Samsung Electronics Co., Ltd.

Lg Electronics Inc.

Agency for Defense Development

Renesas Design Korea Inc.

Jiyoung Jung

Jeong Il Park

Eun Kyung Lee

Ajeong Choi

Joo Young Kim

Youngjun Yun

Byong Gwon Song

Jihyun Kim

Jaewon Jang

Ha-Young Kim

Jintae Kim

Seojin Lee

Don-Wook Lee

Woo Young Yang

Jaeseok Yang

Suk Gyu Hahm

Sanghyun Hong

Yooseok Kwon

Jungryun Lee

Myong Jong Kwon

Yasutaka Kuzumoto

Bongsoo Roh

Chunghee Kim

Hyungseok Choi

Youngjae Kim

Mijeong Hoh

Chanyi Park

Donggyun Kim

Sungkeun Park

Sangeun Shim

Sosan Hwang

Jeong Ii Park

Myounghun Han

Changhawn Park

Munchang Jung

Jumhyuk Jang

Hyunho Choi

Eutteum Kong

Uiseong Yu

Daekwon Kang

Younggook Park

Myungsoo Jang

The present disclosure provides a method for supporting a connection between devices serving on different channels, and a device serving on a first channel and supporting connection with a counterpart device serving on a second channel different from the first channel. The device includes a transceiver and a processor configured to control the transceiver. The processor is configured to broadcast a first beacon frame over the first channel, to generate a second beacon frame including information on the first channel, and to broadcast the second beacon frame over the second channel.

Methods for supporting connection between devices serving on different channels and device thereof

A thin film transistor includes a gate electrode, a semiconductor layer overlapped with the gate electrode, a gate insulating layer between the gate electrode and the semiconductor layer, and a source electrode and a drain electrode electrically connected to the semiconductor layer. The semiconductor layer includes a plurality of holes. The gate insulating layer may include a plurality of recess portions at a surface of the gate insulating layer facing the semiconductor layer. A method of manufacturing the thin film transistor is provided. A thin film transistor array panel and an electronic device may include the thin film transistor.

Thin film transistor and method of manufacturing the same and thin film transistor panel and electronic device

Disclosed are a polymer including at least one structural unit with a moiety represented by Chemical Formula 1, an organic thin film including the polymer, a thin film transistor, and an electronic device.  In Chemical Formula 1, Arto Ar, L, L, and Rto Rare the same as described in the detailed description.

Polymer and organic thin film and thin film transistor and electronic device

The present invention provides a method for the manufacture of transition metal oxide fine particles, the method comprising the steps of: heating a strong-alkaline aqueous solution while stirring same; adding to and dissolving in the heated strong-alkaline aqueous solution a transition metal oxide; adding a strong-acid aqueous solution to the strong alkaline aqueous solution in which the transition metal oxide is dissolved, while stirring same, thereby re-dissolving a solid generated at the interface between the strong-alkaline aqueous solution and the strong-acid aqueous solution; adjusting the pH of the mixed aqueous solution resulting from mixing the strong-alkaline aqueous solution and the strong acid aqueous solution, through adjustment of the adding rate and amount of the strong-acid aqueous solution, to precipitate transition metal oxide fine particles; and separating the transition metal oxide fine particles from the mixed aqueous solution and sequentially washing, drying, and thermally treating the separated transition metal oxide fine particles.

Method for manufacture of transition metal oxide fine particles

Disclosed are a coating liquid including polyorganosiloxane represented by Chemical Formula 1, a film obtained therefrom, a stacked structure including the same, a thin film transistor, and an electronic device.(RRRSiO)(RRSiO)(RSiO)(RSiO)(RSiO)(SiO)&#x2003;&#x2003;[Chemical Formula 1] In Chemical Formula 1, Rto R, M1, D1, T1 to T3, and Q1 are the same as defined in the detailed description.

Coating liquid and film and thin film transistor and electronic device

Disclosed are a thin film transistor including a source electrode and a drain electrode facing each other, a channel region between the source electrode and the drain electrode, and a gate electrode overlapped with the channel region, wherein the channel region includes a plurality of semiconductor stripes extending in a direction from the source electrode to the drain electrode, a method of manufacturing the same, a thin film transistor array panel, and an electronic device.

Thin film transistor and method of manufacturing the same and thin film transistor array panel and electronic device

A composition includes a product of a condensation reaction between a thermal cross-linking agent and a product of hydrolysis and condensation polymerization of a compound represented by Chemical Formula 1.

Composition, electronic device, and thin film transistor

A light emitting composite includes a light emitting element and a three dimensional protection structure bound to the light emitting element and surrounding the light emitting element. The three dimensional protection structure includes a SiOmoiety and a polymerizable functional group. A light emitting structure, an optical sheet, and an electronic device are also disclosed.

Light emitting composite and light emitting structure and optical sheet and electronic device

An insulating ink includes a nanoparticle bonded with a substituent having a polymerizable functional group, at least one of an organosilane compound and polyorganosiloxane, and a solvent.

Insulating ink and insulator and thin film transistor and electronic device

An organic compound is represented by Chemical Formula 1, and an organic thin film, a thin film transistor, and an electronic device includes the organic compound.

Organic compound and organic thin film and electronic device

Provided is a Weighted DESYNC based cross-layered resource allocation method. The method includes, with respect to each of a plurality of nodes constituting a routing path, calculating a link quality value with the next node, receiving a link quality value from at least one neighbor node, and based on the link quality values in the calculating of the link quality value and the receiving of the link quality value, calculating a weight factor for synchronizing a transmission yield.

Cross-layered resource allocation method based on weighted desync in wireless ad-hoc network

A composition includes a product of a condensation reaction between a thermal cross-linking agent and a product of hydrolysis and condensation polymerization of a compound represented by Chemical Formula 1:  In Chemical Formula 1, the definitions of the substituents are the same as in the detailed description. Further, an electronic device and a thin film transistor include a cured material of the composition.

A thin film transistor includes a gate electrode, a semiconductor overlapping the gate electrode, a gate insulator between the gate electrode and the semiconductor, and a source electrode and a drain electrode electrically connected to the semiconductor, wherein the gate insulator includes an inorganic insulation layer facing the gate electrode and an organic insulation layer facing the semiconductor. A method of manufacturing the thin film transistor and an electronic device including the thin film transistor are provided.

Thin film transistor, method of manufacturing same, and electronic device including thin same

Growing community of inventors

Seoul, South Korea

Jiyoung Jung