Ams Ag

Austriamicrosystems Ag

Ams International Ag

Technische Universitat Graz

Austria Mikro Systeme International Aktiengesellschaft

Jochen Kraft

Franz Schrank

Martin Schrems

Jens Hofrichter

Georg Röhrer

Colin Steele

Jordi Teva

Hubert Enichlmair

Günther Koppitsch

Georg Parteder

Gerald Meinhardt

Bernhard Löffler

Raffaele Coppeta

Rainer Minixhofer

Joerg Siegert

Sara Carniello

Bernhard Loeffler

Karl Rohracher

Anderson Pires Singulani

Georg Roehrer

Andreas Fitzi

Cathal Cassidy

Jörg Siegert

Bernhard Stering

Anderson Singulani

Thomas Troxler

Ingrid Jonak-Auer

Stefan Jessenig

Ewald Wachmann

Ewald Stueckler

Victor Sidorov

Ewald Stückler

Martin Sagmeister

Herbert Truppe

Fernando Jesus Castano Sanchez

Goran Stojanovic

Paul Maierhofer

Martin Schatzmayr

Bernard Löffler

Michael Beutl

Rainer Holzhaider

Jean Francois Seurin

Fernando Castano

Catalin Lazar

The particle sensor device comprises a substrate, a photodetector, a dielectric on or above the substrate, a source of electromagnetic radiation, and a through-substrate via in the substrate. The through-substrate via is exposed to the environment, in particular to ambient air. A waveguide is arranged in or above the dielectric so that the electromagnetic radiation emitted by the source of electromagnetic radiation is coupled into a portion of the waveguide. A further portion of the waveguide is opposite the photodetector, so that said portions of the waveguide are on different sides of the through-substrate via, and the waveguide traverses the through-substrate via.

Particle density sensor using evanescent wave of waveguide

The chemical sensing device comprises a substrate of semiconductor material, integrated circuit components and a photodetector formed in the substrate, a dielectric on the substrate, a wiring in the dielectric, and a source of electromagnetic radiation, a waveguide and a fluorescent sensor layer arranged in or above the dielectric. A portion of the waveguide is arranged to allow the electromagnetic radiation emitted by the source of electromagnetic radiation to be coupled into the waveguide. A further portion of the waveguide is arranged between the photodetector and the fluorescent sensor layer.

Chemical sensing device using fluorescent sensing material

A semiconductor device includes a semiconductor body, an electrically conductive via which extends through at least a part of the semiconductor body, and where the via has a top side and a bottom side that faces away from the top side, an electrically conductive etch-stop layer arranged at the bottom side of the via in a plane which is parallel to a lateral direction, where the lateral direction is perpendicular to a vertical direction given by the main axis of extension of the via, and at least one electrically conductive contact layer at the bottom side of the via in a plane which is parallel to the lateral direction. The etch-stop layer is arranged between the electrically conductive via and the contact layer in the vertical direction, the lateral extent in the lateral direction of the etch-stop layer amounts to at least 2.5 times the lateral extent of the via in the lateral direction, and the lateral extent of the contact layer is smaller than the lateral extent of the via or the lateral extent of the contact layer amounts to at least 2.5 times the lateral extent of the via.

Semiconductor device with through-substrate via

A method for manufacturing a semiconductor device is provided. The method comprises the steps of providing a semiconductor body, forming a trench in the semiconductor body in a vertical direction which is perpendicular to the main plane of extension of the semiconductor body, and coating inner walls of the trench with an isolation layer. The method further comprises the steps of coating the isolation layer at the inner walls with a metallization layer, coating a top side of the semiconductor body, at which the trench is formed, at least partially with an electrically conductive contact layer, where the contact layer is electrically connected with the metallization layer, coating the top side of the semiconductor body at least partially and the trench with a capping layer, and forming a contact pad at the top side of the semiconductor body by removing the contact layer and the capping layer at least partially. Furthermore, a semiconductor device is provided.

Method for manufacturing a semiconductor device and semiconductor device

A semiconductor device comprises a semiconductor body and an electrically conductive via which extends through at least a part of the semiconductor body, where the via has a lateral size which is given in a first lateral direction that is perpendicular to a vertical direction given by the main axis of extension of the via and where the via has a top side and a bottom side that faces away from the top side. The semiconductor device further comprises an electrically conductive etch-stop layer arranged at the bottom side of the via in a plane which is parallel to the first lateral direction, and at least one electrically conductive contact layer at the bottom side of the via in a plane which is parallel to the first lateral direction. The lateral extent in the first lateral direction of the etch-stop layer is larger than the lateral size of the via and the lateral extent in the first lateral direction of the contact layer is smaller than the lateral size of the via. Furthermore, the etch-stop layer is arranged between the electrically conductive via and the contact layer in the vertical direction.

Crack-resistant semiconductor devices

A semiconductor device has a semiconductor substrate and a first metallization stack arranged on the substrate. The substrate has and/or carries a plurality of electronic circuit elements. The first metallization stack has electrically insulating layers and at least one metallization layer. The semiconductor device further has a second metallization stack arranged on the first metallization stack and comprising further electrically insulating layers and an optical waveguide layer. The optical waveguide layer has at least one optical waveguide structure. Furthermore, one of the electrically insulating layers and one of the further electrically insulating layers are in direct contact with each other and form a pair of directly bonded layers.

Semiconductor device with photonic and electronic functionality and method for manufacturing a semiconductor device

A dielectric layer () is arranged on the main surface () of a semiconductor substrate (), and a passivation layer () is arranged on the dielectric layer. A metal layer () is embedded in the dielectric layer above an opening () in the substrate, and a metallization () is arranged in the opening. The metallization contacts the metal layer and forms a through-substrate via to a rear surface () of the substrate. A layer or layer sequence () comprising at least one further layer is arranged on the passivation layer above the opening. In this way the bottom of the through-substrate via is stabilized. A plug () may additionally be arranged in the opening without filling the opening.

Semiconductor device with through-substrate via and corresponding method of manufacture

The method of producing an interposer-chip-arrangement, comprises providing an interposer () with an integrated circuit (), arranging a dielectric layer () with metal layers embedded in the dielectric layer above a main surface () of the interposer, connecting the integrated circuit with at least one of the metal layers, forming an interconnection () through the interposer, the interconnection contacting one of the metal layers, arranging a further dielectric layer () above a further main surface () of the interposer opposite the main surface and arranging a further metal layer in or on the further dielectric layer, the further metal layer being connected with the interconnection, arranging a chip provided with at least one contact pad at the main surface or at the further main surface, and electrically conductively connecting the contact pad with the interconnection.

Method of producing an interposer-chip-arrangement for dense packaging of chips

The sensor chip stack comprises a sensor substrate of a semiconductor material including a sensor, a chip fastened to the sensor substrate, the chip including an integrated circuit, electric interconnections between the sensor substrate and the chip, electric terminals of the chip, the chip being arranged between the electric terminals and the sensor substrate, and a molding material arranged adjacent to the chip, the electric terminals of the chip being free from the molding material.

Sensor chip stack and method of producing a sensor chip stack

The method comprises providing a semiconductor substrate, which has a main surface and an opposite further main surface, arranging a contact pad above the further main surface, forming a through-substrate via from the main surface to the further main surface at a distance from the contact pad and, by the same method step together with the through-substrate via, forming a further through-substrate via above the contact pad, arranging a hollow metal via layer in the through-substrate via and, by the same method step together with the metal via layer, arranging a further metal via layer in the further through-substrate via, the further metal via layer contacting the contact pad, and removing a bottom portion of the metal via layer to form an optical via laterally surrounded by the metal via layer.

Semiconductor device with optical and electrical vias

The interposer-chip-arrangement comprises an interposer (), metal layers arranged above a main surface (), a further metal layer arranged above a further main surface () opposite the main surface, an electrically conductive interconnection () through the interposer, the interconnection connecting one of the metal layers and the further metal layer, a chip () arranged at the main surface or at the further main surface, the chip having a contact pad (), which is electrically conductively connected with the interconnection, a dielectric layer () arranged above the main surface with the metal layers embedded in the dielectric layer, a further dielectric layer () arranged above the further main surface with the further metal layer embedded in the further dielectric layer, and an integrated circuit () in the interposer, the integrated circuit being connected with at least one of the metal layers ().

Interposer-chip-arrangement for dense packaging of chips

A wiring () comprising electrical conductors () is formed in a dielectric layer () on or above a semiconductor substrate (), an opening is formed in the dielectric layer to uncover a contact pad (), which is formed by one of the conductors, and a further opening is formed in the dielectric layer to uncover an area of a further conductor (), separate from the contact pad. The further opening is filled with an electrically conductive material (), and the dielectric layer is thinned from a side opposite the substrate, so that the electrically conductive material protrudes from the dielectric layer.

Method of producing a semiconductor device with protruding contacts

The semiconductor device comprises a substrate () of semiconductor material, a dielectric layer () above the substrate, a waveguide () arranged in the dielectric layer, and a mirror region () arranged on a surface of a mirror support () integrated on the substrate. A mirror is thus formed facing the waveguide. The surface of the mirror support and hence the mirror are inclined with respect to the waveguide.

Semiconductor device with integrated mirror and method of producing a semiconductor device with integrated mirror

A cutout (), which penetrates the semiconductor body, is present in the semiconductor body (). A conductor layer (), which is electrically conductively connected to a metal plane () on or over the semiconductor body, screens the semiconductor body electrically from the cutout. The conductor layer can be metal, optionally with a barrier layer (), or a doped region of the semiconductor body.

Method for producing a semiconductor device comprising a conductor layer in the semiconductor body and semiconductor body

The semiconductor device comprises a substrate () of semiconductor material, a contact hole () reaching from a surface () into the substrate, and a contact metallization () arranged in the contact hole, so that the contact metallization forms an internal substrate contact () on the semiconductor material at least in a bottom area () of the contact hole.

Semiconductor device with internal substrate contact and method of production

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Oberaich, Austria

Jochen Kraft