Samsung Electronics Co., Ltd.

Hyundai Motor Company

Kia Motors Corporation

Ajou University Industry-Academic Cooperation Foundation

Yonsei University

Lg Energy Solution, Ltd.

Lg Electronics Inc.

Korea Institute of Science and Technology

Sk Telecom Company, Ltd.

Samsung Display Co., Ltd.

Lg Display Co., Ltd.

Korea Research Institute of Chemical Technology

Ewha University-Industry Collaboration Foundation

Kia Corporation

Seoul Semiconductor Co., Ltd.

Jiwon Kim

Sukkang Sung

Sungmin Hwang

Joonsung Lim

Jiyoung Kim

Sungho Park

Jae Jun Ha

Woosung Yang

Sung-Min Hwang

Kihyun Kim

Jihye Kim

Yongsang Yun

Joon-Sung Lim

Mincheol Ha

Dongzo Kim

Yunjeong Noh

Hyungkoo Chung

Doo Kyung Yang

Kwonnam Sohn

Suenghoon Han

Eunkyung Cho

Dohyung Kim

Jungchul An

Ho Young Lee

Du Sik Park

Kyungmin Lee

Hujun Bao

Eunji Kim

Sun Mi Lee

Jong-Min Lee

Jae Hun Kim

Wonjun Lee

Sanghoon Lee

Jaeho Kim

Kyungho Lee

Won Seok Lee

Jaeho Ahn

Kiyeon Park

Ilsoo Yun

Sangmin Park

Harim Jeong

Cheolwoo Kwon

Kwangseob Kim

Keumsu Song

Changhak O

Jongchul Hong

Moo Whan Shin

Myeong Jun Song

Sangdon Lee

Il To Kim

Kyuok Choi

Guofeng Zhang

Chaekyung Lee

Gyeongtaek Gong

Taeksoo Kim

Younghak Oh

Kyehoon Lee

Won Joon Lee

Chulki Kim

Kwangho Lee

Won Jun Lee

Hyoseok Hwang

Woo-Shik Kim

Joonsung Kim

Boyoung Lee

Seungki Choi

Yonggu Lee

Jigwang Kim

Euntaek Jung

Youngsoon Um

Dongkyung Nam

Youngsun Lee

Wookyung Baik

Minkoo Kang

Yongtaek Gong

Sunyoung Yi

Sangmoo Hwangbo

Sangwon Shim

Gildon Choi

Bo-Keun Kim

Minseob Song

Jaewan Park

Myojin Bang

Kwanghee Ryu

Changhoon Lee

Yong-Sang Ryu

Eui-Sang Yu

Jeongsim Kim

In Heum Park

Jaehong Lee

Sunggon Hong

Chae Won Park

Yujin Lim

Bumhee Han

Byoung Chul Cho

Sungyoun An

Yungkyung Park

Daesu Choi

Haomin Liu

Ja Kyong Ko

A three-dimensional semiconductor memory device may include a peripheral structure and a cell structure on the peripheral structure. The cell structure may include a substrate having first and second surfaces, which are opposite to each other, a stack including gate electrodes, which are stacked on the first surface of the substrate, an insulating layer on the second surface of the substrate, a penetration contact plug penetrating the first surface of the substrate, a first gapfill conductive pattern provided to penetrate the second surface of the substrate and the insulating layer and spaced apart from the penetration contact plug, a second gapfill conductive pattern provided to penetrate the second surface of the substrate and the insulating layer and connected to the penetration contact plug, a first gapfill spacer between the first gapfill conductive pattern and the substrate, and a second gapfill spacer between the second gapfill conductive pattern and the substrate.

Three-dimensional semiconductor memory device and electronic system including the same

An electroluminescent layer according to the present invention comprises a core-shell particle comprising a perovskite crystal core and a shell of a dielectric polymer, wherein a charge transfer pathway to the perovskite crystal core is formed by dielectric breakdown of the dielectric polymer. The electroluminescent layer according to the present invention can prevent the deterioration of perovskite crystals due to external moisture, oxygen, or the like since the perovskite crystal core is enclosed and protected by the dielectric polymer and can have improved charge transfer and injection efficiencies since charges are directly transferred and injected to the perovskite crystals through the charge transfer pathway formed by dielectric breakdown of the dielectric polymer.

Perovskite compound-based electroluminescent layer and light emitting device comprising same

An image acquisition apparatus includes: a multispectral image sensor configured to acquire images in at least four channels based on a second wavelength band of about 10 nm to about 1,000 nm; and a processor configured to estimate illumination information of the images by inputting the images of at least four channels to a deep learning network trained in advance, and convert colors of the acquired images using the estimated illumination information.

Image acquisition apparatus for estimating illumination information by inputting multispectral images to a deep learning network and electronic apparatus including the same

An electronic device may include: a first housing; a second housing; a hinge structure; a display; and a sensor panel, wherein the sensor panel comprises: a support layer which comprises a polymer inclusive material and is in contact with an adhesive material arranged on at least one of a first surface of the first housing and a third surface of the second housing; a shielding layer arranged on the support layer; a first insulating layer arranged on the shielding layer; a first conductive pattern arranged on the first insulating layer; a second insulating layer arranged on the first conductive pattern; a second conductive pattern arranged on the second insulating layer; and a third insulating layer arranged on the second conductive pattern and facing one surface of the display, wherein the thickness of at least one of the first insulating layer and the third insulating layer is greater than the thickness of the second insulating layer.

Electronic device comprising sensor panel

A semiconductor device includes an electrode structure including electrodes stacked on a substrate and an insulating pattern on an uppermost electrode of the electrodes, a vertical structure that penetrates the electrode structure and is connected to the substrate, a first insulating layer on the electrode and the vertical structure, a conductive pattern that penetrates the first insulating layer and is connected to the vertical structure, an upper horizontal electrode on the conductive pattern, and an upper semiconductor pattern that penetrates the upper horizontal electrode and is connected to the conductive pattern. The conductive pattern has a first side surface on the vertical structure and a second side surface on the insulating pattern.

Semiconductor device including separate upper channel structures and electronic system including the same

An electronic device includes: a flexible display; an input module disposed between a surface formed by a first housing and a second housing supporting the flexible display and the flexible display, and including a first pattern layer and a second pattern layer; and waterproof adhesives disposed on each of the first housing and the second housing, wherein the first pattern layer is disposed on a surface of the input module facing the waterproof adhesives, and includes first signal patterns and first dummy patterns disposed in an area corresponding to the waterproof adhesive, and wherein the second pattern layer is disposed on the other side of the input module facing the flexible display.

Electronic device including display

A semiconductor device includes a first substrate structure including a first decoder circuit region, a second decoder circuit region, and a page buffer circuit region, and a second substrate structure connected to the first substrate structure. The second substrate structure includes a first cell structure that includes first horizontally extending gate electrodes, and a second cell structure that includes second horizontally extending gate electrodes. The second cell structure is disposed below the first cell structure. A first stair structure is disposed to one side of the first and second cell structures, and a second stair structure is disposed to a second side opposite the first side. a dummy structure is disposed below the first stair structure. First contact plugs pass through the first stair structure and the first dummy structure and are respectively connected to the first gate electrodes, and second contact plugs pass through the second stair structure and are respectively connected to the second gate electrodes.

Semiconductor device and data storage system including semiconductor device

A side surface inspection device is provided for a cylindrical battery having a side surface defining first to fourth areas. The side surface inspection device includes a first light to emit light toward the side surface of the cylindrical battery; a plurality of mirrors having a first to fourth mirrors that each reflect light emitted from the first light to be incident on each of the first to fourth areas, respectively, of the cylindrical battery, and are configured to reflect light reflected by each of the first to fourth areas, respectively, of the cylindrical battery; and a camera to receive the light reflected by each of the plurality of mirrors and configured to form an image including images of the first to fourth areas of the cylindrical battery.

Side surface inspection device of cylindrical battery

A semiconductor device including a cell area including a first substrate, gate electrodes on the first substrate, a channel structure extending through the gate electrodes, cell contact plugs, a through contact plug, and first bonding pads, the first peripheral circuit area including second bonding pads on the first bonding pads; a second peripheral circuit area connected to the first peripheral circuit area; and a second substrate between the first peripheral circuit area and the second peripheral circuit area, the second substrate including a first surface in the first peripheral circuit area and a second surface in the second peripheral circuit area, wherein the second peripheral circuit area includes a device on the second surface, and a through electrode extending vertically through the second substrate and connected to the first peripheral circuit area.

Semiconductor device having peripheral circuit areas at both sides of substrate and data storage system including the same

A semiconductor device and a data storage system including the same, the semiconductor device including: a first structure including a peripheral circuit; and a second structure, including: a pattern structure; an upper insulating layer; a stack structure between the first structure and the pattern structure and including first and second stack portions spaced apart from each other, the first and second stack portions respectively including horizontal conductive layers and interlayer insulating layers alternately stacked; separation structures penetrating through the stack structure; memory vertical structures penetrating through the first stack portion; and a contact structure penetrating through the second stack portion, the pattern structure, and the upper insulating layer, wherein the contact structure includes a lower contact plug penetrating through at least the second stack portion and an upper contact plug contacting the lower contact plug and extending upwardly to penetrate through the pattern structure and the upper insulating layer.

Semiconductor device and data storage system including the same

A semiconductor device includes a stack structure, first separation patterns passing through the stack structure, a second separation pattern passing through at least a portion of the stack structure between the first separation patterns, and a cutting channel structure passing through the stack structure and having an end portion partially cut by the second separation pattern. A channel layer of the cutting channel structure has a ring shape cut by the second separation pattern to have end portions of the channel layer which are spaced apart from each other.

Semiconductor devices and data storage systems including the same

Disclosed are a three-dimensional semiconductor memory device and an electronic system including the same. The device includes a substrate, a cell array structure provided on the substrate to include a plurality of stacked electrodes spaced apart from each other, an uppermost one of the electrodes being a first string selection line, a vertical channel structure provided to penetrate the cell array structure and connected to the substrate, a conductive pad provided in an upper portion of the vertical channel structure, a bit line on the cell array structure, a bit line contact electrically connecting the bit line to the conductive pad, and a cutting structure penetrating the first string selection line. The cutting structure penetrates a portion of the conductive pad. A bottom surface of the bit line contact includes first and second bottom surfaces in contact with the conductive pad and the cutting structure, respectively.

Semiconductor device and electronic system including the same

A method of performing autonomous driving based on platooning by a moving object includes setting a moving path, determining whether platooning is allowed, transmitting moving path information to a first intelligent transportation system infrastructure when the moving object of a plurality of moving objects approaches a preset range of the first intelligent transportation system infrastructure, receiving platooning information from the first intelligent transportation system infrastructure, and performing platooning based on the platooning information, wherein the first intelligent transportation system infrastructure groups ones of the moving objects capable of platooning from among the plurality of moving objects based on the moving path information received from each of the plurality of moving objects.

Method and apparatus for performing platooning of the moving object

An electronic device is provided. The electronic device includes a camera, a flexible display having a display region with a changeable size, and a processor configured to display an image obtained via the camera in a first region of the display region, display at least a part of control objects related to the camera in a second region different from the first region, in case that reduction of the display region is detected, compare a size of the reduced display region to a size of the image, and display the image in the reduced display region while maintaining an aspect ratio and the size of the image such that at least a part of the control objects related to the camera overlaps the image displayed in the reduced display region.

Electronic device including flexible display and operating method thereof

A semiconductor memory device includes: a semiconductor substrate having a first surface and a second surface opposing each other; a back-side insulating layer below the second surface of the semiconductor substrate; an external input/output conductive pattern below the back-side insulating layer; a circuit device including a gate electrode and a source/drain region, on the first surface of the semiconductor substrate; an internal input/output conductive pattern on the first surface of the semiconductor substrate, the internal input/output conductive pattern having at least a portion disposed on the same level as at least a portion of the gate electrode; a through-electrode structure penetrating through the semiconductor substrate and the back-side insulating layer and electrically connected to the internal input/output conductive pattern and the external input/output conductive pattern; and a memory cell array region disposed on a level higher than the circuit device, on the first surface of the semiconductor substrate.

Growing community of inventors

Seoul, South Korea

Jiwon Kim