Boe Technology Group Co., Ltd.

Beijing Boe Technology Development Co., Ltd.

Beijing Shiyan Technology Co., Ltd.

Jiushi Wang

Zhanfeng Cao

Qingzhao Liu

Xue Dong

Qi Yao

Feng Zhang

Kuanjun Peng

Guoqiang Wang

Lei Chen

Ce Ning

Lei Zhao

Yanan Niu

Feng Guan

Fangzhen Zhang

Jing Feng

Wusheng Li

Shuilang Dong

Changfeng Li

Wei Sun

Zhongyuan Wu

Shi Shu

Ke Fei Wang

Qi Qi

Rui Liu

Zhijun Lv

Tieshi Wang

Minglei Chu

Zhengliang Li

Jiankang Sun

Libo Wang

Hongwei Tian

Zhiqiang Jiao

Xiaolong He

Xinhong Lu

Jing Yu

Dini Xie

Tingting Zhou

Hongrun Wang

Xiaoyan Zhu

Lizhen Zhang

Yongfeng Zhang

Da Lu

Shunyu Yao

Wei Zhang

Guangcai Yuan

Bin Zhang

Fuqiang Li

Chuanxiang Xu

Zhiwei Liang

Chao Liu

Hehe Hu

Kun Zhao

Fengjuan Liu

Yichi Zhang

Jincheng Gao

Tianmin Zhou

Nianqi Yao

Jie Huang

Jintao Peng

Jiayu He

Zhaohui Qiang

Seung Jin Choi

Dongsheng Yin

Liuqing Li

Jingshang Zhou

Zhongpeng Tian

Dalin Cui

Fugiang Li

An array substrate and a display device are provided. The array substrate includes: a substrate, sub-pixel units, first signal lines, and second signal lines; multiple first signal lines and multiple second signal lines intersect to define the opening areas of the sub-pixel units; each second signal line includes: multiple first parts extending along the column direction, and multiple second parts; the second part includes a portion extending along the inclination direction, and the second part connects two first parts; the angle between the inclination direction and the column direction or row direction is greater than 0; each first part is adjacent to the opening area of the sub-pixel units in the row direction, and multiple second parts respectively pass through at least of the areas between adjacent two pixel repeating unit rows, with the distance between the two first parts being greater than 0 in the row direction.

Display panel and display device

A display panel and a display device are provided. The display panel includes sub-pixels, data lines and gate lines. The sub-pixels include pixel circuits connected to the data lines and the gate lines. The display panel includes display subregions and selection signal line groups in one-to-one correspondence, each display subregion includes at least two sub-pixels, each selection signal line group includes selection signal lines, and the selection signal lines corresponding to different display subregions are insulated from each other; the pixel circuit includes a transistor in which an active semiconductor layer includes a first part and a second part, the first part overlaps with the gate line electrically connected with the transistor, and the second part overlaps with at least one selection signal line, and the gate line and the selection signal line are both configured to turn on the transistor upon being input with a turn-on voltage.

Disclosed are a display panel and a displaying device. The display panel includes a plurality of first-color subpixels, and each first-color subpixel includes a base, the base including a first driving electrode and a second driving electrode; at least one first electrode, disposed at a side of the base and is connected to the first driving electrode; at least one second electrode, disposed at a same side of the base with the first electrode and is connected to the second driving electrode; an intermediate layer, disposed between the first electrode and the second electrode; wherein the first electrode and the second electrode divide the first-color subpixel into a plurality of secondary pixels, the first electrode and the second electrode are insulated with each other via the intermediate layer, and are respectively connected to the first driving electrode and the second driving electrode, and control the secondary pixels independently.

Preparation method of display panel, display panel and displaying device

A driving substrate, a light-emitting apparatus and a manufacturing method thereof, a splicing display apparatus, the driving substrate includes: a device disposing area, a bending area and a bonding area, the bending area is located between the device disposing area and the bonding area; the driving substrates located in the device disposing area, the bending area, and the bonding area include a buffer layer, a first conductive layer and a flexible dielectric layer that are stacked in sequence; the driving substrates located in the device disposing area and the bonding area further include a base plate disposed at a side of the buffer layer away from the first conductive layer, and a second conductive layer disposed at a side of the flexible dielectric layer away from the first conductive layer; and the driving substrate located in the bending area is configured to be able to bend along a bending axis.

Driving substrate, light-emitting apparatus and manufacturing method thereof, and splicing display apparatus each having driving substrate in bending area

The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the channel layer include tin, and at least one of indium, gallium and zinc. The first protection layer includes praseodymium used to absorb photo-generated electrons from at least one of the channel layer and the first protection layer which is under light irradiation and reduce a photo-generated current caused by the light irradiation.

Thin film transistor and method for manufacturing the same, array substrate and display device

Disclosed are a preparation method of a display panel, a display panel and a displaying device. The display panel comprises a plurality of first-color subpixels, and each first-color subpixel comprises a base, the base comprising a first driving electrode and a second driving electrode; a flat layer disposed on the side, near the first driving electrode and the second driving electrode, of the base; a patterned passivation layer and at least one first electrode disposed on the side, away from the base, of the flat layer, the first electrode being connected with the first driving electrode through via holes penetrating the flat layer; and at least one second electrode disposed on the side, away from the base, of the passivation layer, the second electrode being connected with the second driving electrode through via holes penetrating the passivation layer and the flat layer.

The present disclosure provides a driving substrate including: a flexible substrate base, a plurality of thin film transistors on the flexible substrate base and a first conductive pattern layer on a side of the thin film transistors distal to the flexible substrate base. The first conductive pattern layer includes: a plurality of first connection terminals in the display region and a plurality of signal supply lines in the bendable region. A first number of first connection terminals are electrically coupled to first electrodes of the plurality of thin film transistors. The plurality of signal supply lines are coupled to a second number of first connection terminals other than the first number of first connection terminals. At least one inorganic insulating layer including a hollowed-out pattern in the bendable region is between the first conductive pattern layer and the flexible substrate base.

Driving substrate and manufacturing method thereof and display device

A PIN device includes: a first doped layer, a second doped layer, and an intrinsic layer between the first doped layer and the second doped layer, where the second doped layer includes a body portion and an electric field isolating portion at least partially enclosing the body portion; and the electric field isolating portion is doped differently from the body portion.

Pin device and manufacturing method thereof, photosensitive device and display device

A light-emitting unit and a method for manufacturing the same are provided. The light-emitting unit includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer that are distributed in a stacking manner. At least one of the first semiconductor layer or the second semiconductor layer is at least in contact with a part of layer surfaces and a part of side of the light-emitting layer, the first semiconductor layer is insulated from the second semiconductor layer, and one of the first semiconductor layer and the second semiconductor layer is an N-type semiconductor layer, and the other is a P-type semiconductor layer. The present disclosure is conducive to increasing the light-emitting area and the light extraction efficiency of the light-emitting unit.

Light-emitting unit and method for manufacturing the same

The present disclosure provides a polarizing device and a method for preparing the same, a display substrate, and a display device. The polarizing device includes: a base substrate, a metal wire grid, and an anti-reflection layer, in which the metal wire grid is arranged on the base substrate, the anti-reflection layer is arranged on the surface of the metal wire grid away from the base substrate, and the anti-reflection layer is a carbon film layer.

Polarizing device and method for preparing the same, display substrate and display device

The present disclosure provides a display substrate and a manufacturing method thereof, and a display device. In the display substrate of the present disclosure, a first transistor comprises a first gate electrode, a first electrode, a second electrode, and a first active layer; and a second transistor comprises a second gate electrode, a third electrode, a fourth electrode, and a second active layers, wherein the first active layer comprises a silicon material, the second active layer comprises an oxide semiconductor material, and wherein the third electrode and the first gate electrode are disposed in the same layer, and the fourth electrode and the first electrode, the second electrodes are disposed in the same layer.

Display substrate and manufacturing method thereof, display device

A display substrate is provided. The display substrate includes a substrate (), a first transistor () and a second transistor () on the substrate (), directions of intrinsic threshold voltage shifts of the first transistor () and the second transistor () being opposite; and a shift adjustment structure () on the substrate (). The shift adjustment structure () may be configured to input adjustment signals to the first transistor () and the second transistor () respectively to make threshold voltages of the first transistor () and the second transistor () shift in directions opposite to the directions of their intrinsic threshold voltage shifts respectively.

Display substrate, adjustment method thereof, and display apparatus

In embodiments of the present disclosure, there is provided a display substrate assembly including: a base substrate; a light shielding layer on the base substrate; and an active layer of a thin film transistor, above the base substrate. An orthographic projection of the active layer on the base substrate in a thickness direction of the base substrate is within an orthographic projection of the light shielding layer on the base substrate in the thickness direction of the base substrate, and the light shielding layer includes an ion-doped amorphous silicon layer. In embodiments of the present disclosure, there is also provided a method of manufacturing a display substrate assembly and a display apparatus including the display substrate assembly.

Display having an amorphous silicon light shield below a thin film transistor

An array substrate includes a base substrate and a plurality of pixel units disposed on a base substrate, and at least one pixel unit includes a plurality of thin film transistors, a first electrode, and a second electrode. The plurality of thin film transistors include at least one first thin film transistor including a first active pattern, a first gate, a first source and a first drain. The first electrode is disposed in a same layer as the first active pattern, the first electrode is coupled to the first drain, and the second electrode is disposed in a same layer as the first gate. Orthographic projections of any two in a group consisting of the first electrode, the second electrode, and the first drain on the base substrate have an overlapping region.

Array substrate and manufacturing method therefor, and display device

The present disclosure provides a display backplane and a method for manufacturing the same, a display panel, and a display device. The display backplane includes: a substrate; a first thin film transistor located on one side of the substrate; and a second thin film transistor located on the one side of the substrate, wherein: the first thin film transistor comprises a first active layer, the second thin film transistor comprises a second active layer, wherein the first active layer and the second active layer are located in a same layer, and a material of the first active layer is different from that of the second active layer.

Display backplane and method for manufacturing the same, display panel and display device

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Beijing, China

Jiushi Wang