Energy Conversion Devices, Inc.

Sovonics Solar Systems

Canon Inc.

Joachim Doehler

Jeffrey M Krisko

Lester R Peedin

Buddie R Dotter, Ii

Stanford R Ovshinsky

Stephen J Hudgens

Masatsugu Izu

Kevin R Hoffman

Vincent D Cannella

Herbert C Ovshinsky

David A Gattuso

Annette J Krisko

Timothy Ellison

Masatsugo Izu

Wolodymyr Czubatyj

David D Allred

Annette G Johncock

Timothy D Laarman

Jaime M Reyes

Scott Jones

Eugene Fournier

Erik J Bjornard

Wolodymyr Czubatjy

Rajendra Singh

Gary M DiDio

Therese McDonough

Jeffrey M Kirsko

Richard O Gray, Jr

Eugene W Fournier

Buddy R Dotter, Ii

Buddie Dotter Ii

Disclosed herein is an improved gas gate for interconnecting regions of differing gaseous composition and/or pressure, more particularly between atmosphere and a vacuum. The gas gate includes a cylinder within a housing situated between the regions of differing gaseous pressure, wherein the gas gate provides for choke mode transonic flow of air leaks between the regions. A web of substrate material is adapted to move between the regions with at least one roller in a first region and at least one roller in a second region. The rollers are positioned to create sufficient tension as the web advances over the top peripheral portion of the cylinder between the two regions or under the bottom peripheral portion of the cylinder between the two regions.

Gas gate for isolating regions of differing gaseous pressure

Apparatus and method for the vacuum deposition of at least two different layers of thin film material onto a substrate by two different vacuum deposition processes. Also disclosed is a novel linear applicator for using microwave enhanced CVD to uniformly deposit a thin film of material over an elongated substrate.

Apparatus for the simultaneous deposition by physical vapor deposition and chemical vapor deposition and method therefor

A microwave apparatus for sustaining a substantially uniform plasma over a relatively large area. The microwave apparatus comprises a vacuum vessel for sustaining the plasma in a plasma region thereof. The apparatus further comprises a nonevanescent microwave applicator having means for controlling the cutoff frequency thereof. The microwave applicator may comprise a waveguide and a volume of dielectric material disposed within the waveguide. Alternately, the microwave applicator may comprise ridge waveguide.

Large area microwave plasma apparatus with adaptable applicator

A novel high speed, high quality plasma enhanced surface modification or CVD thin-film deposition method and apparatus. The invention employs both microwave and e-beam energy for creation of a plasma of excited species which modify the surface of substrates or are deposited onto substrates to form the desired thin film. The invention also employs a gas jet system to introduce the reacting species to the plasma. This gas jet system allows for higher deposition speed than conventional PECVD processes while maintaining the desired high quality of the deposited materials.

E-beam/microwave gas jet PECVD method and apparatus for depositing

A photovoltaic module which includes at least one photovoltaic cell which is encapsulated in a non-reacted, injection molded polymeric material, thereby forming an environmental seal around the cell. The photovoltaic cell(s) are incorporated into a photovoltaic panel having front and back sides and edges forming a perimeter, and also includes means for external electrical connection to the photovoltaic cell. The non-reacted injection molded polymeric material encapsulating the panel may form useful structures, such as shingles, blocks, cases, or boxes.

Photovoltaic module having an injection molded encapsulant

Disclosed herein is an improved gas gate for interconnecting regions of differing gaseous composition and/or pressure. The gas gate includes a narrow, elongated passageway through which substrate material is adapted to move between said regions and inlet means for introducing a flow of non-contaminating sweep gas into a central portion of said passageway. The gas gate is characterized in that the height of the passageway and the flow rate of the sweep gas therethrough provides for transonic flow of the sweep gas between the inlet means and at least one of the two interconnected regions, thereby effectively isolating one region, characterized by one composition and pressure, from another region, having a differing composition and/or pressure, by decreasing the mean-free-path length between collisions of diffusing species within the transonic flow region. The gas gate preferably includes a manifold at the juncture point where the gas inlet means and the passageway interconnect.

Magnetic roller gas gate employing transonic sweep gas flow to isolate

A method for the low temperature, microwave enhanced, chemical vacuum deposition of thin film material onto a surface of a hollow member by creating a sub-atmospheric pressure condition adjacent the surface to be coated while maintaining the applicator through which microwave energy is introduced at substantially atmospheric pressure.

Low temperature plasma enhanced CVD process within tubular members

A window assembly for transmitting relatively high power microwave energy from a waveguide, held at substantially atmospheric pressure levels, into a microwave reaction chamber at sub-atmospheric pressure levels. The window assembly provides for the transmission of microwave energy to generate a glow discharge plasma without suffering from catastrophic failure as a result of excessive temperature and pressure conditions.

Highpower microwave transmissive window assembly

Microwave plasma operation using a high power microwave transmissive

A method of depositing high quality thin film at a high rate of deposition through the formation of a high flux of activated precursor species of a precursor deposition gas by employing a substantial pressure differential between the pressure adjacent the aperture in a conduit from which said precursor deposition gas is introduced into the interior of a vacuumized enclosure and the background pressure which exits in said enclosure. As the precursor deposition gas is introduced into said enclosure, a high density plume of said activated precursor species are formed therefrom due to an electromagnetic field established in an activation region adjacent said aperture. The pressure differential is sufficient to cause those activated precursor species to be deposited upon a remotely positioned substrate. In order to obtain a sufficient pressure differential, it is preferred that the flow of the precursor deposition gas reaches transonic velocity. And in order to obtain a high quality thin film, it is preferred that the plume of activated precursor species is spaced from the substrate; without structural or electrical confinement, a distance from the activation region greater than the mean free path of undesired activated precursor species and within the mean free path of desired species.

Method of depositing directly activated species onto a remotely located

A method of forming a high flux of activated species, such as ions, of an energy transferring gas by employing a substantial pressure differential between a first conduit in which the energy transferring gas is introduced into a vacuumized enclosure and the background pressure which exits in said enclosure. In one embodiment, the flow rate of the energy transferring gas flowing through said first conduit, when taken in conjunction with said pressure differential, causes the high flux to activated species of the energy transferring gas to collide with a precursor deposition/etchant gas, remotely introduced into the enclosure through a second conduit, for forming deposition/etchant species therefrom. In an alternate embodiment, the pressure differential causes those activated species, themselves, to be either deposited upon or etched away from the surface of a remotely positioned substrate.

Method of creating a high flux of activated species for reaction with a

High power microwave transmissive window assembly

Microwave energy apparatus adapted to sustain a substantially uniform plasma over a relatively large area. In the broadest form of the invention, an isolating window is disposed about the microwave applicator, said isolating window formed from a material through which the microwave energy can be transmitted from the applicator into a plasma reaction vessel and said isolating window configured in a shape which is substantially optimized to withstand compressive forces. In this manner, the thickness of the isolating window may be minimized to provide for rapid thermal cooling, wherby high power densities may be achieved without cracking the window.

Large area microwave plasma apparatus

A method of forming a high flux of activated species, such as ions, of an energy transferring gas by employing a substantial pressure differential between a first conduit in which the energy transferring gas is introduced into a vacuumized enclosure and the background pressure which exits in said enclosure. In one embodiment, the flow rate of the energy transferring gas flowing through said first conduit, when taken in conjunction with said pressure differential, causes the high flux of activated species of the energy transferring gas to collide with a precursor deposition/etchant gas, remotely introduced into the enclosure through a second conduit, for forming deposition/etchant species therefrom. In an alternate embodiment, the pressure differential causes those activated species, themselves, to be either deposited upon or etched away from the surface of a remotely positioned substrate.

Method for the high rate plasma deposition of high quality material

Growing community of inventors

Union Lake, MI, United States of America

Joachim Doehler