Robert Boschgmbh

Joachim Rudhard

Tjalf Pirk

Wolfgang Feiler

Klaus Heyers

Achim Trautmann

Jens Baringhaus

Veronique Krueger

Marco Lammer

Thorsten Mueller

Daniel Krebs

Frederik Schrey

Alberto Martinez-Limia

A vertical fin field-effect transistor. The transistor has a semiconductor fin, an n-doped source region, an n-doped drift region, an n-doped channel region in the semiconductor fin situated vertically between the source region and the drift region, a gate region horizontally adjacent to the channel region, a gate dielectric electrically insulating the gate region from the channel region, a boundary surface between the gate dielectric and the channel region having negative boundary surface charges, a p-doped gate shielding region situated below the gate region so that, given the vertical projection, the gate shielding region is situated within a surface limited by the gate dielectric, a source contact electrically conductively connected to the source region, and an electrically conductive region between the gate region and the p-doped gate shielding region. The p-doped gate shielding region is electrically conductively connected to the source contact by the electrically conductive region.

Vertical fin field effect transistor, vertical fin field effect transistor arrangement, and method for forming a vertical fin field effect transistor

A semiconductor device having a substrate, and at least one contact, situated on and/or above a surface of the substrate, having at least one layer made of a conductive material, the conductive material including at least one metal. The layer made of the conductive material is sputtered on, and has tear-off marks on at least one outer side area between an outer base area facing the surface and an outer contact area facing away from the surface. A manufacturing method for a semiconductor device having at least one contact is also described.

Semiconductor device having at least one contact, and manufacturing method for a semiconductor device having at least one contact

A micromechanical actuator includes a shaft and at least a first driving mechanism. The shaft and the first driving mechanism are connected by a first joint.

Micromechanical actuator having multiple joints

The invention relates to a method for capping a MEMS wafer (), in particular a sensor and/or actuator wafer, with at least one mechanical functional element (). According to the invention, it is provided that the movable mechanical functional element () is fixed by means of a sacrificial layer (), and that a cap layer () is applied to, in particular epitaxially grown onto, the sacrificial layer () and/or to at least one intermediate layer () applied to the sacrificial layer (). The invention also relates to a capped MEMS wafer ().

Method for capping a MEMS wafer and MEMS wafer

A sensor array, in particular a micromechanical sensor array, and methods for manufacturing the sensor array are provided, which sensor array includes a sensor section for supplying certain sensor signals, and a cover section provided on the sensor section to form a hermetically sealed sensor interior. An electronic analyzer device is at least partially integratable into cover section for analysis of the sensor signals, and electrically connectable to a corresponding circuit device of the sensor section.

Sensor arrangement, in particular a micro-mechanical sensor arrangement

A method for producing a micromechanical structure, and a micromechanical structure having a movable structure and a stationary structure made of silicon. In the method for producing the micromechanical structure, in one process step, a superficial metal-silicide layer is produced in the movable structure and/or the stationary structure.

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Leinfelden-Echterdingen, Germany

Joachim Rudhard