Infineon Technologies Ag

Joachim Patzer

Matthias Krönke

The invention provides a method for fabricating contact-making connections, having the steps of: a) providing a substrate () with electronic circuit units () arranged thereon, an intermediate layer () filling an interspace between the electronic circuit units (); an insulation layer () being deposited on the electronic circuit units () and on the intermediate layer (); a masking layer () being deposited on the insulation layer (); and the masking layer () being patterned with a through-plating structure (); b) patterning a contact-making region by means of the masking layer (), a contact-making hole () being etched through the insulation layer () and the intermediate layer () as far as the substrate (), a section of the substrate () being uncovered in accordance with the through-plating structure (); c) filling the contact-making hole () with a through-plating material (); d) polishing back the covering layer () deposited on the masking layer () as far as the masking layer (); e) depositing a contact-making layer () on the masking layer () and the through-plating material, the contact-making layer () being electrically contact-connected with the through-plating material (); and f) patterning the contact-making layer () together with the residual masking layer () in accordance with a structure of a contact-making layer mask () applied to the contact-making layer () in order to form interconnects as contact-making connections in a metallization plane (M).

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Dessau, Germany

Joachim Patzer