Nexperia B.v.

Nxp B.v.

Joachim Utzig

Hans-Martin Ritter

Jochen Wynants

Wolfgang Schnitt

Steffen Holland

Andreas Johannes Köllmann

Zhihao Pan

Tobias Sprogies

Frank Burmeister

Thomas Igel-Holtzendorff

Godfried Henricus Josephus Notermans

Steffen Rode

Rainer Mintzlaff

Joerg Syré

A semiconductor device and method of manufacturing a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a semiconductor layer located on the substrate; at least one shallow trench and at least one deep trench. Each of the at least one shallow trench and the at least one deep trench extending from a first major surface of the semiconductor layer. Sidewall regions and base regions of the trenches comprise a doped trench region and the trenches are at least partially filled with a conductive material contacting the doped region. The shallow trenches terminate in the semiconductor layer and the deep trench terminates in the semiconductor substrate.

Multi-trench semiconductor device and method of manufacture thereof

A semiconductor device and a method of making the same. The device includes a substrate comprising a major surface and a backside. The device also includes a dielectric partition for electrically isolating a first part of the substrate from a second part of the substrate. The dielectric partition extends through the substrate from the major surface to the backside.

Semiconductor substrate with electrically isolating dielectric partition

A low-pass filter comprising: a filter input terminal; a filter output terminal; a filter FET configured to provide a resistance between the filter input terminal and the filter output terminal; a filter capacitor connected between the filter output terminal and a reference terminal; a bias FET configured to provide a bias voltage to the filter FET; a buffer connected between the filter input terminal and the bias FET, the buffer configured to source a bias current for the bias FET; and an offset voltage source configured to contribute to the bias voltage provided to the filter FET.

Low-pass filter

Growing community of inventors

Hamburg, Germany

Joachim Utzig