Globalfoundries Singapore Pte. Ltd.

Vanguard International Semiconductor Singapore Pte. Ltd.

Vanguard International Semiconductor Corporation

Vanguard Iniernational Semiconductor Singapore Pte. Ltd.

Joan Josep Giner De Haro

You Qian

Rakesh Kumar

Humberto Campanella Pineda

Qizhi Liu

Vibhor Jain

Humberto Campanella-Pineda

Jia Jie Xia

You Pak-Chum Qian

A PMUT includes a substrate, a stopper, and a multi-layered structure, where the substrate includes a corner, and a cavity is disposed in the substrate. The stopper is in contact with the corner of the substrate and the cavity. The multi-layered structure is disposed over the cavity and attached to the stopper and the multi-layered structure includes at least one through hole in contact with the cavity.

Piezoelectric micromachined ultrasonic transducer and method of fabricating the same

A method of forming a microphone device includes: forming a through-hole in a substrate wafer; providing a second wafer; bonding the second wafer to the substrate wafer; and forming a top electrode over a first surface of a single-crystal piezoelectric film of the second wafer. The second wafer may include the single-crystal piezoelectric film. The single-crystal piezoelectric film may have a first surface and an opposing second surface. The second wafer may further include a bottom electrode arranged adjacent to the second surface, and a support member over the single-crystal piezoelectric film. The through-hole in substrate wafer may be at least substantially aligned with at least one of the top electrode and the bottom electrode.

Microphone device with single crystal piezoelectric film and method of forming the same

A semiconductor device may include: a substrate wafer, a bonding layer at least partially covering a front surface of the substrate wafer, a plurality of silicon pillars bonded to the front surface of the substrate wafer by the bonding layer, a single-crystal piezoelectric film having a first surface and an opposing second surface, a top electrode arranged adjacent to the first surface of the single-crystal piezoelectric film, and a bottom electrode arranged adjacent to the second surface of the single-crystal piezoelectric film. The single-crystal piezoelectric film may be supported by the plurality of silicon pillars such that the second surface of the piezoelectric film and the front surface of the substrate wafer enclose a cavity therebetween.

Semiconductor device and method of forming a semiconductor device

A microphone device may include: a substrate wafer, a support member bonded to a front surface of the substrate wafer, a single-crystal piezoelectric film provided over the support member, a top electrode and a bottom electrode. The single-crystal piezoelectric film may have a first surface and an opposing second surface. The top electrode may be arranged adjacent to the first surface of the single-crystal piezoelectric film. The bottom electrode may be arranged adjacent to the second surface of the single-crystal piezoelectric film. The substrate wafer may have a through-hole formed therein. The through-hole of the substrate wafer may be at least substantially aligned with at least one of the top electrode and the bottom electrode.

A MEMS device may include a first electrode region; a first piezoelectric layer arranged over the first electrode region; a second electrode region arranged over the first piezoelectric layer; a second piezoelectric layer arranged over the first piezoelectric layer and the second electrode region; a third electrode region arranged over the second piezoelectric layer; a first input port coupled to the first electrode region and/or the second electrode region for providing a first electrical signal to the first piezoelectric layer to generate a first vibration in the first piezoelectric layer; a second input port coupled to the second electrode region and/or the third electrode region for providing a second electrical signal to the second piezoelectric layer to generate a second vibration in the second piezoelectric layer; and an output port configured to receive an output signal including a superposition of the first vibration and the second vibration.

Microelectromechanical systems, devices, and methods for fabricating a microelectromechanical systems device, and methods for generating a plurality of frequencies

Structures for transistor-based sensors and related fabrication methods. A layer stack is formed that includes a semiconductor layer and a cavity. A transistor is formed that has a gate electrode over the layer stack, and an interconnect structure is formed over the layer stack and the transistor. First and second openings are formed that extend through the metallization levels of the interconnect structure and the semiconductor layer to the cavity. The first opening defines a fluid inlet coupled to the cavity, and the second opening defines a fluid outlet coupled to the cavity.

Sensors with a front-end-of-line solution-receiving cavity

A resonator device may include a stacked first resonator and second resonator. The first resonator may be configured to resonate at a first operating frequency, and the second resonator may be configured to resonate at a second operating frequency different from the first operating frequency. The first resonator may include a first electrode and a first active layer arranged over the first electrode. The second resonator may include a second active layer arranged over the first active layer, and a second electrode arranged over the second active layer. The stacked first resonator and second resonator may be coupled to a reconfiguration switch for selectively operating at the first operating frequency or the second operating frequency. One of the first resonator and the second resonator is active upon selection by the reconfiguration switch, while the other resonator is inactive.

Reconfigurable resonator devices, methods of forming reconfigurable resonator devices, and operations thereof

Transistor-based sensors and fabrication methods for a transistor-based sensor. A semiconductor layer is arranged over a substrate, and an interconnect structure is arranged over the semiconductor layer and the substrate. The semiconductor layer includes first sections composed of a semiconductor material, second sections composed of the semiconductor material, and cavities. The first sections have an alternating arrangement with the second sections in a lateral direction. The semiconductor material of the first sections is polycrystalline, and the semiconductor material of the second sections is single-crystal. First and second openings each extend in a vertical direction through the metallization levels of the interconnect structure to the semiconductor layer or through the substrate to the semiconductor layer. The first opening defines a first fluid inlet coupled to the cavities, and the second opening defines a first fluid outlet coupled to the cavities.

Sensors based on a heterojunction bipolar transistor construction

A MEMS device including an active layer having a first surface and a second surface is provided. A first electrode and a second electrode, and at least one reconfigurable electrode segment are arranged over the first surface of the active layer. At least one reconfiguration layer is arranged over the second surface of the active layer. The at least one reconfigurable electrode segment and the at least one reconfiguration layer overlaps. One or more via contacts are disposed through the active layer configured to couple the at least one reconfigurable electrode segment and the at least one reconfiguration layer. The at least one reconfiguration layer is coupled to a reconfiguration switch for reconfiguring electrical connections to the at least one reconfigurable electrode segment. The MEMS device is configured to generate different resonant frequencies by reconfiguring the electrical connections to the at least one reconfigurable electrode segment using the reconfiguration switch.

Growing community of inventors

Singapore, Singapore

Joan Josep Giner De Haro