Leybold Aktiengesellschaft

Balzers Und Leybold Deutschland Holding Ag

Leybold Systems Gmbh

Unaxis Deutschland Holding Gmbh

Leybold-heraeus Gmbh

Balzers Und Leybold Deutsch

Balzers Und Leybold Deutschland Holding

Joachim Szczyrbowski

Klaus Hartig

Anton Dietrich

Anton Zmelty

Gotz Teschner

Stephan Roegels

Dietmar Marquardt

Michael Scherer

Christoph Braatz

G&ouml;tz Teschner

Manfred Schuhmacher

Andreas Sauer

Gunter Brauer

G&uuml;nter Br&auml;uer

Hans Kunz

Hans-Christian Schaefer

J&uuml;rgen Bruch

Rudolf Latz

Alfons Zoller

Ulrich Patz

Wolfram Maass

Gerhard Steiniger

Siegfried Beisswenger

Goetz Teschner

Albert Kastner

Stefan Rogels

Wolfgang Lohwasser

Michael Schanz

Stephan Rogels

Manfred Ruske

A process is provided for sputter-induced precipitation of metal oxide layers on substrates by means of a reactive sputter process. The plasma charge acting upon the target to be evaporated is provided with electric power selected such that the metal oxide layers precipitated on the substrates to be coated are deposited at a precipitation rate of &gE;4 nm/s. During the coating process the substrate to be coated is arranged stationary in relation to the target material to be evaporated. The electrodes are connected in a conductive manner to the outputs of an alternating current source whereby the alternating frequency of the alternating current provided for the electrical supply of the plasma discharge is selected between 10 kHz and 80 kHz. Particularly preferred is that the precipitated oxide layer is a TiO layer or an SiO layer.

Interference layer system

A process gas source ( ) is connected to the vacuum chamber ( ), and a metering valve ( ) actuated by an automatic controller is installed between the vacuum chamber ( ) and the process gas source ( ). A potentiometric measurement electrode compares the amount of a gas in the vacuum chamber ( ) with a reference gas by way of a reference electrode or with a solid body substituting for the reference electrode and sends a signal to automatic control unit ( ), which contains a signal amplifier. The control unit then drives the generator of the power supply or the metering valve for the process gas.

Apparatus for applying thin layers to a substrate

A sputtering electrode is switched between two power values at a constant reactive gas flow rate which is selected so that the target of the sputtering electrode is in the metallic mode at the first power value while in the oxide mode at a second power value.

Configuration for coating a substrate by means of a sputtering device

A thermally insulating coating system for curved and/or hardened glass panes includes at least one layer of noble metal enclosed by a lower and an upper blocker layer. An underoxidic NiCrO,layer with a thickness between one &angst; and two nm is embedded into the noble-metal layer. The advantage is that the optical qualities of the coating system are not influenced by the tempering and curving of the glass pane.

Thermally-insulating coating system

Power supply lines (,) connect poles of an alternating current power source (,) to respective cathodes (,) in compartments (,), included among a plurality of adjacent compartments (,), which together form a vacuum chamber (,) and which are connected to each other by a passageway (,). The two compartments (,) with the cathodes (,) are separated from each other by intermediate compartments (,), at least some of which are equipped with additional sputter cathodes (,).

Apparatus for coating a substrate

An apparatus is provided for coating a substrate (24) with thin layers from targets (12, 13) between which a gas discharge plasma is sustained in order to produce the ions necessary for the bombardment of the targets (12, 13) connected to alternating current. The process chamber (6) contains a gas under a specific partial pressure. The targets (12, 13) are connected to a power source in such a circuit so that they alternately form the cathode and anode of the gas discharge. The reversal of the current direction is performed through an H bridge (4) formed of four switches (16 to 19), the conductor (14) connecting the H bridge (4) to a first power source (3) being connected through a branch line (21) to a second power source which can be connected by a switch (20) to ground. All switches (19 to 20) are operated by a control circuit in a regular and variable mode, the ion energy being controlled by the level of the potential difference between the cathode and the coating and the number of ions through the duration of this potential

Apparatus for coating a substrate with thin layers

A crucible (4) in a vacuum chamber (3) holds material to be evaporated, such as a metal or metal oxide or a mixture of a metal and a metal oxide, and a coating roll (6) guides a film web (8) a certain distance away from the material to be evaporated. A chamber (9, 10) is provided on each side of the coating roll (6) which carries the film web (8) past the crucible (4), a magnetron cathode (11, 12) connected to a medium-frequency source (19) being provided in each chamber. Each of the two chambers (9, 10) is connected by its own channel (13, 14) to a coating zone (20) directly between the coating roll (6) and the crucible (4), and each chamber (9, 10) is connected by a pressure line (21, 22) to a source (23, 24) of process gas.

Apparatus for coating a web on a rotating drum by plasma assisted vapor

In an apparatus for the sputter deposition of thin electrically insulating layers on substrates (33, 33', . . . ) there is provided in an evacuable chamber which is connected to a treatment gas source, a first pair of tubular magnetron cathodes (5, 5' or 31) and at least one additional pair of magnetron cathodes (6, 6' or 25, 26 or 30, 32), a medium frequency generator (10) connected in series with a transformer (9), where the two secondary winding outputs (11, 12) of said transformer are each connected with the cathodes of a second pair (6, 6' or 25, 26 or 30, 32) and where direct current can be fed into the supply lines for the first cathode pair (31) via a center tap (15) of the transformer (9) and a network (17 or 13, 14).

Device for sputter deposition of thin layers on flat substrates

A system of layers applied to a transparent substrate includes a first layer of an oxide such as ZnO or SnO.sub.2, a second layer of a substoichiometric oxide of Zn or Ta, a third layer of Ag or Cu, a fourth layer of a substoichiometric oxide of Ti, Cr, or Nb, and a fifth layer of similar composition as the first layer. The layers are preferably deposited by magnetron cathode sputtering in an atmosphere which consists of inert gas and, in the case of the oxide layers, a reactive gas.

Pane of transparent material having a low emissivity

A dual magnetron cathode assembly includes a pair of elongate, parallel targets in coplanar relationship fixed to respective magnetic yokes with associated rows of permanent magnets for producing a magnetic field over the targets. A common back plate is provided for both cathodes, a center shield plate extending from the back plate to between the targets, side shield plates and end shield plates likewise extending from the back plate to form side-by-side rectangular shielding enclosures which expose only the sputtering surface of the targets. The yokes are fixed with respect to the vacuum chamber by insulative holders which extend through openings in the back plate.

Dual target cathode assembly with shielding

A vacuum chamber contains a crucible (4) and an electron beam source (5) for evaporating material in the crucible. A substrate holder (6) holds substrates (7) above the crucible (4) with a process space therebetween. A magnetron cathode (11, 12) is located in each of two compartments (9, 10) located on either side of the process space. An aperture (21, 22) connects each compartment to the process space; each cathode (11, 12) carries a target (13, 14) facing away from the respective aperture (21, 22). The cathodes are connected to a medium frequency RF power supply (16), and process gas is supplied to the compartments by lines (17, 18).

Vacuum coating apparatus with a crucible in the vacuum chamber to hold

An alternating-current source (2) is connected to two cathodes (6,7) which cooperate electrically with targets which are sputtered in a gas discharge while a process gas is introduced in a vacuum chamber (15). A network formed of a transformer (3) and additional coils (5, 12, 13) and condensers (4, 8, 9, 10, 11) acts as a filter to assure a stable coating process.

Apparatus for coating substrates in a vacuum

A source of alternating current (3), is connected to two magnetron cathodes (4, 5), one pole (8) of the a.c. current source (4) being connected to one of the cathodes (4), while the other pole (9) is connected to the other cathode (5), each by its own power supply line (10, 11). Each of the two cathodes (4, 5) is installed in its own compartment (12, 13), the two compartments enclosing between them a third compartment (14), connected to a vacuum source (21). The two outside compartments (12, 13) are connected to each other by openings (15, 16) or gaps in the walls (17, 18) separating them, and the substrate (2) set up in the third compartment (14) facing a CVD source, which consists essentially of a reactive gas inlet (19) and a collimator (20).

Apparatus for coating a substrate by chemical vapor deposition

A vacuum chamber includes a central compartment (1) in which a diode cathode (6) carrying an electrically conductive sputtering target (7) is located, and two outer compartments (11, 12) in which magnetron cathodes (13, 14) carrying target 15, 16) are located, the magnetron cathodes (13, 14) being connected to respective poles (20, 21) of an AC power source. The outer compartments (11, 12) are separated from the central compartment by walls having openings (33, 34) which flank a space (28) between the sputtering target (6) and the substrate (3). Process gas lines 24, 25) are arranged to introduce process gas into this space (3).

Growing community of inventors

Goldbach, Germany

Joachim Szczyrbowski