Applied Materials, Inc.

Job George Konnoth Joseph

Rupankar Choudhury

Jennifer Y Sun

Andrew Nguyen

Kallol Bera

Amit Kumar Bansal

Jay D Pinson, Ii

Ren-Guan Duan

Canfeng Lai

Diwakar N Kedlaya

Venkata Sharat Chandra Parimi

Kaushik Comandoor Alayavalli

Badri N Ramamurthi

Fang Ruan

Akshay Dhanakshirur

Sathya Swaroop Ganta

Rajaram Narayanan

Gopu Krishna

Sherry L Mings

Anil Kumar Kalal

Abhishek Pandey

Syam Sundeep Boosa

A plasma chamber includes a chamber body having a processing region therewithin, a liner disposed on the chamber body, the liner surrounding the processing region, a substrate support disposed within the liner, a magnet assembly comprising a plurality of magnets disposed around the liner, and a magnetic-material shield disposed around the liner, the magnetic-material shield encapsulating the processing region near the substrate support.

Magnetic-material shield around plasma chambers near pedestal

A semiconductor processing system includes a remote plasma source (RPS), a faceplate, and an output manifold positioned between the RPS and the faceplate. The output manifold is characterized by a plurality of purge outlets that are fluidly coupled with a purge gas source and a plurality of deposition outlets that are fluidly coupled with a deposition gas source. A delivery tube extends between and fluidly couples the RPS and the faceplate. The delivery tube is characterized by a generally cylindrical sidewall that defines an upper plurality of apertures that are arranged in a radial pattern. Each of the upper apertures is fluidly coupled with one of the purge outlets. The generally cylindrical sidewall defines a lower plurality of apertures that are arranged in a radial pattern and below the upper plurality of apertures. Each of the lower apertures is fluidly coupled with one of the deposition outlets.

Gas mixer to enable RPS purging

Exemplary support assemblies may include an electrostatic chuck body defining a support surface that defines a substrate seat. The assemblies may include a support stem coupled with the chuck body. The assemblies may include a heater embedded within the chuck body. The assemblies may include a first bipolar electrode embedded within the electrostatic chuck body between the heater and support surface. The assemblies may include a second bipolar electrode embedded within the chuck body between the heater and support surface. The assemblies may include at least one inner capacitive sensor embedded within the electrostatic chuck body at a position proximate a center of the substrate seat. The assemblies may include at least one outer capacitive sensor embedded within the electrostatic chuck body at a position proximate a peripheral edge of the substrate seat.

Capacitive method of detecting wafer chucking and de-chucking

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Kerala, India

Job George Konnoth Joseph