Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Solarworld Innovations Gmbh

Solarworld Industries Sachsen Gmbh

Deutsche Solar Gmbh

Jochen Friedrich

Marc Dietrich

Stephan Hussy

Bernhard Birkmann

Elke Meissner

Christian Reimann

Andreas Krause

Bernhard Freudenberg

Kaspars Dadzis

Georg Müller

Rainer Apelt

Matthias Trempa

Doreen Nauert

Bianca Gründig-Wendrock

Sara Grützner

Stephan Müller

Lucas Becker

Kevin Schuck

Device for producing silicon blocks for photovoltaic applications, comprising a container for receiving a silicon melt with a base wall and at least one side wall, means for reducing the diffusion of impurities from at least one of the walls of the container into the silicon melt, wherein the means for reducing the diffusion of impurities comprise at least one covering element for the at least partial covering of at least one of the walls of the container.

Device and method for producing silicon blocks

The invention relates to a device and a method for producing crystalline bodies by directional solidification. The device comprises a melting furnace () having a heating chamber () in which at least one supporting surface () for a crucible () and at least one gas purging device arranged above the supporting surface () and having a gas outlet facing the supporting surface () are defined. An embodiment of the device is characterized in that the gas outlet is defined by one or more openings in a lower plunger surface of a plunger-shaped element () which has a geometry adapted to the inner shape of the crucible (), said shape allowing an at least partial insertion of the plunger-shaped body () into the crucible (). The gas purging device and/or the supporting surface () comprise an adjusting mechanism or are designed to be adjustable in such a manner that they allow an adjustment of a perpendicular distance between the supporting surface () and the plunger-shaped body (). The device and the corresponding method allow carbon- and oxygen-containing materials to be discharged from the melt more efficiently and in a controlled manner. The device and the method thus allow&#x2014;within certain limits&#x2014;a specific adjustment of the carbon and oxygen content of the crystalline bodies.

Device and method for producing crystalline bodies by directional solidification

The present invention relates to a method for the production of crystal layers or bulk crystals of group III nitride or of mixtures of different group III nitrides by means of precipitation, at a first temperature Tin a first temperature range, from a group-III containing fused metal on a group-III-nitride crystal seed placed in the fused metal or on a foreign substrate placed in the fused metal, with the admixture of nitrogen in the fused metal at a pressure P. With the method a solvent additive is added to the fused metal which increases the conversion rate of group III metal to group III nitride in the fused metal. The fused metal runs through at least one temperature cycle with a first and a second process phase in which cycle the fused metal cools after the first process phase from the first temperature to a second temperature Tbelow the first temperature range and at the end of the second process phase is heated from the second temperature back to a temperature within the first temperature range. The described method permits producing group III nitride crystal layers with a thickness of &#x3e;10 &#x3bc;m, respectively massive crystals with a diameter of &#x3e;10 mm at dislocation densities of &#x3c;10cmat temperatures below 1100&#xb0; C. and process pressures below 5&#xd7;10Pa.

Method for the production of group III nitride bulk crystals or crystal layers from fused metals

The present invention relates to a method for increasing the conversion of group III metal to group III nitride in a fused metal containing group III elements, with the introduction of nitrogen into the fused metal containing group III, at temperatures&#x2266;1100&#xb0; C. and at pressures of below 1&#xd7;10Pa, wherein a solvent adjunct is added to the fused metal containing group III elements, which is at least one element of the following elements C, Si, Ge, Fe, and/or at least one element of the rare earths, or an alloy or a compound of these elements, in particular their nitrides.

Method for increasing the conversion of group III metals to group III nitrides in a fused metal containing group III elements

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Eckental, Germany

Jochen Friedrich