Siemens Aktiengesellschaft

Infineon Technologies Ag

Qimonda Ag

Altis Semiconductor, Snc

Stiftung Caesar Center of Advanced European Studies and Research

Stifting Caesar

Joachim Wecker

Günter Schmid

Ludwig Schultz

Manfred Ruehrig

Kurt Schnitzke

Matthias Katter

Ulrich Karl Klostermann

Manfred Rührig

Rittmar Von Helmolt

Alfred Ludwig

Juergen Zimmer

Guenter Schmid

Bernhard Winkler

Wolfgang Clemens

Wiebke Sarfert

Stephan Schmitt

Roland Weiss

Hubert Brueckl

Erich Hufgard

Ana-Maria Krestel

Markus Löhndorf

Eckhard Quandt

Eckhardt Quandt

Eckard Quandt

Jurgen Steinkirchner

Ralph Pätzodl

A method is provided for producing phosphorescent emitter layers composed of at least one organic fluorescent emitter F and at least one metal complex K including organic complex ligands L and at least one heavy main group metal M selected from the group consisting of In, Tl, Sn, Pb, Sn and Bi. The organic fluorescent emitter F and the metal complex K may be individually deposited as layers on a substrate and subsequently reacted with each other, wherein the coordination sphere of the heavy main group metal M is changed by receiving the organic fluorescent emitter F.

Sequential functionalization of phosphorescent emitter layers

An embodiment of the invention provides an integrated circuit having a cell. The cell includes a first magnetic layer structure having a first magnetization along a first axis, a non-magnetic spacer layer structure disposed above the first magnetic layer structure, and a second magnetic layer structure disposed above the non-magnetic spacer layer structure. The second magnetic layer structure has a second magnetization along a second axis that is arranged in an angle with regard to the first axis such that by changing the direction of the second magnetization, the direction of the first magnetization along the first axis can be determined.

Integrated circuits, cell, cell arrangement, method of reading a cell, memory module

The invention relates to a force sensor having a layer sequence for determining a force acting on the layer sequence along a predefined force axis. The layer sequence includes, arranged successively in a vertical direction, a first magnetic layer with a first magnetization direction, a separating layer and a second magnetic layer with a second magnetization direction. Here, the first magnetization direction is secured with respect to the layer sequence. The second magnetic layer has a magnetostriction constant that is different from zero and a uniaxial magnetic anisotropy with an anisotropy axis. The uniaxial magnetic anisotropy is generated using shape anisotropy. The second magnetization direction encloses an angle of more than 0&#xb0; and less than 90&#xb0; with the force axis in the quiescent state, and the anisotropy axis encloses an angle of more than 0&#xb0; and less than 90&#xb0; with the force axis.

Force sensor array having magnetostrictive magnetoresistive sensors and method for determining a force

An MRAM memory cell is provided having a layer system made of circular-disk-shaped layers. The memory cell includes first and second magnetic layers separated by a nonmagnetic intermediate layer. The first magnetic layer exhibits hard-magnetic behavior and serves as a reference layer. The second magnetic layer exhibits soft-magnetic behavior and serves as a storage layer. An antiferromagnetic layer may be provided on the storage layer. Information is stored by the magnetization state of the storage layer. The storage layer has a weak intrinsic anisotropy that defines a magnetic preferred direction. The magnetization direction of the reference layer is parallel to the magnetization direction of a remanent magnetization in the interior of the storage layer. The remanent magnetization occurs as a result of applying an external magnetic field with a field component perpendicular to the preferred direction of the intrinsic anisotropy of the storage layer.

MRAM memory cell having a weak intrinsic anisotropic storage layer and method of producing the same

An MRAM memory cell has a layer system of circular-disk-shaped layers. The memory cell includes two magnetic layers separated by a nonmagnetic intermediate layer. The first magnetic layer or reference layer exhibits hard-magnetic behavior. The second magnetic layer or storage layer exhibits soft-magnetic behavior. Information is stored by the magnetization state of the storage layer. The storage layer has a weak intrinsic anisotropy that defines a magnetic preferred direction. The magnetization direction of the reference layer is parallel to the magnetization direction of a remnant magnetization in the interior of the storage layer. The remnant magnetization occurs as a result of applying an external magnetic field with a field component perpendicular to the preferred direction of the intrinsic anisotropy of the storage layer.

A sensor for measuring mechanical changes in length, in particular a compressive and/or tensile stress sensor, includes a sandwich system with two flat and superposed electrodes separated from each other by a tunnel element (tunnel barrier), in particular an oxide barrier, a current being set up between the electrodes and through the tunnel barrier, one electrode consisting of a magnetostrictive layerwhich responds to elongation, and wherein the contributions of the anisotropies caused by mechanical tension are larger than those from the intrinsic anisotropies, relative changes in system resistance &#x394;R/R larger than 10% at room temperature being attained during elongation.

TMR sensor

A method and apparatus for homogeneously magnetizing an exchange-coupled layer system of a digital magnetic memory cell device comprising an AAF layer system and an antiferromagnetic layer that exchange-couples a layer of the AAF layer system, characterized in that, given a defined direction of magnetization of the antiferromagnetic layer, the magnetic layers of the AAF layer system are saturated in a magnetic field and, afterward, the position of the direction of the antiferromagnetic layer magnetization and the direction of the saturating magnetic field relative to one another is changed, so that they are at an angle &#x3b1; of 0&#xb0;&#x3c;&#x3b1;&#x3c;180&#xb0; relative to one another, after which the saturating magnetic field is switched off.

Method for homogeneously magnetizing an exchange-coupled layer system of a digital magnetic memory location device

A sensor device having a magnetostrictive force sensor is provided. To detect a force, the sensor device contains a TMR force sensor element having a magnetic detection layer of material having a magnetostriction coefficient &#x3bb;&#x2267;|5&#xb7;10|, a magnetically harder reference layer, and a tunnel barrier disposed between these layers. Established in the detection layer is a starting magnetization that relative to the magnetization of the reference layer, which is directed in the direction of force, forms an angle of other than 0&#xb0; and thus is rotated out of its starting position under the effect of the force.

Sensor device having a magnetostrictive force sensor

A digital magnetic memory cell device for read and/or write operations has a soft-magnetic read and/or write layer system formed of at least one soft-magnetic read and/or write layer, and a hard-magnetic reference layer system. The two systems are separated by a barrier layer. The soft-magnetic read and/or write layer is an amorphous layer with an induced or inducible uniaxial anisotropy.

Digital magnetic memory cell device

The contactless proximity switch detects one or more predefined spacing distances between a first part and a second part. The two parts are movably disposed relative to one another. A magnetic angle sensor is disposed in or on the first part and a driver magnet with a driving magnetic field is arranged in or on the second part. When the two parts are at the predefined spacing between then the driving magnetic field produces in the angle sensor an effective direction of field lines which differs from the direction of the original state field lines of the angle sensor. The original field direction is imposed on the angle sensor by a biasing magnetic field which originates either from the driver magnet or from a separate biasing magnet.

Contactless proximity switch

A magnetoresistive sensor may be constructed with material having a perovskite-like crystal structure and an increased magnetoresistive effect. The material is based on the composition (A1).sub.1-x (A2).sub.x MnO.sub.z, with A1 (trivalent) selected from Y, La, or a lanthanide, A2 (bivalent) from an alkaline-earth metal or Pb, and with 0.1.ltoreq.x.ltoreq.0.9 and 2.0.ltoreq.z.ltoreq.3.5. The sensor contains a layer system with at least two layers with different materials, but in each case in the context of the aforesaid composition, which is selected so that the temperature correlation of the electrical resistance is relatively small. The two layers of the layer system can also be united into a single layer structure with a concentration gradient.

Magnetoresistive sensor utilizing a sensor material with a

A method for preparing a structure having enhanced magneto-resistance, and use of the structure, in which it is possible to prepare a structure having enhanced magnetoresistance on the basis of the system of materials Cu--Co, especially for a magnetoresistive sensor. An intermediate of the structure is formed initially from an alloy having Cu mixed crystals supersaturated with Co by means of a rapid-solidification technique and this intermediate is subsequently converted by means of a predefined heat treatment into an end product of the desired structure having precipitations of or including Co in a Cu matrix.

Method for preparing a structure having enhanced magnetoresistance, and

Magnetic material of the Sm-Fe-N system exhibits a crystalline hard magnetic phase with a Th.sub.2 Zn.sub.17 crystalline structure wherein N atoms are incorporated in the crystalline lattice. A preliminary product having a dual component Sm.sub.2 Fe.sub.17 phase is produced by mechanical alloying followed by thermal treatment to achieve the desired microstructure. The preliminary product is heated in a nitrous atmosphere, as a result of which, the hard magnetic phase is formed. The preliminary product may also be obtained by a rapid-quenching technique.

Process for the production of magnetic material based on the Sm-Fe-N

Magnet material of the Sm-Fe-N system having a crystalline, hard magentic phase with a Th.sub.2 Zn.sub.17 crystal structure, wherein N atoms are incorporated into the crystal lattice, is produced. First a preliminary product is formed by sintering a Sm-Fe powder which is oriented in a magnetic field to provide a sintered body having a two-component Sm-Fe phase. The sintered body is heat treated in a nitrogen atmosphere to form the Sm-Fe-N hard magnetic phase. The nitrogen atomosphere may advantageously be reactive nitrogen.

Process for the production of an anisotropic magnetic material based

A shaped body of anisotropic magnetic material based on the Sm-Fe-N system which has a crystalline, hard magnetic phase with a Th.sub.2 Zn.sub.17 crystal structure, wherein N atoms are incorporated in the crystal lattice, is produced by compacting a powder Sm-Fe preliminary product with an Sm-Fe phase having a magnetically isotropic structure, followed by hot-shaping to provide an intermediate product with a Sm-Fe phase having a magnetically anisotropic structure, followed by heat treating the intermediate product in a nitrogen atmosphere to provide a Sm-Fe-N hard magnetic phase.

Growing community of inventors

Roettenbach, Germany

Joachim Wecker