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Jiyang Chen

Xiao Andy Shen

Jingbiao Cui

Keyue Wu

A ReRAM device manufactured using 2-D SiTe(silicon telluride) nanowires or nanoplates. The SiTenanowires exhibit a unique reversible resistance switching behavior driven by an applied electrical potential, which leads to switching of the NWs from a high-resistance state (HRS) to a low-resistance state (LRS). This switched LRS is highly stable unless the opposite potential is applied to switch the resistance back. This provides a new class of resistive switching based on semiconductor rather than dielectric materials. In several embodiments, the polarity of the initially applied potential along the SiTenanowires defines the switch 'on' and 'off' directions, which become permanent once set.

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Cordova, TN, United States of America

Jiyang Chen