Siemens Aktiengesellschaft

Infineon Technologies Ag

Siemens Aktiengesell Schaft

Osram Opto Semiconductors Gmbh

Jochen Heinen

Markus-Christian Amann

Franz Kappeler

Christian Hanke

Gerhard Winzer

Hans F Mahlein

Wolfgang Thulke

Bernhard Stegmueller

Ulrich Wolff

Heinz Westermeier

Manfred Plihal

Reinhard Marz

Gerhard Franz

Friedrich Weidinger

Gerhard Baumann

Heinrich Schlotterer

Karl-Joachim Ebeling

A method for coupling a surface-oriented opto-electronic element, particularly, a VCSEL laser diode, an LED, or a photodiode, with an optical fiber and an opto-electronic element for carrying out such a method, the opto-electronic element having a rotationally symmetrical protruding structure disposed symmetrically with respect to the optically active zone of the opto-electronic element, includes the steps of wetting the butt of the fiber and/or the protruding structure of the opto-electronic element with a transparent adhesive, moving the opto-electronic element and/or the fiber toward each other such that a substantially frictionless movement of at least one of the element and fiber can occur, waiting for a self-centering of the fiber and the protruding portion; and waiting for or bringing about a hardening of the adhesive for purposes of fixing the now-centered configuration between the fiber and the protruding portion.

Method for coupling a surface-oriented opto-electronic element with an optical fiber and opto-electronic element for carrying out such a method

A semiconductor light source with low photon absorption is not only structurally simple, but is also easy to produce. The light source is formed of a layer stack with a total thickness of 50 .mu.m which is secured at a separate carrier body and connected to contacts of the carrier body with this thickness alone i.e. without intimate connection to a substrate, by a separate connecting structure. The diode is advantageous for realizing IREDs and LEDs of high optical performance.

Semiconductor light source formed of layer stack with total thickness of

A bidirectional optical transmission and reception module includes a substrate having one surface provided with waveguides and mirrors for deflecting radiation into the substrate and on an opposite surface of the substrate is provided a laser diode serving as a transmitter, a photodiode as a receiver, and a terminal for an optical fiber, each opposite the mirrors on the waveguides. Optical connections between the optical fiber and the laser diode and between the optical fiber and the photodiode are carried out through the substrate and via the waveguides. An optical coupler is also provided between the waveguides.

Bidirectional optical transmission and reception module

An optoelectronic device for outfeed and infeed of radiation into and out of a waveguide having the waveguide disposed on a substrate and provided with a mirror for reflecting the light through the substrate. The device includes at least a plano-convex lens being integrated on a surface of the substrate lying opposite the waveguide. In one embodiment, a second substrate is secured on the first substrate and one of the substrates has a recess for receiving the lens and the second substrate can have a recess aligned with the lens for receiving an end of an optical fiber.

Optoelectronic device for outfeed and infeed of radiation

Optoelectronic circuit in a semiconductor component having a branching waveguide. A respective optical amplifier constructed as a diode is integrated in each branch of this waveguide and the doping of the materials surrounding the active layer of these diodes is selected such that each diode can also be separately operated as a photodetector without transverse currents arising between the diodes.

Optoelectronic circuit with diodes and waveguides

A tunable semiconductor laser which is formed on a substrate 2 which has a first contact 14 on one surface and a third contact 16 on the opposite surface so as to supply the operating current which is laterally limited to a laser-active stripe through a barrier layer 4 l and including a second contact 15 on a ridge waveguide 11, 12, 13 so as to inject charge carriers into a tuning layer 9 mounted adjacent an active layer 6 and which is separated from the active layer by highly doped central layer 10 so as to allow tuning of the laser.

Tunable semiconductor laser

Electrically tunable semiconductor laser with ridge waveguide. A semiconductor laser with MCRW structure has an intermediate layer grown on an active layer, a stripe-shaped tuning layer that is flanked by a first lateral region having a first tuning contact and by a second lateral region having a second tuning contact, a cover layer and a contact layer. The supply of power occurs via a substrate contact and via a ridge contact and the laser is tunable with currents injected into the tuning layer via the tuning contacts.

Electrically tunable semiconductor laser with ridge waveguide

A laser transmitter arrangement includes a plurality of laterally coupled semiconductor lasers along with drive components integrated on a single semiconductor body. The drive components include drop resistors, an inductance element, a capacitance element and are all applied to an insulating layer on the surface of the semiconductor body. The resistors are formed by interconnects, while the inductance element is a spiral interconnect and the capacitance element is formed by interconnects lying over one another with an intervening dielectric material. Electrical connection from contact surfaces of the semiconductor lasers to the drive components is provided by the interconnects. The semiconductor body also contains external contacting surfaces for a DC source and for a high frequency source.

Laser transmitter arrangement

A light-emitting diode has a lens secured in self-adjusted fashion to a mesa surface of a semiconductor body by means of adhesive. The mesa surface is substantially perpendicular and centered with an emission axis of the light-emitting diode. Preferably, the lens is spherical and the mesa surface has a diameter comparable to or smaller than a diameter of the lens.

Light-emitting-diode (LED) with spherical lens

A method for generating a strip laser in a buried hetero-structure composed of layers, wherein a raised strip is etched out of the layer structure and the strip is laterally etched with an erosion melt. The lateral edges of the laser active layer are protected by leaving them covered with a portion of the layer dissolved out by the erosion melt. The deposits thus remaining are used to initiate the generation of an epitaxial layer which extends laterally from the laser-active layer.

Method for generating a strip waveguide

A mechanism for self-adjusting positioning of a glass fiber to a semiconductor laser chip includes an adjustment member with a groove into which a mesa ridge of the laser chip is secured and into which the glass fiber is placed.

Mechanism for self-adjusting positioning of a semiconductor laser

A monolithically integrated WDM demultiplex module has a film wave guide of InGaAsP fashioned on a substrate, a photodiode of InGaAs being applied to the film wave guide. The photodiode is optically coupled to the film wave guide by a leakage coupling. A wavelength selection element in the form of a grating is provided in the surface of the film wave guide. The module can be manufactured with a single epitaxial step. Structures for increasing the crosstalk attenuation of the module and for a better coupling-in of radiation into the module are provided.

Monolithically integrated WDM demultiplex module and method of

A semiconductor laser array having laser active strips optically coupled to one another, wherein only every second laser active strip emits laser energy so that one main emission lobe appears.

Semiconductor laser array with focused emission

An arrangement of two coupled laser diodes comprises first and second two-layer structures, each structure having a strip-shaped laser-active zone, and a middle layer. The first and second two-layer structures are symmetrically constructed relative to the middle layer at opposite sides thereof and directly across from each other so that the strip-shaped laser-active zones in each of the two-layer structures are positioned at a defined spacing directly across from each other and in symmetrical manner with respect to the middle layer. The middle layer is epitaxially deposited with a precisely dimensioned thickness relative to the two coupled laser diodes being employed.

Growing community of inventors

Haar, Germany

Jochen Heinen