Infineon Technologies Ag

Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Micropelt Gmbh

Micropatent B.v.

Innovative Sensor Technology Ist Ag

Joachim Nurnus

Axel Schubert

Florian Krogmann

Fritz Volkert

Harald Böttner

Christa K&uuml;nzel

Martin Schmidt

Martin Jagle

Harald B&ouml;ttner

Mike Benkendorf

The invention relates to a monitoring arrangement for monitoring an electrical line having at least one thermogenerator and/or a device for inductively producing energy, determination means for determining at least one electrical characteristic parameter of an electrical current flowing in the electrical line and/or the temperature of the electrical line and/or the area surrounding the electrical line. An electrical connection exists or can be established between the determination means and the thermogenerator or the device for inductively producing energy, which connection can be used to operate the determination means with electrical energy produced by the thermogenerator or provided by the device for inductively producing energy; and connection means for establishing a mechanical connection to the electrical line.

Monitoring arrangement and method for monitoring an electrical line

The invention relates to a method for production of at least one thermoelectric apparatus with the steps of: preparation of a first wafer () which is formed from a thermoelectric material of a first conductivity type; preparation of a second wafer which is formed from a thermoelectric material of a second conductivity type; structuring of the first wafer () so that a group of first thermoelectric structures () is produced; structuring of the second wafer so that a group of second thermoelectric structures is produced; and linking of the first to the second wafer in such a manner that the first and the second thermoelectric structures are electrically connected together and thus form the thermoelectric apparatus. According to the invention, before the structuring of the first wafer (), a first contact material () is deposited on the first wafer () and/or before the structuring of the second wafer, a second contact material is deposited onto the second wafer.

Method for production of a thermoelectric apparatus

A microelectromechanical device and a method for producing it having at least one layer on a substrate, in particular a thermoelectric layer on a substrate, the thermal expansion coefficient of the at least one layer and the thermal expansion coefficient of the substrate differing greatly. The at least one layer is coupled to at least one stress reduction means for the targeted reduction of lateral mechanical stresses present in the layer. This achieves a stress-free layer or enables stress-free growth.

Microelectromechanical device and method for producing it

A method produces a thermoelectric layer structure on a substrate and the thermoelectric layer structure has at least one electrically anisotropically conductive V-VI layer, in particular a (Bi, Sb) (Te, Se) layer. The V-VI layer is formed by use of a seed layer or by a structure formed in the substrate, and disposed relative to the substrate such that an angle between the direction of the highest conductivity of the V-VI layer and the substrate is greater than 0&deg;. The orientation can also be effected by an electric field. Components are formed of the thermoelectric layer structure in which the angle between the direction of the highest conductivity of the V-VI layer and the substrate is greater than 0&deg;. As a result, the known anisotropy of the V-VI materials can advantageously be used for the construction of components.

Methods for producing a thermoelectric layer structure and components with a thermoelectric layer structure

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Neuenburg, Germany

Joachim Nurnus