International Business Machines Corporation

Infineon Technologies Ag

Other

Infineon Technologies North America Corp.

Siemens Aktiengesellschaft

Robert Boschgmbh

Kabushiki Kaisha Toshiba

Qimonda Ag

Siemens Aktiengesell Schaft

Jochen C Beintner

Yujun Li

Ulrike Gruening

Ramachandra Divakaruni

Rama Divakaruni

Gary Bela Bronner

Jack Allan Mandelman

Andreas Knorr

Bruce Bennett Doris

Huilong Zhu

Helmut Horst Tews

Rajarao Jammy

Byeong Yeol Kim

Stephan Kudelka

Kenneth T Settlemyer, Jr

Edward J Nowak

Carl John Radens

Dureseti Chidambarrao

Ying Di Zhang

Naim Moumen

Zvonimir Gabric

Oswald Spindler

Peter Thwaite

Porshia Shane Wrschka

Hans-Oliver Joachim

Oleg Gluschenkov

Michael Patrick Chudzik

Rolf Weis

Richard Anthony Conti

Johnathan E Faltermeier

Philip Joseph Oldiges

Larry Alan Nesbit

Hiroyuki Akatsu

Scott David Halle

Xinlin Wang

Wolfgang Bergner

Johann Alsmeier

Rajesh Rengarajan

Rajeev Malik

Thomas Ludwig

Mihel Seitz

Alexander Michaelis

Dirk Tobben

Philip L Flaitz

Radhika Srinivasan

Carol J Heenan

Akira Sudo

Yoichi Takegawa

Gill Lee

Lars W Liebmann

Herbert Lei Ho

Laertis Economikos

Thomas W Dyer

Christoph Schelling

David M Dobuzinsky

Joseph Francis Shepard, Jr

Siddhartha Panda

Richard Fix

Michael Lester Wise

Jeffrey John Welser

Heiko Stahl

Gill Yong Lee

Lutz Mueller

Oliver Genz

Giuseppe La Rosa

Juergen Butz

Juergen Wittmann

Rene Hartke

Byeong Y Kim

Hirofumi Inoue

Ramachandra Divkaruni

Andreas Hartlieb

A micromechanical sensor is described that includes: a substrate; a first functional layer that is situated on the substrate; a second functional layer that is situated on the first functional layer and that includes movable micromechanical structures; a cavity in the substrate that is situated below the movable mechanical structures; and a vertical trench structure that surrounds the movable micromechanical structures of the second functional layer and extends into the substrate down to the cavity.

Micromechanical sensor that includes a stress decoupling structure

A polycrystalline material having low mechanical strain is provided. The polycrystalline material includes one or multiple layers of a first type and one or multiple layers of a second type. The layers of the first type and the layers of the second type each include at least one polycrystalline material component. The layers of the first type have a smaller average crystal grain size than the layers of the second type, a layer of the first type and a layer of the second type being situated, at least in part, one above the other in an alternating sequence, and it being the case for the transition between the layers of the first type and the layers of the second type to be abrupt or continuous.

Polycrystalline material having low mechanical strain; method for producing a polycrystalline material

A method for producing an integrated micromechanical fluid sensor component includes forming a first wafer with a first Bragg reflector and with a light-emitting device on a first substrate. The light-emitting device is configured to emit light rays in an emission direction from a surface of the light-emitting device facing away from the first Bragg reflector. The method further includes forming a second wafer with a second Bragg reflector and with a photodiode on a second substrate. The photodiode is arranged on a surface of the second Bragg reflector facing towards the second substrate. The method also includes bonding or gluing the first wafer to the second wafer such that there is formed a cavity into which a fluid is introduced and through which the light rays can pass. The method further includes separating the fluid sensor component from the first and the second wafer.

Method for producing an integrated micromechanical fluid sensor component, integrated micromechanical fluid sensor component and method for detecting a fluid by means of an integrated micromechanical fluid sensor component

A micromechanical structure, in particular a micromechanical electric field meter as a thunderstorm warning device, for detection of an electric field, comprising a substrate having a principal extension plane, a first electrode, a second electrode, and a drive assemblage for producing a relative motion of the second electrode with respect to the first electrode into an overlapping position, the first electrode and the second electrode being, in the overlapping position, disposed above one another in a projection direction extending perpendicularly to the principal extension plane of the substrate, wherein the second electrode has a defined potential for shielding the first electrode with respect to the electric field in the overlapping position.

Micromechanical electric field meter as a thunderstorm warning device

A method, structure and alignment procedure, for forming a finFET. The method including, defining a first fin of the finFET with a first mask and defining a second fin of the finFET with a second mask. The structure including integral first and second fins of single-crystal semiconductor material and longitudinal axes of the first and second fins aligned in the same crystal direction but offset from each other. The alignment procedure including simultaneously aligning alignment marks on a gate mask to alignment targets formed separately by a first masked used to define the first fin and a second mask used to define the second fin.

Dense chevron finFET and method of manufacturing same

A method of fabricating a plurality of FinFETs on a semiconductor substrate in which the gate width of each individual FinFET is defined utilizing only a single etching process, instead of two or more, is provided. The inventive method results in improved gate width control and less variation of the gate width of each individual gate across the entire surface of the substrate. The inventive method achieves the above by utilizing a modified sidewall image transfer (SIT) process in which an insulating spacer that is later replaced by a gate conductor is employed and a high-density bottom up oxide fill is used to isolate the gate from the substrate.

Process for fabrication of FINFETs

A method is provided of making a gated semiconductor device. Such method can include patterning a single-crystal semiconductor region of a substrate to extend in a lateral direction parallel to a major surface of a substrate and to extend in a direction at least substantially vertical and at least substantially perpendicular to the major surface, the semiconductor region having a first side and a second side opposite, e.g., remote from the first side. A first gate may be formed overlying the first side, the first gate having a first gate length in the lateral direction. A second gate may be formed overlying the second side, the second gate having a second gate length in the lateral direction which is different from the first gate length. In one embodiment, the second gate length may be shorter than the first gate length. In one embodiment, the first gate may consist essentially of polycrystalline silicon germanium and the second gate may consist essentially of polysilicon.

Method of making double-gated self-aligned finFET having gates of different lengths

A semiconductor body has a first portion, a second portion, and an active area located between the first portion and the second portion. The first portion and the second portion are a shallow trench isolation region having an exposed surface extending above the surface of the active area. A first ion implantation is performed at a first angle such that a first shaded area defined by the exposed surface of the first portion and the first angle is exposed to fewer ions than a first unshaded area. A second ion implantation is performed at a second angle such that a second shaded area defined by the exposed surface of the second portion and the second angle is exposed to fewer ions than a second unshaded area.

Method of implanting using a shadow effect

The present invention provides a strained/SGOI structure that includes an active device region of a relaxed SiGe layer, a strained Si layer located atop the relaxed SiGe layer, a raised source/drain region located atop a portion of the strained Si layer, and a stack comprising at least a gate dielectric and a gate polySi located on another portion of the strained Si layer; and a raised trench oxide region surrounding the active device region. The present invention also provides a method of forming such a structure. In the inventive method, the gate dielectric is formed prior to trench isolation formation thereby avoiding many of the problems associated with prior art processes in which the trench oxide is formed prior to gate dielectric formation.

Raised STI process for multiple gate ox and sidewall protection on strained Si/SGOI sructure with elevated source/drain

A method of fabrication and a field effect device structure are presented that reduce source/drain capacitance and allow for device body contact. A Si based material pedestal is produced, the top surface and the sidewalls of which are oriented in a way to be substantially parallel with selected crystallographic planes of the pedestal and of a supporting member. The pedestal is wet etched with an anisotropic solution containing ammonium hydroxide. The sidewalls of the pedestal become faceted forming a segment in the pedestal with a reduced cross section. The dopant concentration in the reduced cross section segment is chosen to be sufficiently high for it to provide for electrical continuity through the pedestal.

Device fabrication by anisotropic wet etch

A new class of high-density, vertical Fin-FET devices that exhibit low contact resistance is described. These vertical Fin-FET devices have vertical silicon 'fins' (A) that act as the transistor body. Doped source and drain regions (A,A) are formed at the bottoms and tops, respectively, of the fins (A). Gates (A,B) are formed along sidewalls of the fins. Current flows vertically through the fins (A) between the source and drain regions (A,A) when an appropriate bias is applied to the gates (A,B). An integrated process for forming pFET, nFET, multi-fin, single-fin, multi-gate and double-gate vertical Fin-FETs simultaneously is described.

Vertical Fin-FET MOS devices

A method is presented for fabricating a non-planar field effect device. The method includes the production of a Si based material Fin structure that has a top surface substantially in parallel with a {111} crystallographic plane of the Si Fin structure, and the etching of the Si Fin structure with a solution which contains ammonium hydroxide (NHOH). In this manner, due to differing etch rates in ammonium hydroxide of various Si based material crystallographic planes, the corners on the Fin structure become clipped, and angles between the horizontal and vertical planes of the Fin structure increase. A FinFET device with clipped, or rounded, corners is then fabricated to completion. In a typical embodiment the FinFET device is selected to be a silicon-on-insulator (SOI) device.

Corner clipping for field effect devices

Process for fabrication of FinFETs

A gated semiconductor device is provided, in which the body has a first dimension extending in a lateral direction parallel to a major surface of a substrate, and second dimension extending in a direction at least substantially vertical and at least substantially perpendicular to the major surface, the body having a first side and a second side opposite the first side. The gated semiconductor device includes a first gate overlying the first side, and having a first gate length in the lateral direction. The gated semiconductor device further includes a second gate overlying the second side, the second gate having a second gate length in the lateral direction which is different from, and preferably shorter than the first gate length. In one embodiment, the first gate and the second gate being electrically isolated from each other. In another embodiment the first gate consists essentially of polycrystalline silicon germanium and the second gate consists essentially of polysilicon.

Structure and method of making double-gated self-aligned finFET having gates of different lengths

Growing community of inventors

Wappingers Falls, NY, United States of America

Jochen C Beintner