Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Joachim Hertkorn

Werner Bergbauer

Tetsuya Taki

Matthias Peter

Tobias Meyer

Alexander Frey

Alexander Walter

Jürgen Off

Berthold Hahn

Thomas Lehnhardt

Juergen Off

Karl Engl

Lorenzo Zini

Rainer Butendeich

Massimo Drago

Johannes Baur

Volker Haerle

Jan-Philipp Ahl

Christian Leirer

Andreas Weimar

Philipp Drechsel

Andreas Loeffler

Marcus Eichfelder

Ingrid Koslow

Dario Schiavon

Matthias Sabathil

Dominik Scholz

Andreas Biebersdorf

Simeon Katz

Peter Stauss

Christian Schmid

Kai Gehrke

Christian Mueller

Ansgar Laubsch

In an embodiment an electronic semiconductor chip includes a growth substrate with a growth surface including a flat region having a plurality of three-dimensionally designed surface structures on the flat region, a nucleation layer composed of oxygen-containing AlN in direct contact with the growth surface at the flat region and the three-dimensionally designed surface structures and a nitride-based semiconductor layer sequence on the nucleation layer, wherein the semiconductor layer sequence overlays the three-dimensionally designed surface structures, and wherein the oxygen content in the nucleation layer is greater than 10cm.

Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip

A light-emitting diode includes a semiconductor body and electrical connection points for contacting the semiconductor body, the semiconductor body including an active region including a quantum well that generates electromagnetic radiation, a first region and a second region that impede passage of charge carriers from the active region, wherein the semiconductor body is based on a nitride compound semiconductor material, the first region is directly adjacent to the active region on a p-side, the second region is arranged on a side of the first region facing away from the active region, the first region has an electronic band gap larger than the electronic band gap of the quantum well and less than or equal to an electronic band gap of the second region, the first region and the second region contain aluminum, and the active region emits electromagnetic radiation having a peak wavelength of less than 480 nm.

Optoelectronic semiconductor body and light-emitting diode

A semiconductor body and a method for producing a semiconductor body are disclosed. In an embodiment a semiconductor body includes a p-conducting region, wherein the p-conducting region has at least one barrier zone and a contact zone, wherein the barrier zone has a first magnesium concentration and a first aluminum concentration, wherein the contact zone has a second magnesium concentration and a second aluminum concentration, wherein the first aluminum concentration is greater than the second aluminum concentration, wherein the first magnesium concentration is at least ten times less than the second magnesium concentration, wherein the contact zone forms an outwardly exposed surface of the semiconductor body, and wherein the barrier zone adjoins the contact zone, and wherein the semiconductor body is based on a nitride compound semiconductor material.

Semiconductor body and method for producing a semiconductor body

A method for producing a nitride compound semiconductor component is disclosed. In an embodiment the method includes providing a growth substrate, growing a nucleation layer of an aluminum-containing nitride compound semiconductor onto the growth substrate, growing a tension layer structure for generating a compressive stress, wherein the tension layer structure comprises at least a first GaN semiconductor layer and a second GaN semiconductor layer, and wherein an Al(Ga)N interlayer for generating the compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer and growing a functional semiconductor layer sequence of the nitride compound semiconductor component onto the tension layer structure, wherein a growth of the second GaN semiconductor layer is preceded by a growth of a first 3D AlGaN layer on the Al(Ga)N interlayer in such a way that it has nonplanar structures.

Method for producing a nitride compound semiconductor component

A semiconductor body main include a III-V compound semiconductor material having a p-conductive region doped with a p-dopant. The p-conductive region may include at least one first section, one second section, and one third section. The second section may be arranged between the first and third sections. The second section may directly adjoin the first and third sections. An indium concentration of at least one of the sections differs from an indium concentration of the other two sections.

In an embodiment a method includes providing a growth substrate comprising a growth surface formed by a planar region having a plurality of three-dimensional surface structures on the planar region, directly applying a nucleation layer of oxygen-containing AlN to the growth surface and growing a nitride-based semiconductor layer sequence on the nucleation layer, wherein growing the semiconductor layer sequence includes selectively growing the semiconductor layer sequence upwards from the planar region such that a growth of the semiconductor layer sequence on surfaces of the three-dimensional surface structures is reduced or non-existent compared to a growth on the planar region, wherein the nucleation layer is applied onto both the planar region and the three-dimensional surface structures of the growth surface, and wherein a selectivity of the growth of the semiconductor layer sequence on the planar region is targetedly adjusted by an oxygen content of the nucleation layer.

An optoelectronic semiconductor component may have a semiconductor body comprising a first region of an n-type conductivity, a second region of a p-type conductivity, an active region capable of generating electromagnetic radiation, a marker layer, a plurality of emission regions and a plurality of recesses. The active region is disposed between the first region and the second region in a plane parallel to the main extension plane of the semiconductor body. The recesses delimit the emission regions in lateral direction. Starting from the side of the first region facing away from the active region, the recesses extend transversely to the main plane of the semiconductor body in the direction of the second region and adjoin the marker layer or penetrate the marker layer completely. The recesses are formed only in the first region or the recesses extend into the second region and completely penetrate the active region.

Optoelectronic semiconductor component, and method for producing an optoelectronic semiconductor component

An optoelectronic component includes an active layer having a multiple quantum well structure, wherein the multiple quantum well structure includes quantum well layers, including AlInGaN with 0&#x2264;x1&#x3c;0.03, 0&#x2264;y1&#x2264;0.1 and x1+y1&#x2264;1, and barrier layers including AlInGaN with 0&#x2264;x2&#x2264;1, 0&#x2264;y2&#x2264;0.02 and x2+y2&#x2264;1, wherein the barrier layers have a spatially varying aluminium content x2, a maximum value of the aluminium content in the barrier layers is x2,max&#x2265;0.05, and a minimum value of the aluminium content in the barrier layers is x2,min&#x3c;0.05.

Optoelectronic component

A method of producing light-emitting diode chips includes A) and C)-F) in order: A) providing a growth substrate, C) producing a structural layer, the structural layer including AlGaInN, where-in y1&#x2265;0.5, and a plurality of structural elements with a mean height of at least 50 nm so that a side of the structural layer facing away from the growth substrate is rough, D) producing a cover layer on the structural layer, the cover layer forming the structural layer true to shape and including AlGaInN, wherein x2&#x2265;0.6, E) producing a planarization layer on the cover layer, a side of the finished planarization layer is flat and the planarization layer includes AlGaInN, wherein x3+y3&#x2264;0.2, and F) growing a functional layer sequence that generates radiation on the planarization layer.

Method of producing light-emitting diode chips and light-emitting diode chip

An optoelectronic semiconductor body includes an active region including a quantum well that generates electromagnetic radiation, a first region that impedes passage of charge carriers from the active region, and a second region that impedes passage of charge carriers from the active region, wherein the semiconductor body is based on a nitride compound semiconductor material, the first region is directly adjacent to the active region on a p-side, the second region is arranged on a side of the first region facing away from the active region, the first region has an electronic band gap larger than the electronic band gap of the quantum well and less than or equal to an electronic band gap of the second region, and the first region and the second region contain aluminum.

Optoelectronic semiconductor body and light emitting diode

A semiconductor body is disclosed. In an embodiment a semiconductor body includes a p-doped region, an active region, an intermediate layer and a layer stack containing indium, wherein an indium concentration in the layer stack changes along a stacking direction, wherein the layer stack is formed with exactly one nitride compound semiconductor material apart from dopants, wherein the intermediate layer is nominally free of indium, arranged between the layer stack and the active region, and directly adjoins the layer stack, wherein the intermediate layer and/or the layer stack are n-doped at least in places, wherein a dopant concentration of the layer stack is at least 5*101/cmand at most 2*101/cm, and wherein a dopant concentration of the intermediate layer is at least 2*101/cmand at most 3*101/cm.

Semiconductor body

A semiconductor chip and a method for producing a semiconductor chip are disclosed. In an embodiment an electronic semiconductor chip includes a growth substrate with a growth surface, which is formed by a planar region having a plurality of three-dimensional surface structures on the planar region, a nucleation layer composed of oxygen-containing AlN directly disposed on the growth surface and a nitride-based semiconductor layer sequence disposed on the nucleation layer, wherein the semiconductor layer sequence is selectively grown from the planar region such that a growth of the semiconductor layer sequence on surfaces of the three-dimensional surface structures is reduced or non-existent compared to a growth on the planar region, and wherein a selectivity of the growth of the semiconductor layer sequence on the planar region is targetedly adjusted by an oxygen content of the nucleation layer.

In an embodiment a semiconductor layer sequence includes a pre-barrier layer including AlGaN, a pre-quantum well including InGaN having a first band gap, a multi-quantum well structure including a plurality of alternating main quantum wells of InGaN having a second band gap and main barrier layers of AlGaN or AlInGaN, wherein the second band gap is smaller than the first band gap and the main quantum wells are configured to generate a radiation having a wavelength of maximum intensity between 365 nm and 490 nm inclusive, a post-quantum well with a third band gap which is larger than the second band gap, a post-barrier layer including AlGaN or AlInGaN and an electron-blocking layer including AlGaN.

Semiconductor layer sequence having pre- and post-barrier layers and quantum wells

A method for producing an optoelectronic semiconductor device and an optoelectronic semiconductor device are disclosed. In an embodiment the method includes providing a semiconductor layer sequence including a light-emitting and/or light-absorbing active zone and a top face downstream of the active zone in a stack direction extending perpendicular to a main plane of extension of the semiconductor layer sequence, applying a layer stack onto the top face, wherein the layer stack includes an oxide layer containing indium, and an intermediate face downstream of the top face in the stack direction and applying a contact layer onto the intermediate face, wherein the contact layer includes indium tin oxide, and wherein the layer stack is, within the bounds of manufacturing tolerances, free of tin.

Method for producing an optoelectronic semiconductor device and optoelectronic semiconductor device

A method of producing an optoelectronic semiconductor chip includes in order: A) creating a nucleation layer on a growth substrate, B) applying a mask layer on to the nucleation layer, C) growing a coalescence layer, wherein the coalescence layer is grown starting from regions of the nucleation layer not covered by mask islands having a first main growth direction perpendicular to the nucleation layer so that ribs are formed, D) further growing the coalescence layer with a second main growth direction parallel to the nucleation layer to form a contiguous and continuous layer, E) growing a multiple quantum well structure on the coalescence layer, F) applying a mirror having metallic contact regions that impress current into the multiple quantum well structure and mirror islands for the total reflection of radiation generated in the multiple quantum well structure, and G) detaching the growth substrate and creating a roughening by etching.

Growing community of inventors

Wörth an der Donau, Germany

Joachim Hertkorn