Samsung Display Co., Ltd.

Jiyoung Moon

Yoonhyeung Cho

Dongchan Kim

Jihye Lee

Hakchoong Lee

Jihwan Yoon

Haemyeong Lee

Heechang Yoon

Jongwoo Kim

Wonsuk Han

Myungsuk Han

Minho Oh

Yoonseok Ka

Jonghyuk Lee

Chulsoon Lee

Donghui Lee

Seungjae Lee

Wonjong Kim

Dongkyu Seo

Jaeheung Ha

Yongtack Kim

Jaehoon Hwang

Hajin Song

Hyungseok Jang

Yeongrong Park

Youngcheol Joo

Myungchul Yeo

Won Sang Park

Donghoon Kim

Jong-In Baek

Eun Jin Sung

Sanghoon Yim

Byeonghee Won

Dahea Im

Heungkyoon Lim

Deokchan Yoon

A light-emitting device and an electronic apparatus including the same are provided. The light-emitting device includes: a first electrode; a second electrode facing the first electrode; m emission units stacked between the first electrode and the second electrode and including an emission layer; and m−1 charge generation layers each between two neighboring emission units from among the m emission units, wherein m is an integer of 2 or more, at least one of the m emission units includes an inorganic mixed layer between the first electrode and the emission layer, and the inorganic mixed layer includes an inorganic insulating material and an inorganic semiconductor material.

Light-emitting device including inorganic mixed layer and electronic apparatus including the same

A light-emitting device and an apparatus including the same include a first electrode, a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, wherein the organic layer includes m emission units and (m−1) charge generating units, each of the charge generating units being between the emission units that are adjacent to each other, m is a natural number of 2 or greater, at least one of the (m−1) charge generating units includes an n-type charge generating layer, a p-type charge generating layer, and a p-type hole injection layer, wherein the n-type charge generating layer includes an n-type organic compound and a metal material, and wherein the p-type charge generating layer and the p-type hole injection layer each independently include an inorganic semiconductor material.

Light-emitting device and apparatus including same

A light-emitting device includes a second electrode that includes: a first layer including a first metal having a work function with an absolute value of 5.2 eV or less and a second metal having an electrical conductivity of 1×10S/m or more; and a second layer consisting of the second metal having the electrical conductivity of 1×10S/m or more. The first metal and the second metal are different from each other, a thickness of the first layer is from 1 Å to 30 Å, and a thickness of the second layer is from 10 Å to 110 Å.

Light-emitting device and electronic apparatus including the same

A display apparatus includes a first electrode on a substrate, a second electrode facing the first electrode, and an emission layer between the first electrode and the second electrode, wherein the second electrode includes a first conductive layer including a first base metal and a first additive metal that is different from the first base metal, a second conductive layer on the first conductive layer and including a single metal material, and a third conductive layer on the second conductive layer and including a second base metal and a second additive metal that is different from the second base metal.

Multilayer electrode, light-emitting diode including the same, and display apparatus

A light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an interlayer between the first electrode and the second electrode and including a first layer, wherein the first electrode has a work function value of about −5.5 eV to about −6.1 eV, and the interlayer includes a second layer doped with a non-lead-based perovskite compound.

Light-emitting device and electronic apparatus including same

A light-emitting device and an apparatus including the same include a first electrode, a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, wherein the organic layer includes m emission units and (m-1) charge generating units, each of the charge generating units being between the emission units that are adjacent to each other, m is a natural number of 2 or greater, at least one of the (m-1) charge generating units includes an n-type charge generating layer, a p-type charge generating layer, and a p-type hole injection layer, wherein the n-type charge generating layer includes an n-type organic compound and a metal material, and wherein the p-type charge generating layer and the p-type hole injection layer each independently include an inorganic semiconductor material.

A method of forming a perovskite thin film and a light-emitting device including a layer manufactured by the method.

Method of forming perovskite thin film and light-emitting device including layer manufactured thereby

A light-emitting device and a method of manufacturing the same are provided. The light-emitting device may include a first electrode, a second electrode, and an interlayer located between the first electrode and the second electrode. The interlayer may include an emission layer that includes a first material, a second material, and a third material. The first material may include an inorganic semiconductor compound, an inorganic insulator compound, or any combination thereof. The second material may include a lanthanide metal. The third material may include an organic compound. An apparatus including the light-emitting device is provided.

Light-emitting device and apparatus including the same

An organic light-emitting device includes an auxiliary layer located between a first electrode and a hole injection layer or a hole transport layer and including a metal fluoride. The metal of the metal fluoride may be a Group III metal having a high work function of 3.8 eV or more. The hole injection barrier at the interface between the first electrode and the hole injection layer may be adjusted by the fluoride of the high work function metal in the auxiliary layer so that the electron-hole charge balance and the efficiency of the organic light-emitting device may be improved.

Organic light-emitting device

A light-emitting device and an apparatus including the same include a first electrode, a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, wherein the organic layer includes m emission units and (m&#x2212;1) charge generating units, each of the charge generating units being between the emission units that are adjacent to each other, m is a natural number of 2 or greater, at least one of the (m&#x2212;1) charge generating units includes an n-type charge generating layer, a p-type charge generating layer, and a p-type hole injection layer, wherein the n-type charge generating layer includes an n-type organic compound and a metal material, and wherein the p-type charge generating layer and the p-type hole injection layer each independently include an inorganic semiconductor material.

A light-emitting device includes: a first electrode; a second electrode facing the first electrode; light-emitting units in the number of n between the first electrode and the second electrode; and a charge-generation unit(s) in the number of n&#x2212;1 between the adjacent light-emitting units. The light-emitting units each include an emission layer, and at least one of the charge-generation unit(s) includes an n-type charge-generation layer, a p-type charge-generation layer, and an interlayer between the n-type charge-generation layer and the p-type charge-generation layer. The p-type charge-generation layer includes a first material and a second material, the first material includes a hole-transporting organic compound, an inorganic insulation compound, or any combination thereof, the second material includes at least one inorganic semiconductor compound, the interlayer comprises a third material, and the third material is selected from an organic compound, an inorganic semiconductor compound, and an inorganic insulation compound.

A light-emitting device includes a first electrode; a second electrode facing the first electrode; m emission units between the first electrode and the second electrode; and m&#x2212;1 charge-generating unit(s) between adjacent ones of the emission units, where m is a natural number of 2 or more. The emission units each include an emission layer. At least one of the charge-generating unit(s) includes an n-type charge-generating layer and a p-type charge-generating layer; and the n-type charge-generating layer includes a first material and a second material. The first material includes an organic electron transport compound; and the second material includes at least one selected from an alkali metal, an alkali metal alloy, an alkaline earth metal, an alkaline earth metal alloy, a lanthanide metal, and a lanthanide metal alloy. The light-emitting device may have improved hole and electron balance, a decreased driving voltage, and excellent efficiency and/or lifespan characteristics.

Light-emitting device, method of manufacturing the same, and apparatus including light-emitting device

Disclosed is an organic light-emitting diode device including: a first electrode; a second electrode disposed opposite to the first electrode; m light-emitting units (where m is an integer of 2 or more) disposed between the first electrode and the second electrode, and including at least one light-emitting layer; and m-1 charge generation layers each interposed between two adjacent light-emitting units of the m light-emitting units; wherein at least one of the m-1 charge generation layers includes a compound for a charge generation layer, which includes a boron-containing compound bonded to a metal halide by a one-electron sigma bond.

Organic light-emitting diode device and compound for charge generation layer included therein

A display device includes a display substrate including at least one step portion, and a thin film encapsulation layer above the display substrate, the thin film encapsulation layer including a buffer layer configured to reduce a height difference due to the at least one step portion and a barrier layer above the buffer layer, the buffer layer including a plurality of sub-layers and interfaces between the plurality of sub-layers, and the interfaces including a curved surface changing from a concave shape to a convex shape toward a portion overlapping the step portion from an outer portion of the step portion.

Display device having a buffer layer comprising a plurality of sub layers and interfaces

An organic electroluminescence device includes a first electrode, a hole transport region on the first electrode, a light emitting layer on the hole transport region, an electron transport region on the light emitting layer, and a second electrode on the electron transport region. The electron transport region includes an electron transport layer directly on the light emitting layer. The electron transport layer includes a first ternary compound including a halogen element.

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Gwangju-si, South Korea

Jiyoung Moon