Infineon Technologies Ag

Joachim Seifert

Paul Frank

Frank Wagner

Werner Robl

Evelyn Napetschnig

Stefan Woehlert

Tobias Schmidt

Kamil Karlovsky

Eric Graetz

Michael Ehmann

Gretchen Adema

Thomas Bertaud

Oliver Schilling

Ulrich Wilke

Lars Boewer

Roman Immel

Altan Toprak

A semiconductor device includes a semiconductor die including a first side and an opposing second side, a first metallization layer arranged on the first side, a Ni including layer arranged on the second side, wherein the Ni including layer further includes one or more of Si, Cr and Ti, and a SnSb layer arranged on the Ni comprising layer, wherein an amount of Sb in the SnSb layer is in the range of 2 wt % to 30 wt %.

Semiconductor device with a nickel comprising layer and method for fabricating the same

An electronic device, an electronic module comprising the electronic device and methods for fabricating the same are disclosed. In one example, the electronic device includes a semiconductor substrate and a metal stack disposed on the semiconductor substrate, wherein the metal stack comprises a first layer, wherein the first layer comprises NiSi.

Electronic device, electronic module and methods for fabricating the same

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Schwerte, Germany

Joachim Seifert