Kla Tencor Corporation

Asml Netherlands B.v.

Kla-tencor Technologies Corporation

Jiyou Fu

Noam Sapiens

Stilian Pandev

Kevin A Peterlinz

Daniel Kandel

Michael Friedmann

Kenneth P Gross

Torsten Rudolf Kaack

Boris Golovanevsky

Zhiming Jiang

Fabio A Faccini

Shakar Krishnan

A method for determining stochastic edge placement error associated with a pattern. The method includes acquiring, via a metrology tool, a plurality of images of the pattern at a defined location on the substrate without performing a substrate alignment therebetween; and generating at least two data: (i) first data associated with the pattern using a first set of images of the plurality of images, and (ii) second data associated with the pattern using a second set of images of the plurality of images. The first set of images and the second set of images include at least one different image. The method further includes determining (e.g., via a decomposition algorithm), using the first data and the second data associated with the pattern at the defined location, the stochastic edge placement error associated with the pattern.

Method for determining stochastic variation associated with desired pattern

A spectroscopic beam profile metrology system simultaneously detects measurement signals over a large wavelength range and a large range of angles of incidence (AOI). In one aspect, a multiple wavelength illumination beam is reshaped to a narrow line shaped beam of light before projection onto a specimen by a high numerical aperture objective. After interaction with the specimen, the collected light is passes through a wavelength dispersive element that projects the range of AOIs along one direction and wavelength components along another direction of a two-dimensional detector. Thus, the measurement signals detected at each pixel of the detector each represent a scatterometry signal for a particular AOI and a particular wavelength. In another aspect, a hyperspectral detector is employed to simultaneously detect measurement signals over a large wavelength range, range of AOIs, and range of azimuth angles.

Method and system for spectroscopic beam profile metrology including a detection of collected light according to wavelength along a third dimension of a hyperspectral detector

A spectroscopic beam profile metrology system simultaneously detects measurement signals over a large wavelength range and a large range of angles of incidence (AOI). In one aspect, a multiple wavelength illumination beam is reshaped to a narrow line shaped beam of light that is projected onto an overlay metrology target such that the direction of the line shaped beam is aligned with the direction of extent of a grating structure of the overlay metrology target. Collected light is dispersed across a detector according to AOI in one direction and according to wavelength in another direction. The measured signal at each detector pixel is associated with a particular AOI and wavelength. The collected light includes first order diffracted light, zero order diffracted light, or a combination thereof. In some embodiments, first order diffracted light and zero order diffracted light are detected over separate areas of the detector.

Spectroscopic beam profile overlay metrology

Methods and systems for spectroscopic beam profile metrology having a first two dimensional detector to detect collected light transmitted by a first wavelength dispersive element

Methods and systems for simultaneous detection and linked processing of field signals and pupil signals are presented herein. In one aspect, estimates of one or more structural or process parameter values are based on field measurement signals, pupil measurement signals, or both. In addition, the quality of the measurements of the one or more structural or process parameter values is characterized based on the field measurement signals, pupil measurement signals, or both. In some embodiments, field measurement signals are processed to estimate one or more structural or process parameter values, and pupil measurement signals are processed to characterize the field measurement conditions. In some other embodiments, pupil measurement signals are processed to estimate one or more structural or process parameter values, and field measurement signals are processed to characterize the pupil measurement conditions.

Measurement systems having linked field and pupil signal detection

A method of performing an investigation of a substrate, by measuring a reflectivity of the substrate, comparing the reflectivity of the substrate to an anticipated reflectivity value, selectively subjecting the substrate to a laser beam for a predetermined duration and at a predetermined energy only when the reflectivity of the substrate is within a specified tolerance of the anticipated reflectivity value, selectively signaling a fault condition when the reflectivity of the substrate is not within the specified tolerance of the anticipated reflectivity value, and selectively performing the investigation of the substrate only when the reflectivity of the substrate is within the specified tolerance of the anticipated reflectivity value.

Control by sample reflectivity

Systems and methods are disclosed for using ellipsometer configurations to measure the partial Mueller matrix and the complete Jones matrix of a system that may be isotropic or anisotropic. In one embodiment two or more signals, which do not necessarily satisfy any symmetry assumptions individually, are combined into a composite signal which satisfies a symmetry assumption. The individual signals are collected at two or more analyzer angles. Symmetry properties of the composite signals allow easy extraction of overlay information for any relative orientation of the incident light beam with respect to a 1D grating target, as well as for targets comprising general 2D gratings. Signals of a certain symmetry property also allow measurement of profile asymmetry in a very efficient manner. In another embodiment a measurement methodology is defined to measure only signals which satisfy a symmetry assumption. An optional embodiment comprises a single polarization element serving as polarizer and analyzer. Another optional embodiment uses an analyzing prism to simultaneously collect two polarization components of reflected light.

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San Jose, CA, United States of America

Jiyou Fu