Cornell University

Samsung Electronics Co., Ltd.

The University of Chicago

Ajou University Industry-Academic Cooperation Foundation

Jiwoong Park

Saien Xie

Mark Philip Levendorf

Hyeonjin Shin

Jinseong Heo

Kibum Kang

Lola Brown

Minhyun Lee

Hui Gao

Cheol-Joo Kim

Jinho Kim

Sukun Yoon

Daniel C Ralph

William R Dichtel

Geunyoung Yu

Young-Bae Ko

Deoknam Kim

Sangu Shim

Arthur R Woll

Kan-Heng Lee

Saehun Oh

Marcos H D Guimaraes

Arnab Mukherjee

Carlos Ruiz-Vargas

Eric Spitler

Yu Zhong

John Colson

Baorui Cheng

Disclosed herein are inventive methods of making thin films, inventive thin films, and inventive articles and systems comprising thin films. Certain embodiments are related to methods of making thin films in which reagents are arranged within a first phase and a second phase such that at least one reagent reacts to form a thin film proximate to the interface between the first phase and the second phase. Thin films (including two-dimensional materials) disclosed herein can have one or more of a variety of beneficial properties including large lateral dimension(s), lateral continuity, high mechanical strength, consistent spatial composition, and/or consistent thickness. In accordance with certain embodiments, thin films disclosed herein can be combined to form a variety of inventive multi-layer articles, including multi-layer articles comprising a combination of thin films having different compositions that interact with each other via van der Waals forces.

Large lateral scale two-dimensional materials and other thin films, and associated systems and methods

Provided are a superlattice structure including a two-dimensional material and a device including the superlattice structure. The superlattice structure may include at least two different two-dimensional (2D) materials bonded to each other in a lateral direction, and an interfacial region of the at least two 2D materials may be strained. The superlattice structure may have a bandgap adjusted by the interfacial region that is strained. The at least two 2D materials may include first and second 2D materials. The first 2D material may have a first bandgap in an intrinsic state thereof. The second 2D material may have a second bandgap in an intrinsic state thereof. An interfacial region of the first and second 2D materials and an adjacent region may have a third bandgap between the first bandgap and the second bandgap.

Superlattice structure including two-dimensional material and device including the superlattice structure

The present invention relates to a method and apparatus for TDOA wireless positioning, has an effect of reducing positioning errors by reducing TDOA errors using destructive interference of multiple anchor nodes by dividing four or more anchor nodes into sets of three or more anchor nodes and by estimating a position of a tag node using TDOA of each set, and has an advantage of reducing the size and weight of the tag node since separate hardware is not required.

Method and apparatus for TDOA wireless positioning using destructive interference of multiple anchor nodes

Provided are an electronic device and method of determining a peer-to-peer (P2P) operating channel. The electronic device includes a communication interface; and a processor configured to acquire access point (AP) connection information of the electronic device about a wireless connection to an AP and BT connection information of the electronic device about a connection to a Bluetooth device, receive, from a peer device attempting to establish a P2P connection to the electronic device, AP connection information of the peer device about a wireless connection to an AP, determine a P2P operating channel between the electronic device and the peer device based on the AP connection information and the BT connection information of the electronic device and the AP connection information of the peer device, and establish a P2P connection between the electronic device and the peer device according to the determined P2P operating channel.

Electronic device for determining P2P operating channel and method thereof

Multilayer structures comprising a covalent organic framework (COF) film in contact with a polyaromatic carbon (PAC) film. The multilayer structures can be made by combining precursor compounds in the presence of a PAC film. The PAC film can be for example, a single layer graphene film. The multilayer structures can be used in a variety of applications such as solar cells, flexible displays, lighting devices, RFID tags, sensors, photoreceptors, batteries, capacitors, gas-storage devices, and gas-separation devices.

Covalent organic framework films, and methods of making and uses of same

Provided are van der Waals (VDW) films comprising one or more transition metal chalcogenide (TMD) films. Also provided are methods of making VDW films. The methods are based on transfer of monolayer TMD films under vacuum, for example, using a handle layer. Also provided are apparatuses and devices comprising one or more VDW film.

Transition metal chalcogenide van der waals films, methods of making same, and apparatuses and devices comprising same

Apparatuses comprising a substrate; a monolayer graphene film disposed on at least a portion of the substrate; and a single-layer transition metal dichalcogenide (TMD) disposed only on the substrate and lateral edges of the monolayer graphene film, methods of making the apparatuses, and devices comprising one or more of the apparatuses. The apparatuses have a one-dimensional ohmic edge contact between the monolayer graphene and monolayer semiconducting TMDs.

Apparatuses with atomically-thin ohmic edge contacts between two-dimensional materials, methods of making same, and devices comprising same

Metal-chalcogenide films disposed on a substrate comprising at least one monolayer (e.g., 1 to 10 monolayers) of a metal-chalcogenide. The films can be continuous (e.g., structurally and/or electrically continuous) over 80% or greater of the substrate that is covered by the film. The films can be made by methods based on low metal precursor concentration relative to the concentration of chalcogenide precursor. The methods can be carried out at low water concentration. The films can be used in devices (e.g., electrical devices and electronic devices).

Monolayer films of semiconducting metal dichalcogenides, methods of making same, and uses of same

Certain embodiments of the present invention include a versatile and scalable process, 'patterned regrowth,' that allows for the spatially controlled synthesis of lateral junctions between electrically conductive graphene and insulating h-BN, as well as between intrinsic and substitutionally doped graphene. The resulting films form mechanically continuous sheets across these heterojunctions. These embodiments represent an element of developing atomically thin integrated circuitry and enable the fabrication of electrically isolated active and passive elements embedded in continuous, one atom thick sheets, which may be manipulated and stacked to form complex devices at the ultimate thickness limit.

Thin film compositions and methods

A method of manufacturing one or more graphene devices is disclosed. A thin film growth substrate is formed directly on a device substrate. Graphene is formed on the thin film growth substrate. A transistor is also disclosed, having a device substrate and a source supported by the device substrate. The transistor also has a drain separated from the source and supported by the device substrate. The transistor further has a single layer graphene (SLG) channel grown partially on and coupling the source and the drain. The transistor also has a gate aligned with the SLG channel, and a gate insulator between the gate and the SLG channel. Integrated circuits and other apparati having a device substrate, a thin film growth substrate formed directly on at least a portion of the device substrate, and graphene formed directly on at least a portion of the thin film growth substrate are also disclosed.

Transfer-free batch fabrication of single layer graphene devices

Growing community of inventors

Ithaca, NY, United States of America

Jiwoong Park