Micron Technology Incorporated

Aptina Imaging Corporation

Round Rock Research, LLC

Jiutao Li

Allen McTeer

Jin Li

John T Moore

Kristy A Campbell

Ulrich C Boettiger

Trung Tri Doan

Gregory C Herdt

Terry L Gilton

Li Li

Shuang Meng

Loriston Ford

Keith Hampton

Yongjun Jeff Hu

Richard A Mauritzson

Shane P Leiphart

Ralph E Kauffman

Qi Pan

A method of sputter depositing silver selenide and controlling the stoichiometry and nodular defect formations of a sputter deposited silver-selenide film. The method includes depositing silver-selenide using a sputter deposition process at a pressure of about 0.3 mTorr to about 10 mTorr. In accordance with one aspect of the invention, an RF sputter deposition process may be used preferably at pressures of about 2 mTorr to about 3 mTorr. In accordance with another aspect of the invention, a pulse DC sputter deposition process may be used preferably at pressures of about 4 mTorr to about 5 mTorr.

Forming a memory device using sputtering to deposit silver-selenide film

Method and apparatus for sputter depositing silver selenide and controlling defect formation in and on a sputter deposited silver selenide film are provided. A method of forming deposited silver selenide comprising both alpha and beta phases is further provided. The methods include depositing silver selenide using sputter powers of less than about 200 W, using sputter power densities of less than about 1 W/cm, using sputter pressures of less than about 40 mTorr and preferably less than about 10 mTorr, using sputter gasses with molecular weight greater than that of neon, using cooling apparatus having a coolant flow rate at least greater than 2.5 gallons per minute and a coolant temperature less than about 25&#xb0; C., using a magnetron sputtering system having a magnetron placed a sufficient distance from a silver selenide sputter target so as to maintain a sputter target temperature of less than about 350&#xb0; C. and preferably below about 250&#xb0; C. during sputter deposition, and heating the sputter deposition substrate to greater than about 30&#xb0; C.

Silver selenide sputtered films and method and apparatus for controlling defect formation in silver selenide sputtered films

A transition metal oxide dielectric material is doped with a non-metal in order to enhance the electrical properties of the metal oxide. In a preferred embodiment, a transition metal oxide is deposited over a bottom electrode and implanted with a dopant. In a preferred embodiment, the metal oxide is hafnium oxide or zirconium oxide and the dopant is nitrogen. The dopant can convert the crystal structure of the hafnium oxide or zirconium oxide to a tetragonal structure and increase the dielectric constant of the metal oxide.

High dielectric constant transition metal oxide materials

A photon collector has a reflecting metal layer to increase photon collection efficiency in a solid state imaging sensor. The reflecting metal layer reflects incident light internally to a photosensor. A plurality of photon collectors is formed in a wafer substrate over an array of photosensors. The photon collector is formed in an opening in an insulating layer provided over each photosensor.

Method of fabricating an imaging device for collecting photons

The invention is related to methods and apparatus for providing a resistance variable memory element with improved data retention and switching characteristics. According to one embodiment of the invention, a resistance variable memory element is provided having at least one silver-selenide layer in between two glass layers, wherein at least one of the glass layers is a chalcogenide glass, preferably having a GeSecomposition. According to another embodiment of the invention, a resistance variable memory element is provided having at least one silver-selenide layer in between chalcogenide glass layers and further having a silver layer above at least one of said chalcogenide glass layers and a conductive adhesion layer above said silver layer. According to the another embodiment of the invention, a resistance variable memory element is provided having a first chalcogenide glass layer, a silver layer over said chalcogenide glass layer, a second chalcogenide glass layer over said silver layer, a second silver layer over said second chalcogenide glass layer, and a conductive adhesion layer over said a second silver layer.

Layered resistance variable memory device and method of fabrication

A transient index stack having an intermediate transient index layer, for use in an imaging device or a display device, that reduces reflection between layers having different refractive indexes by making a gradual transition from one refractive index to another. Other embodiments include a pixel array in an imaging or display device, an imager system having improved optical characteristics for reception of light by photosensors and a display system having improved optical characteristics for transmission of light by photoemitters. Enhanced reception of light is achieved by reducing reflection between a photolayer, for example, a photosensor or photoemitter, and surrounding media by introducing an intermediate layer with a transient refractive index between the photolayer and surrounding media such that more photons reach the photolayer. The surrounding media can include a protective layer of optically transparent media.

Method and apparatus providing refractive index structure for a device capturing or displaying images

The present invention is related to methods and apparatus that allow a chalcogenide glass such as germanium selenide (GeSe) to be doped with a metal such as silver, copper, or zinc without utilizing an ultraviolet (UV) photodoping step to dope the chalcogenide glass with the metal. The chalcogenide glass doped with the metal can be used to store data in a memory device. Advantageously, the systems and methods co-sputter the metal and the chalcogenide glass and allow for relatively precise and efficient control of a constituent ratio between the doping metal and the chalcogenide glass. Further advantageously, the systems and methods enable the doping of the chalcogenide glass with a relatively high degree of uniformity over the depth of the formed layer of chalcogenide glass and the metal. Also, the systems and methods allow a metal concentration to be varied in a controlled manner along the thin film depth.

Co-sputter deposition of metal-doped chalcogenides

A method of forming a non-volatile resistance variable device includes forming a first conductive electrode material on a substrate. A metal doped chalcogenide comprising material is formed over the first conductive electrode material. Such comprises the metal and AB, where 'B' is selected from S, Se and Te and mixtures thereof, and where 'A' comprises at least one element which is selected from Group 13, Group 14, Group 15, or Group 17 of the periodic table. In one aspect, the chalcogenide comprising material is exposed to and HNOsolution. In one aspect the outer surface is oxidized effective to form a layer comprising at least one of an oxide of &#x201c;A&#x201d; or an oxide of &#x201c;B&#x201d;. In one aspect, a passivating material is formed over the metal doped chalcogenide comprising material. A second conductive electrode material is deposited, and a second conductive electrode material of the device is ultimately formed therefrom.

Resistance variable memory devices with passivating material

An improved imaging device having a pixel arrangement featuring a multilayer light shield. The multilayer light shield includes stacked layers of light-shielding and light-transparent material. The light-transparent material, such as a dielectric, is selected to have a stress, such as a tensile stress, that offsets the stress, such as a compressive stress, of the light shielding material. Without the stress offset, the high compressive stress of the refractory metal could damage the integrity of the nearby silicon. The refractory metal is capable of withstanding the high temperatures associated with front end CMOS processing. The laminate structure allows the light shield to be placed close to the pixel surface. The light-transparent material has a thickness equal to about one-quarter wavelength of the light to be blocked, to act as an anti-reflective coating. An aperture in the light shield exposes the active region of the pixel's photoconversion device.

CMOS front end process compatible low stress light shield

A microlens has a surface with an effective index of refraction close to the index of air to reduce reflection caused by change in indices of refraction from microlens to air. The microlens having an index of refraction approximately the same as that of air is obtained by providing a rough or bumpy lens-air surface on the microlens. Features protrude from the surface of a microlens to create the rough surface and preferably have a length of greater or equal to a wavelength of light and a width of less than a sub-wavelength of light, from about 1/10 to &#xbc; of the wavelength of light. The features may be of any suitable shape, including but not limited to triangular, cylindrical, rectangular, trapezoidal, or spherical and may be formed by a variety of suitable processes, including but not limited to mask and etching, lithography, spray-on beads, sputtering, and growing.

Method and apparatus for reducing microlens surface reflection

A CMOS imager having reduced dark current and methods of forming the same. A nitrided gate oxide layer having approximately twice the thickness of a typical nitrided gate oxide is provided over the photosensor region of a CMOS imager. The gate oxide layer provides an improved contaminant barrier to protect the photosensor, contains the p+ implant distribution in the surface of the p+ pinned region of the photosensor, and reduces photon reflection at the photosensor surface, thereby decreasing dark current.

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Boise, ID, United States of America

Jiutao Li