Forschungsverbund Berlin E.v.

Joachim Wuerfl

Victor Sidorov

Wilfred John

Rimma Zhytnytska

Tim Wernicke

Eldat Bahat-Treidel

Olaf Krueger

Gerd Schoene

A transistor in which the electric field is reduced in critical areas using field plates, permitting the electric field to be more uniformly distributed along the component, is provided, wherein the electric field in the active region is smoothed and field peaks are reduced. The semiconductor component has a substrate with an active layer structure, a source contact and a drain contact located on said active layer structure. The source contact and the drain contact are mutually spaced and at least one part of a gate contact is provided on the active layer structure in the region between the source contact and the drain contact, a gate field plate being electrically connected to the gate contact. In addition, at least two separate field plates are placed directly on the active layer structure or directly on a passivation layer.

HEMT semiconductor component with field plates

The invention relates to a method for producing a metallization for at least one contact pad and a semiconductor wafer having metallization for at least one contact pad. The invention relates to a metallization (and a semiconductor wafer having corresponding metallization) and to a method for the production thereof that first of all can be produced by means of physical gas phase separation (dry separation) and secondly ensures sufficient adhesion of a lot bump. The method for producing a metallization () for at least one contact pad () according to the invention comprises the following process steps: applying at least one contact pad () to a substrate (), applying a barrier layer () to the top side of the at least one contact pad () and applying a metallization () to the top side of the barrier layer (), characterized in that the barrier layer () and the metallization () are applied by means of physical separation and that the metallization () is designed as a layer structure having two multiple alternating metallization layers (), wherein the first metallization layer () is made of nickel or an Ni alloy having a layer thickness of less than 500 nm and the second metallization layer () is made of a material that is different than nickel and is electrically conductive.

Method for producing a metallization having two multiple alternating metallization layers for at least one contact pad and semiconductor wafer having said metallization for at least one contact pad

The invention relates to a method for producing vertical through-contacts (micro-vias) in semi-conductor wafers in order to produce semi-conductor components, i.e. contacts on the front side of the wafer through the semi-conductor wafer to the rear side of the wafer. The invention also relates to a method which comprises the following steps: blind holes on the contact connection points are laser drilled from the rear side of the wafer into the semi-conductor substrate, the wafer is cleaned, the semi-conductor substrate is plasma etched in a material selected manner until the active layer stack of the wafer is reached, the active layer stack of the wafer is plasma etched in a material selective manner until the contacts, which are to be connected to the rear side of the wafer, are reached, a plating base is applied to the rear side of the wafer and into the blind holes and gold is applied by electrodeposition onto the metallizied rear side of the wafer and the blind holes.

Method for producing through-contacts in semi-conductor wafers via production of through-plated holes

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Zeuthen, Germany

Joachim Wuerfl