of the secondary substrate. The substantially planar surface is mounted to the first chip of the base IC structure through an adhesive. Wires connect a conductive portion of the secondary IC structure to a conductive portion of the base IC structure.

Multi-chip ball grid array package and method of manufacture

Embodiments provide for integrated circuit chip and device having such an integrated circuit, in which different types of pads are arranged in separate rows. In one embodiment the pads are arranged to reduce the loop inductance of corresponding signal and power supply bond wires.

Integrated circuit chip and integrated device

The present invention relates to a multi-chip device comprising a substrate having a first surface on which a number of first contact elements is provided, a plurality of integrated circuit chips arranged in a chip stack which is arranged on a second surface of the substrate opposing the first surface, wherein each of the chips having a surface on which a number of second contact elements are provided, wherein a first one of the chips and the second contact elements thereon is arranged such that its second contact elements are uncovered by any of the chips or by the substrate and face towards the second surface of the substrate; and connecting elements which are arranged such as to connect at least one of the first contact elements of the substrate and at least one of the second contact elements of the first chip.

Multi-chip device and method for producing a multi-chip device

A semiconductor module having an internal semiconductor chip stack on a wiring substrate is disclosed. In one embodiment, the semiconductor chip stack has semiconductor chips which are arranged such that they are offset, the semiconductor chips having bonding connection pads in at least one edge region of their active top side. These bonding connection pads are electrically connected to the wiring substrate via bonding connections. In this case, the semiconductor chips are stacked on top of one another in an offset manner such that the bonding connection pads remain free of a semiconductor chip which is stacked on top of them. In this case, the semiconductor chips may be identical silicon chips which may differ, for example in pairs, in terms of their wiring structure for the centrally arranged contact areas in different edge regions.

Semiconductor module having an internal semiconductor chip stack, and method for producing said semiconductor module

A semiconductor device includes a plastic package, at least one semiconductor chip and a rewiring level. The rewiring level includes an insulating layer and a rewiring layer. The rewiring layer includes either signal conductor paths and ground or supply conductor paths arranged parallel to one another and alternately, or only signal conductor paths arranged parallel to one another. In the latter case, an electrically conducting layer of metal which can be connected to ground or supply potential is additionally provided as a termination of the rewiring level or in the form of a covering layer.

Semiconductor device with a rewiring level and method for producing the same

The present invention relates to a multi-chip device comprising a plurality of chip stacks each including a plurality of single chips stacked on each other, wherein the stacked single chips are electrically interconnected by one or more through-chip-connection extending through at least one of the single chips and a substrate providing one or more first contact elements each of which is in contact with one of the through-chip-connections and providing one or more second contact elements being in electrical contact with the first contact elements, wherein the plurality of chip stacks are stacked onto each other and wherein the second contact elements of one of the chip stacks each being arranged to be in contact to one or more third contact elements of an adjacent one of the chip stacks.

The invention relates to an electronic component having a multilayered rewiring plate, which carries a circuit chip, in particular a magnetic memory chip, and connects contact areas of the chip to external contacts of the electronic component via rewiring lines. The rewiring plate has at least one patterned, magnetic shielding layer made of an amorphous metal or an amorphous metal alloy. Furthermore, the invention encompasses a method for producing this electronic component.

Electronic component with multilayered rewiring plate and method for producing the same

A connecting element for electrically connecting a semiconductor chip and a superordinate circuit board includes an elastic metal strip that is bent forming two metal limbs with flattened limb ends, thus forming a base between the metal limbs which is suitable for contacting and providing electrical connectivity to a plurality of contact pads of a superordinate circuit board. At least one of the two limb ends is electrically connected to the contact areas of a semiconductor chip, while the other limb end is elastically supported on the top side of the semiconductor chip, thereby enabling the connecting element to be self supporting.

Self-supporting connecting element for a semiconductor chip

A method of stacking semiconductor chips includes providing four semiconductor chips that each include a top surface with central bond pads. Each of the bond pads is electrically coupled to second bond pads located in a peripheral portion of the semiconductor chip through a conductive layer. The first and the second semiconductor chips are arranged alongside one another on a carrier substrate. The second bond pads from the first and second semiconductor chips are bonded to corresponding landing pads on the substrate. The third semiconductor chip is then stacked over the first semiconductor chip and the fourth semiconductor chip over the second semiconductor chip. The second bond pads of the third and fourth semiconductor chips can then be bonded to contact pads of the substrate. The substrate can then be separated into a first stack that includes the first and third semiconductor chips and a second stack that includes the second and fourth semiconductor chips.

Method for manufacturing a stack arrangement of a memory module

The invention relates to an FBGA arrangement, comprising a substrate on which at least one chip is chip-bonded face-down, which has a central row of bonding pads connected to contact islands (landing pads) on the substrate by a bonding channel in the substrate via wire bridges, which substrate, for its part, is provided with soldering balls&#x2014;arranged in an array&#x2014;for contact connection to a printed circuit board, and the contact islands and the soldering balls being connected to one another via a rewiring of the substrate. The preferred embodiment of the invention is intended to provide an FBGA arrangement which supports the center pad row technology and at the same time has low electrical parasitics. This is achieved by virtue of the fact that at least two substrates () are provided, the substrates () are provided substratewise in each case with bonding channels () having different dimensions, in a manner forming a multistage bonding channel, the bonding channels () in the ball-side substrate () having larger dimensions than those in the chip-side substrate ().

FBGA arrangement

An electronic component has a chip stack with a first semiconductor chip, a second semiconductor chip, and a large number of flat conductors configured in between the first semiconductor chip and the a second semiconductor chip. The flat conductors have a central section on which the semiconductor chips are mounted. First bonding connections connect the first semiconductor chip to inner sections of the flat conductors. Second bonding connections connect the second semiconductor chip to transitional sections of the flat conductors. The outer sections of the flat conductors project out of a package.

Growing community of inventors

Munich, Germany

Jochen Thomas