Infineon Technologies Ag

Avago Technologies Fiber IP (singapore) Pte. Ltd

Infineon Technoloiges Ag

Jochen Dangelmaier

Horst Theuss

Rainer Markus Schaller

Klaus Elian

Stefan Paulus

Albert Auburger

Joachim Mahler

Reimund Engl

Cyrus Ghahremani

Francisco Javier Santos Rodriguez

Michael Bauer

Gottfried Beer

Manfred Mengel

Volker Strutz

Frank Hille

Heinrich Koerner

Mathias Vaupel

Antonio Vellei

Klaus Pressel

Johann Gatterbauer

Helmut Wietschorke

Bernd Stadler

Thomas Mueller

Rudolf Lehner

Bernd Betz

Werner Kanert

Michael Huettinger

Brigitte Ruehle

Andreas Allmeier

Kim Huat Hoa

Dietmar Lang

Stefan Kolb

Guenther Ruhl

Franz Jost

Alfred Haimerl

Matthias Eberl

Manfred Fries

Michael Weber

Uwe Schindler

Josef Hirtreiter

Simon Gassner

Jean Schmitt

Klaus Mueller

Hazrul Alang Abd Hamid

Udo Ausserlechner

Josef Hoeglauer

Juergen Hoegerl

Georg Meyer-Berg

Franz Michael Darrer

Frank Daeche

Henrik Ewe

Franz-Peter Kalz

Rainer Steiner

Jens Krause

Andreas Meckes

Thomas Lichtenegger

Donald Fowlkes

Tue Fatt David Wee

Martin Petz

Manfred Schindler

Matthias Rose

Henrik Hoyer

Stephan Auer

Alfred Gottlieb

Sebastian Beer

Sie Boo Chiang

Stefan Uwe Schindler

Dominik Kohl

Volker Guengerich

Mario Engl

Volker Geungerich

Frank Dāche

Günter Ehrler

Hazrul Aland Abd Hamid

A photoacoustic sensor includes a first MEMS device and a second MEMS device. The first MEMS device includes a first MEMS component including an optical emitter, and a first optically transparent cover wafer-bonded to the first MEMS component, wherein the first MEMS component and the first optically transparent cover form a first closed cavity. The second MEMS device includes a second MEMS component including a pressure detector, and a second optically transparent cover wafer-bonded to the second MEMS component, wherein the second MEMS component and the second optically transparent cover form a second closed cavity.

Photoacoustic sensors and MEMS devices

A current sensor includes a current rail and a magnetic field sensor. The magnetic field sensor is configured to measure a magnetic field induced by a current flowing through the current rail. A first insulation layer and a second insulation layer are arranged between the current rail and the magnetic field sensor. An interface between the first insulation layer and the second insulation layer is free of a contact with the current rail and/or is free of a contact with the magnetic field sensor. A portion of the current rail extends into the second insulation layer and the portion of the current rail is encapsulated by the second insulation layer.

Current sensor that includes a current rail and a magnetic field sensor with galvanic isolation

An ultrasonic touch sensor is proposed for attachment to a casing, having a semiconductor chip including a substrate side and a component side, the semiconductor chip including an ultrasonic transducer element and the ultrasonic transducer element being arranged on the component side, having an acoustic coupling medium covering the semiconductor chip at least in the region of the ultrasonic transducer element, having electrical contact elements for controlling the ultrasonic transducer element, and the electrical contact elements being arranged on the component side of the semiconductor chip.

Ultrasonic touch sensor

A method of forming an electrical contact is provided. The method may include depositing, by atomic layer deposition, a passivation layer over at least a region of a metal surface, wherein the passivation layer may include aluminum oxide, and electrically contacting the region of the metal surface with a metal contact structure, wherein the metal contact structure may include copper.

Chip package, method of forming a chip package and method of forming an electrical contact

A sensor package comprises a MEMS sensor chip, a cover arranged over a first main surface of the MEMS sensor chip, said cover being fabricated from a mold compound, and an electrical through contact extending through the cover and to electrically couple the sensor package to a circuit board arranged over the cover.

Microelectromechanical system (MEMS) sensor packages and methods for producing microelectromechanical system sensor packages having a plurality of MEMS sensor chips

What is proposed is a current sensor comprising a current rail and comprising a magnetic field sensor, wherein the magnetic field sensor is configured to measure a magnetic field induced by a current flowing through the current rail, wherein a first insulation layer and a second insulation layer are arranged between the current rail and the magnetic field sensor, wherein an interface between the first insulation layer and the second insulation layer is free of a contact with the current rail and/or is free of a contact with the magnetic field sensor.

Current sensor

A package is disclosed. In one example, the package comprises a carrier, an electronic component mounted on the carrier, and an encapsulant encapsulating at least part of the electronic component and only part of the carrier so that another exposed part of the carrier is exposed with regard to the encapsulant. The exposed part of the carrier comprises an electric connection structure and a corrosion protection structure. One of the electric connection structure and the corrosion protection structure is selectively formed on only a sub-portion of the other one of the electric connection structure and the corrosion protection structure outside of the encapsulant.

Package with selective corrosion protection of electric connection structure

A package comprising a carrier, an electronic component mounted on the carrier, and an identifier indicative of an origin of the package and being formed on and/or in the carrier is disclosed.

Package comprising identifier on and/or in carrier

A current sensor device may include a routable molded lead frame that includes a molded substrate. The current sensor device may include a conductor and a semiconductor chip mounted to the molded substrate. The semiconductor chip may include a magnetic field sensor that is galvanically isolated from the conductor by the molded substrate and is configured to sense a magnetic field created by current flowing through the conductor. The current sensor device may include one or more leads configured to output a signal generated by the semiconductor chip. The one or more leads may be galvanically isolated from the conductor by the molded substrate.

Current sensor device with a routable molded lead frame

A semiconductor device includes a die paddle, a plurality of electrically conductive leads extending away from the die paddle, and an adhesion promoter plating material selectively formed on the electrically conductive leads such that outer portions of the leads are covered by the adhesion promoter plating material, and interior portions of the leads that are disposed between the die paddle and the respective outer portions of each lead are substantially devoid of the adhesion promoter plating material.

Direct selective adhesion promotor plating

A method of forming an electrical contact and a method of forming a chip package are provided. The methods may include arranging a metal contact structure including a non-noble metal and electrically contacting the chip, arranging a packaging material, and a protective layer including or essentially consisting of a portion formed at an interface between a portion of the metal contact structure and the packaging material, wherein the protective layer may include a noble metal, wherein the portion of the protective layer may include a plurality of regions free from the noble metal, and wherein the regions free from the noble metal may provide an interface between the packaging material and the non-noble metal of the metal contact structure.

Method of forming an electrical contact and method of forming a chip package with a metal contact structure and protective layer

A semiconductor sensor device includes a substrate including a first main face and a second main face opposite the first main face, a semiconductor element including a sensing region, the semiconductor element on the first main face of the substrate and being electrically coupled to the substrate, a lid on the first main face of the substrate and forming a cavity, wherein the semiconductor element is in the cavity, and a vapor deposited dielectric coating covering the semiconductor element and the first main face of the substrate, the vapor deposited dielectric coating having an opening over the sensing region, wherein the second main face of the substrate is at least partially free of the vapor deposited dielectric layer.

Semiconductor sensor device and method for fabricating the same

Examples provided herein are associated with a molded lead frame of a sensor package. An example sensor package may include a molded lead frame that includes an opening in the molded lead frame, wherein the opening extends from a mount-side of the molded lead frame to a chip-side of the molded lead frame, wherein the chip-side of the molded lead frame is opposite the mount-side; and a sensor mounted to the chip-side of the molded lead frame.

Molded lead frame sensor package

In various embodiments, a chip package is provided. The chip package may include a chip, a metal contact structure including a non-noble metal and electrically contacting the chip, a packaging material, and a protective layer including or essentially consisting of a portion formed at an interface between a portion of the metal contact structure and the packaging material, wherein the protective layer may include a noble metal, wherein the portion of the protective layer may include a plurality of regions free from the noble metal, and wherein the regions free from the noble metal may provide an interface between the packaging material and the non-noble metal of the metal contact structure.

Chip package and method of forming a chip package with a metal contact structure and protective layer, and method of forming an electrical contact

Growing community of inventors

Beratzhausen, Germany

Jochen Dangelmaier