Meyer Burger (germany) Ag

Meyer Burger (germany) Gmbh

Roth & Rau Ag

Meyer Burger Ag

Meyer Burger Gmbh

Roth & Rau - Microsystems Gmbh

Joachim Mai

Andreas Heinze

Hans-Peter Sperlich

Arthur Buechel

Mirko Kehr

Sebastian Raschke

Benjamin Strahm

Karl-Heinz Dittrich

Dietmar Roth

Thomas Grosse

Danny Mueller

Daniel Decker

Guillaume Wahli

Hermann Schlemm

Stefan Helbig

Thomas Schulze

Oliver Loewel

Bernd Rau

Michael Grimm

Valeri Fell

The invention relates to a plasma treatment device with a treatment chamber, at least one pair of microwave plasma sources and at least one voltage source. Each pair of microwave plasma sources consists of a first microwave plasma source and a second microwave plasma source, wherein the first and the second microwave plasma source each have a plasma source wall and, within this, a microwave coupling-in device and a plasma electrode. The first and the second microwave plasma source are arranged within the treatment chamber on the same side of one or more substrates to be processed and adjacently to one another. The plasma electrodes of the first microwave plasma source and the second microwave plasma source are electrically insulated from one another and electrically conductively connected to the at least one voltage source. Here, the at least one voltage source is suitable for supplying the plasma electrodes of the first and the second microwave plasma source with different potentials. The invention also relates to a method for operating a plasma treatment device of this kind.

Plasma treatment device with two microwave plasma sources coupled to one another, and method for operating a plasma treatment device of this kind

A substrate processing device contains a substrate loading/unloading area for loading/unloading of substrates. The substrate processing device further has a process chamber, a carrier device with which the substrates are transported by a carrier transport device to the process chamber, and a gas-tight closing device between the process chamber and the carrier transport area as well as a gas-tight closing device between the substrate loading/unloading area and the carrier transport area. The substrate processing device allows substrate processing at a high quality with high process purity, thereby being suitable for mass production. The object is achieved by the substrate loading/unloading area being coupled with the carrier transport area by a substrate transfer area with a substrate transfer device for transferring the substrates from a substrate cassette provided in the substrate loading/unloading area and in which substrates can be arranged in different horizontal cassette levels of the substrate cassette.

Substrate processing device

The subject matter of the instant invention is a plasma generation device in which at least one inductive device and at least one capacitive device are provided for coupling energy into a plasma in a plasma chamber. The at least one inductive device and the at least one capacitive device can be supplied with energy separately from one another by different frequency generators or by a common frequency generator.

Plasma generation device

A device for gas movement in vacuum-coating systems is disclosed that extracts gaseous coating material in the coating chamber that has not been deposited on the substrates to be coated. At least one pump for extracting the coating material is connected to it in an axial extension of the suction device; the suction device has one or more suction openings and is divided up into at least two axial areas whose suction characteristics can be adjusted separately from one another to a great extent.

Gas separation

A microwave plasma generating device has a plasma chamber. A microwave generating device is provided outside of the plasma chamber, and the microwaves are coupled into the plasma chamber via a microwave in-coupling device. The microwave in-coupling device has an inner conductor which leads into the plasma chamber through a chamber wall of the plasma chamber, an insulating tube which encloses the inner conductor and separates the inner conductor from an interior of the plasma chamber, and an outer conductor which leads into the plasma chamber through the chamber wall and which is coaxial to the inner conductor. The outer conductor has an outer conductor end in the plasma chamber. The inner and outer conductors form a microwave line, an outlet of microwaves out of the microwave line is provided in the plasma chamber to generate microwave plasma in the interior of the plasma chamber.

Microwave plasma generating device and method for operating same

A capacitive-coupled parallel plate plasma enhanced chemical vapor deposition reactor includes a gas distribution unit that is integrated in an RF electrode and is formed with a gas outlet. The parallel plate reactor is configured so that layers with high thickness homogeneity and quality can be produced. The capacitively coupled parallel plate plasma enhanced vapor deposition reactor has gas distribution unit with a multiple-stage showerhead constructed in such a way that it provides an independent adjustment of gas distribution and gas emission profile of the gas distribution unit.

Parallel plate reactor for uniform thin film deposition with reduced tool foot-print

A method and device for ion beam processing of surfaces of a substrate positions the substrate to face an ion beam, and a new technologically-defined pattern of properties is established. According to the method, the current geometrical effect pattern of the ion beam on the surface of the substrate is adjusted depending on the known pattern of properties and the new technologically-defined pattern of properties, and depending upon the progress of the processing, by modifying the beam characteristic and/or by pulsing the ion beam. A device for carrying out the method includes a substrate support for holding at least one substrate, which can be moved along an Y-axis and an X-axis, and an ion beam source for generating an ion beam, which is perpendicular to the surface to be processed of the substrate in the Z-axis or which may be arranged in an axis, inclined in relation to the Z-axis. The distance between the ion beam source and the surface to be processed of the substrate may be fixed or variable.

Method and device for ion beam processing of surfaces

Growing community of inventors

Nobitz, Germany

Joachim Mai