Taiwan Semiconductor Manufacturing Comp. Ltd.

Jiun-Yu Chen

Jiun-Lei Jerry Yu

Po-Chih Chen

Chun-Lin Tsai

Yun-Hsiang Wang

Chia-Hsun Wu

In some embodiments, the present disclosure relates to a semiconductor structure. The semiconductor structure includes a stacked semiconductor substrate having a semiconductor material disposed over a base semiconductor substrate. The base semiconductor substrate has a first coefficient of thermal expansion and the semiconductor material has a second coefficient of thermal expansion that is different than the first coefficient of thermal expansion. The stacked semiconductor substrate includes one or more sidewalls defining a crack stop ring trench that continuously extends in a closed path between a central region of the stacked semiconductor substrate and a peripheral region of the stacked semiconductor substrate surrounding the central region. The peripheral region of the stacked semiconductor substrate includes a plurality of cracks and the central region is substantially devoid of cracks.

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Hsinchu, Taiwan

Jiun-Yu Chen