Soitec

S.o.i.tec Silicon on Insulator Technologies

S.o.i. Tec Silicon

Jochen Maehliss

Bernd Kolbesen

Alexandra Abbadie

Romana Hakim

Francois Brunier

A chromium-free etching composition suitable for treating various silicon-containing surfaces, including strained silicon on insulator surfaces as well as stressed silicon surfaces. The etching composition invention includes hydrofluoric acid, nitric acid, acetic acid and an alkali iodide, preferably potassium iodide, present in an amount of 1 mmol/100 ml or more.

Etching composition, in particular for strained or stressed silicon materials, method for characterizing defects on surfaces of such materials and process of treating such surfaces with the etching composition

The present invention relates to a method for characterizing defects on silicon surfaces, such as silicon wafers, a method for treating silicon surfaces with an etching solution, and an etching solution to be employed in the treating and defect characterization of such silicon wafer surfaces.

Methods for characterizing defects on silicon surfaces and etching composition and treatment process therefor

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Karlstein, Germany

Jochen Maehliss