Samsung Display Co., Ltd.

Jiyun Hong

Joongeol Kim

Kap Soo Yoon

Woogeun Lee

Youngjae Jeon

Seungsok Son

Seokhwan Bang

Hyunseong Kang

Jongin Kim

Ki-Won Kim

Jaehyun Lee

Dong-Ju Yang

Woo Geun Lee

Beomsoo Park

Jongmoo Huh

Kwangsoo Lee

Hyungchul Kim

Seulki Kim

Soojung Chae

Keum Hee Lee

Eunhye Park

Seungrae Kim

Kapsoo Yoon

Donghoon Shin

Junewhan Choi

Kisu Jin

Seungjin Kim

Jeongeum Lee

Junki Lee

Seung-ha Choi

A display apparatus includes a substrate including a display area and a peripheral area outside the display area, a thin film transistor arranged on the substrate corresponding to the display area and including a semiconductor layer and a gate electrode, a pad electrode arranged on the substrate corresponding to the peripheral area and including a material the same as that of the semiconductor layer, and a first insulating layer arranged on the thin film transistor and the pad electrode and including an opening that partially exposes the pad electrode. Accordingly, failure to perform a normal operation by a pixel circuit and a light-emitting element may be prevented.

Display apparatus with exposed pad electrode

A display apparatus includes a substrate including a display area and a peripheral area adjacent to the display area, a thin-film transistor located in the display area of the substrate and including a semiconductor layer and a gate electrode overlapping a channel region of the semiconductor layer, a conductive layer disposed between the substrate and the semiconductor layer and including a first electrode located in the display area of the substrate and a pad electrode located in the peripheral area of the substrate, and a first insulating layer disposed between the conductive layer and the semiconductor layer and having a first opening that exposes at least a portion of an upper surface of the pad electrode.

Display apparatus and method of manufacturing the same

A method of manufacturing a thin film transistor includes: forming an active pattern on a substrate; forming an insulating layer and a gate electrode layer on the active pattern in order; forming a photoresist pattern on the gate electrode layer; forming a preliminary gate electrode by wet etching the gate electrode layer using the photoresist pattern; forming an insulating pattern by dry etching the insulating layer using the photoresist pattern and the preliminary gate electrode; and forming a gate electrode by wet etching a side surface of the preliminary gate electrode using the photoresist pattern.

Method of manufacturing thin film transistor, method of manufacturing display apparatus and thin film transistor substrate

A display panel includes a first base substrate, a gate line disposed on the first base substrate and extending in a first direction, a gate electrode electrically connected to the gate line, a thin film transistor including an active pattern which includes a source area, a drain area and a channel area overlapping the gate electrode, a common electrode disposed on the first base substrate, where a common voltage is applied to the common electrode, an auxiliary common electrode line electrically connected to the common electrode, and including an opaque metal, a pixel electrode electrically connected to the thin film transistor, and disposed on the common electrode to overlap the common electrode, and a cover electrode connected to the auxiliary common electrode line, and overlapping the channel area.

Display panel and method of manufacturing the same

A method of fabricating a thin-film transistor substrate includes disposing an oxide semiconductor layer on an insulating substrate, performing a thermal treatment process to the oxide semiconductor layer, providing an alignment mark, a source electrode, a drain electrode, and an oxide semiconductor pattern, after the thermal treatment process, providing a gate electrode, after the thermal treatment process, and providing a pixel electrode connected to the drain electrode.

Thin film transistor substrate, display device including the same, and fabricating method of the thin film transistor substrate

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Seoul, South Korea

Jiyun Hong