Micron Technology Incorporated

Jixin Yu

Adam L Olson

Matthew Park

Anish A Khandekar

Ervin T Hill

Jeffrey B Hull

A method of forming a semiconductor device assembly comprises forming tiers comprising conductive structures and insulating structures in a stacked arrangement over a substrate. Portions of the tiers are selectively removed to form a stair step structure comprising a selected number of steps exhibiting different widths corresponding to variances in projected error associated with forming the steps. Contact structures are formed on the steps of the stair step structure. Semiconductor device structures and semiconductor devices are also described.

Semiconductor device structures including stair step structures, and related semiconductor devices

Methods of forming semiconductor device structures including stair step structures

A number of methods are provided for semiconductor processing. One such method includes depositing a first precursor material on a surface at a particular temperature to form an undoped polysilicon. The method also includes depositing a second precursor material on a surface of the undoped polysilicon at substantially the same temperature, wherein the undoped polysilicon serves as a seed to accelerate forming a doped polysilicon.

Methods of semiconductor processing involving forming doped polysilicon on undoped polysilicon

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Sunnyvale, CA, United States of America

Jixin Yu