Hemlock Semiconductor Corporation

Joaquin Enrique Luna

Scott Allen Wheelock

Lydia L Hwang

Michael Bourbina

The present invention is an improved susceptor for a float-zone apparatus for the float-zone processing of silicon elements. The susceptor is of a cylindrical design which allows the susceptor to be positioned around a free end of a silicon element to heat the free end of the silicon element to facilitate inductive coupling of the free end of the silicon element with an RF induction coil heater. In a preferred embodiment of the present invention, the susceptor is formed from tantalum.

Susceptor for float-zone apparatus

The present invention is a method for analyzing irregular-shaped chunked silicon for low-level contaminates. The method comprises selecting a zonable-chunk of silicon and float-zoning the chunk of silicon to effect a distribution of surface contaminates into the bulk of a monocrystal of silicon. The float-zoned monocrystalline silicon is then processed into a wafer suitable for analysis for low-level contaminates.

Growing community of inventors

Saginaw, MI, United States of America

Joaquin Enrique Luna