Hamamatsu-photonics K.k.

Jo Ito

Katsumi Shibayama

Tomofumi Suzuki

Daiki Suzuki

Yoshihisa Warashina

Tatsuya Sugimoto

Nao Inoue

Kohei Kasamori

Go Tanaka

Atsuya Iima

A method of manufacturing a semiconductor substrate according to an embodiment includes a first step of forming a groove having a bottom surface and a side surface on which scallops are formed by performing a process including isotropic etching on a main surface of a substrate, a second step of performing at least one of a hydrophilic treatment on the side surface of the groove and a degassing treatment on the groove, and a third step of removing the scallops formed on the side surface of the groove and planarizing the side surface by performing anisotropic wet etching in a state where the bottom surface of the recess is present.

Method for manufacturing semiconductor substrate, method for manufacturing damascene wiring structure, semiconductor substrate, and damascene wiring structure

A method of manufacturing an optical interferometer includes a first step of forming a first semiconductor portion for a beam splitter and a second semiconductor portion for a movable mirror on a main surface of a support substrate and a first insulating layer formed on the main surface, a second step of disposing a first wall portion between a first side surface of the first semiconductor portion and a second side surface in the second semiconductor portion, and a third step of forming a mirror surface in the second semiconductor portion by forming a first metal film on the second side surface using a shadow mask. In the third step, the first side surface is masked by the mask portion and the first wall portion and the first metal film is formed in a state in which the second side portion is exposed from an opening portion.

Method for manufacturing optical interferometer

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Hamamatsu, Japan

Jo Ito