Electronics and Telecommunications Research Institute

University-industry Cooperation Group of Kyung Hee University

Jiyong Woo

Seungeon Moon

Jong Pil Im

Jeong Hun Kim

Seung Youl Kang

Bae Ho Park

Solyee Im

Chansoo Yoon

Sung-Min Yoon

Yeriaron Kim

Ji Hoon Jeon

The present disclosure relates to a memory device, and more particularly, to a memory device including a substrate, a plurality of vertical structures disposed on the substrate and including insulation layers and lower electrodes, which are alternately laminated with each other, wherein the vertical structures are aligned in a first direction parallel to a top surface of the substrate and a second direction crossing the first direction, an upper electrode disposed on a top surface and side surfaces of each of the vertical structures, and a first dielectric layer disposed between the upper electrode and the vertical structures to cover the top surface and the side surfaces of each of the vertical structures. Here, the first dielectric layer includes a ferroelectric material.

Memory device and method of manufacturing the same

Disclosed is a system for tracking a maximum power point. The system includes an energy harvesting device, a power management integrated circuit including a switching circuit that adjusts an input voltage that is transmitted from the energy harvesting device and a conversion circuit that converts the input voltage adjusted by the switching circuit to output an output voltage, and a measuring device that calculates a ratio of a second power based on the input voltage to a first power based on an open circuit voltage of the energy harvesting device, using an internal impedance of the energy harvesting device and an input impedance of the power management integrated circuit.

System and method of measuring maximum power point tracking efficiency

Growing community of inventors

Daejeon, South Korea

Jiyong Woo